STB11N65M5

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  "slug": "stb11n65m5",
  "title": "STB11N65M5",
  "brief": "STMicroelectronics MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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  "component": {
    "mpn": "STB11N65M5",
    "manufacturer": "STMicroelectronics",
    "package": "D2PAK",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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    "distributor_links": {
      "lcsc": "C5199068",
      "digikey": "497-13144-2-ND",
      "mouser": "511-STB11N65M5"
    },
    "distributor_check": {
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      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "497-13144-2-ND",
        "status": "found",
        "lifecycle": "Active"
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        "pn": "511-STB11N65M5",
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    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate terminal; gate-source voltage is limited to ±25 V (Table 1), with gate threshold VGS(th) of 3 to 5 V at ID = 250 µA (Table 4)."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal, electrically connected to the TAB; drain-source breakdown V(BR)DSS is 650 V minimum and continuous drain current is 9 A at TC = 25 °C (Tables 1 and 4)."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal; source-drain diode forward voltage VSD is 1.5 V maximum at ISD = 9 A, VGS = 0 V (Table 7)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
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        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
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        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The pin assignment for the D2PAK comes from the symbol text on page 1 (D(2, TAB), G(1), S(3)) and th; The TAB is internally the drain (D(2, TAB)) and has no separate number, so it is noted in the drain "
        ],
        "pages_sent": 29,
        "cost_usd": 0.0557,
        "at": "2026-10-12T12:07:13"
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      "datasheet": {
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        "pages": 29,
        "sha256": "969b562ca35a0d73",
        "source_tier": "mfr"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
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      "footprint": "viewers/footprint.html"
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "804a3f76e4182a02567b2429bdc9a585b857158fb8543fccd29c8eb6780e1310",
        "checked": "2026-10-12",
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        "checked": "2026-10-16",
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  "metadata": {
    "specs": {
      "Manufacturer": "STMicroelectronics",
      "Package": "D2PAK",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "969b562ca35a0d73",
      "rows": [
        {
          "name": "Gate-source voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -25,
          "typ": null,
          "max": 25,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain current (continuous)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 9,
          "conditions": "TC = 25 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain current (continuous)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 5.6,
          "conditions": "TC = 100 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain current (pulsed)",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 36,
          "conditions": "Pulse width limited by safe operating area",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Total power dissipation",
          "symbol": "PTOT",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 85,
          "conditions": "TC = 25 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Peak diode recovery voltage slope",
          "symbol": "dv/dt",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 15,
          "conditions": "ISD ≤ 9 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Operating junction temperature range",
          "symbol": "TJ",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Avalanche current, repetitive or not-repetitive",
          "symbol": "IAR",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 2,
          "conditions": "Pulse width limited by TJ max.",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Single pulse avalanche energy",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 130,
          "conditions": "Starting Tj = 25 °C, ID = IAR, VDD = 50 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction-to-case",
          "symbol": "RthJC",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 1.47,
          "max": null,
          "conditions": "D2PAK",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction-to-ambient",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 30,
          "max": null,
          "conditions": "Mounted on a standard 1 inch² area of FR-4 PCB with 2-oz copper (D2PAK)",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 650,
          "typ": null,
          "max": null,
          "conditions": "ID = 1 mA, VGS = 0 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VGS = 0 V, VDS = 650 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "VGS = 0 V, VDS = 650 V, TC = 125 °C (specified by design, not tested in production)",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate body leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VDS = 0 V, VGS = ±25 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate threshold voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 3,
          "typ": 4,
          "max": 5,
          "conditions": "VDS = VGS, ID = 250 µA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Static drain-source on resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 430,
          "max": 480,
          "conditions": "VGS = 10 V, ID = 4.5 A",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Source-drain current",
          "symbol": "ISD",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 9,
          "conditions": "",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Source-drain current (pulsed)",
          "symbol": "ISDM",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 36,
          "conditions": "Pulse width limited by safe operating area",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Forward on voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1.5,
          "conditions": "ISD = 9 A, VGS = 0 V",
          "source_page": 4,
          "source": "datasheet"
        }
      ]
    }
  },
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  "discovery_pitch": "STB11N65M5 (STMicroelectronics) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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