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STB11N65M5

Public Made by Adom

by adom

STMicroelectronics MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs stb11n65m5: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
viewers stb11n65m5: viewers · Ray 21d ago
package.json stb11n65m5: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
page.json stb11n65m5: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
README.md stb11n65m5: specified limits as data (metadata.characteristics, 20 rows from the datasheet) · Ray 17d ago
stb11n65m5-etched.glb stb11n65m5: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
stb11n65m5-etched.step stb11n65m5: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
stb11n65m5-hero.glb stb11n65m5: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
stb11n65m5-hero.overlay.json stb11n65m5: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
stb11n65m5.glb Publish 0.1.0 · Ray 21d ago
stb11n65m5.kicad_mod Publish 0.1.0 · Ray 21d ago
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stb11n65m5.step Publish 0.1.0 · Ray 21d ago

STB11N65M5

STMicroelectronics · MOSFETs · D2PAK

STB11N65M5 from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is limited to ±25 V (Table 1), with gate threshold VGS(th) of 3 to 5 V at ID = 250 µA (Table 4).
2 D passive Drain terminal, electrically connected to the TAB; drain-source breakdown V(BR)DSS is 650 V minimum and continuous drain current is 9 A at TC = 25 °C (Tables 1 and 4).
3 S passive Source terminal; source-drain diode forward voltage VSD is 1.5 V maximum at ISD = 9 A, VGS = 0 V (Table 7).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package D2PAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-source voltage VGS -25 25 V 2
Drain current (continuous) ID 9 A TC = 25 °C 2
Drain current (continuous) ID 5.6 A TC = 100 °C 2
Drain current (pulsed) IDM 36 A Pulse width limited by safe operating area 2
Total power dissipation PTOT 85 W TC = 25 °C 2
Peak diode recovery voltage slope dv/dt 15 V/ns ISD ≤ 9 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V 2
Operating junction temperature range TJ -55 150 °C 2
Avalanche current, repetitive or not-repetitive IAR 2 A Pulse width limited by TJ max. 2
Single pulse avalanche energy EAS 130 mJ Starting Tj = 25 °C, ID = IAR, VDD = 50 V 2
Thermal resistance, junction-to-case RthJC 1.47 °C/W D2PAK 2
Thermal resistance, junction-to-ambient RthJA 30 °C/W Mounted on a standard 1 inch² area of FR-4 PCB with 2-oz copper (D2PAK) 2
Drain-source breakdown voltage V(BR)DSS 650 V ID = 1 mA, VGS = 0 V 3
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 650 V 3
Zero gate voltage drain current IDSS 100 µA VGS = 0 V, VDS = 650 V, TC = 125 °C (specified by design, not tested in production) 3
Gate body leakage current IGSS -100 100 nA VDS = 0 V, VGS = ±25 V 3
Gate threshold voltage VGS(th) 3 4 5 V VDS = VGS, ID = 250 µA 3
Static drain-source on resistance RDS(on) 430 480 mΩ VGS = 10 V, ID = 4.5 A 3
Source-drain current ISD 9 A 4
Source-drain current (pulsed) ISDM 36 A Pulse width limited by safe operating area 4
Forward on voltage VSD 1.5 V ISD = 9 A, VGS = 0 V 4

CAD (KiCad official)

  • Symbol: STB11N65M5
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: stb11n65m5-etched.step / stb11n65m5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stb11n65m5.step / stb11n65m5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (29 pp, sha256 969b562ca35a0d73, retrieved 2026-10-12, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF