component

SSM6N7002KFU

Public Made by Adom

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TOSHIBA MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SSM6N7002KFU

TOSHIBA · MOSFETs · SOT-363

SSM6N7002KFU from TOSHIBA, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source1 passive Source terminal of MOSFET 1; the device-level absolute maximum drain-source voltage is 60 V and DC drain current is 300 mA.
2 Gate1 input Gate terminal of MOSFET 1; the device-level absolute maximum gate-source voltage is ±20 V.
3 Drain2 passive Drain terminal of MOSFET 2; the device-level absolute maximum drain-source voltage is 60 V.
4 Source2 passive Source terminal of MOSFET 2; the device-level absolute maximum drain-source voltage is 60 V and DC drain current is 300 mA.
5 Gate2 input Gate terminal of MOSFET 2; the device-level absolute maximum gate-source voltage is ±20 V.
6 Drain1 passive Drain terminal of MOSFET 1; the device-level absolute maximum drain-source voltage is 60 V.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package SOT-363
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 60 V 2
Gate-source voltage VGSS -20 20 V 2
Drain current (DC) ID 300 mA Note 1, Note 2 2
Drain current (pulsed) IDP 1200 mA Note 1, Note 3 (pulse width ≤ 10 µs, Duty 1 %) 2
Power dissipation PD 500 mW Note 2, Note 4 (Tsp = 25 °C; total rating) 2
Power dissipation (mounted on board) PD 285 mW Note 4, Note 5 (25.4 × 25.4 × 1.6 mm FR-4, Cu pad 645 mm²) 2
Channel temperature Tch 150 °C 2
Storage temperature Tstg -55 150 °C 2
Drain-source breakdown voltage V(BR)DSS 60 V ID = 250 µA, VGS = 0 V 3
Gate threshold voltage Vth 1.1 2.1 V ID = 250 µA, VDS = VGS 3
Drain-source on-resistance RDS(ON) 1.05 1.5 Ω ID = 100 mA, VGS = 10 V 3
Drain-source on-resistance RDS(ON) 1.15 1.65 Ω ID = 100 mA, VGS = 5.0 V 3
Drain-source on-resistance RDS(ON) 1.2 1.75 Ω ID = 100 mA, VGS = 4.5 V 3
Input capacitance Ciss 26 40 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 3
Total gate charge (gate-source plus gate-drain) Qg 0.39 0.6 nC VDD = 30 V, VGS = 4.5 V, ID = 200 mA 3
Diode forward voltage VDSF -0.79 -1.1 V ID = -115 mA, VGS = 0 V 4

CAD (KiCad official)

  • Symbol: SSM6N7002KFU
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: ssm6n7002kfu-etched.step / ssm6n7002kfu-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ssm6n7002kfu.step / ssm6n7002kfu.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (8 pp, sha256 8706b0b83257526b, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF