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Ray Set visibility: public add0ca4 13d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "ssm6n7002kfu",
  "title": "SSM6N7002KFU",
  "brief": "TOSHIBA MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
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    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/a08658438315f67dc6e582c1fabcedba.pdf",
    "parts": {
      "symbol": "ssm6n7002kfu.kicad_sym",
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      "lbr": "ssm6n7002kfu.lbr"
    },
    "distributor_links": {
      "lcsc": "C6916295"
    },
    "distributor_check": {
      "checked_at": "2026-10-21T07:47:29Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "Source1",
        "type": "passive",
        "description": "Source terminal of MOSFET 1; the device-level absolute maximum drain-source voltage is 60 V and DC drain current is 300 mA."
      },
      {
        "number": "2",
        "name": "Gate1",
        "type": "input",
        "description": "Gate terminal of MOSFET 1; the device-level absolute maximum gate-source voltage is ±20 V."
      },
      {
        "number": "3",
        "name": "Drain2",
        "type": "passive",
        "description": "Drain terminal of MOSFET 2; the device-level absolute maximum drain-source voltage is 60 V."
      },
      {
        "number": "4",
        "name": "Source2",
        "type": "passive",
        "description": "Source terminal of MOSFET 2; the device-level absolute maximum drain-source voltage is 60 V and DC drain current is 300 mA."
      },
      {
        "number": "5",
        "name": "Gate2",
        "type": "input",
        "description": "Gate terminal of MOSFET 2; the device-level absolute maximum gate-source voltage is ±20 V."
      },
      {
        "number": "6",
        "name": "Drain1",
        "type": "passive",
        "description": "Drain terminal of MOSFET 1; the device-level absolute maximum drain-source voltage is 60 V."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
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        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: Pin types were assigned using KiCad conventions (source/drain as passive, gate as input); the datash; The datasheet gives no per-pin electrical limits. The descriptions cite device-level absolute maximu; Page 1 lists the pin assignments for the US6 package, the only package named in the datasheet. Page ",
          "2/6 pins cited to the wrong page (name found elsewhere): ['3:Drain2@p1', '4:Source2@p1']",
          "1/6 pin names appear NOWHERE in the datasheet text: ['2:Gate1@p1']"
        ],
        "pages_sent": 8,
        "cost_usd": 0.0361,
        "at": "2026-10-21T07:42:05"
      },
      "datasheet": {
        "url": "https://datasheet.lcsc.com/datasheet/pdf/a08658438315f67dc6e582c1fabcedba.pdf",
        "pages": 8,
        "sha256": "8706b0b83257526b",
        "source_tier": "mfr"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 6,
        "described": 6,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
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      "footprint": "viewers/footprint.html"
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        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "045cc95e18ee7a13d1623c3ce6604fc833049bdb4f952f68c26e3c5767d122e4",
        "checked": "2026-10-21",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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        "sha256": "afb3f8e5cde5e37c2da96539d2a95e12bfb933c1310c57387aa35adcdcf1adb3",
        "checked": "2026-10-21",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "TOSHIBA",
      "Package": "SOT-363",
      "Category": "Triode/MOS Tube/Transistor",
      "Pins": "6"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "8706b0b83257526b359db00072519b9c2cf18c7185ec93b5ed1ec82608fe8047",
      "rows": [
        {
          "name": "Drain-source voltage",
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          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 60,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-source voltage",
          "symbol": "VGSS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain current (DC)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "mA",
          "min": null,
          "typ": null,
          "max": 300,
          "conditions": "Note 1, Note 2",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain current (pulsed)",
          "symbol": "IDP",
          "kind": "absolute_maximum",
          "unit": "mA",
          "min": null,
          "typ": null,
          "max": 1200,
          "conditions": "Note 1, Note 3 (pulse width ≤ 10 µs, Duty 1 %)",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Power dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "mW",
          "min": null,
          "typ": null,
          "max": 500,
          "conditions": "Note 2, Note 4 (Tsp = 25 °C; total rating)",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Power dissipation (mounted on board)",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "mW",
          "min": null,
          "typ": null,
          "max": 285,
          "conditions": "Note 4, Note 5 (25.4 × 25.4 × 1.6 mm FR-4, Cu pad 645 mm²)",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Channel temperature",
          "symbol": "Tch",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": null,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Storage temperature",
          "symbol": "Tstg",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 60,
          "typ": null,
          "max": null,
          "conditions": "ID = 250 µA, VGS = 0 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate threshold voltage",
          "symbol": "Vth",
          "kind": "electrical",
          "unit": "V",
          "min": 1.1,
          "typ": null,
          "max": 2.1,
          "conditions": "ID = 250 µA, VDS = VGS",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Drain-source on-resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 1.05,
          "max": 1.5,
          "conditions": "ID = 100 mA, VGS = 10 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Drain-source on-resistance",
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          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 1.15,
          "max": 1.65,
          "conditions": "ID = 100 mA, VGS = 5.0 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Drain-source on-resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 1.2,
          "max": 1.75,
          "conditions": "ID = 100 mA, VGS = 4.5 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Input capacitance",
          "symbol": "Ciss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 26,
          "max": 40,
          "conditions": "VDS = 10 V, VGS = 0 V, f = 1 MHz",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Total gate charge (gate-source plus gate-drain)",
          "symbol": "Qg",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 0.39,
          "max": 0.6,
          "conditions": "VDD = 30 V, VGS = 4.5 V, ID = 200 mA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Diode forward voltage",
          "symbol": "VDSF",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": -0.79,
          "max": -1.1,
          "conditions": "ID = -115 mA, VGS = 0 V",
          "source_page": 4,
          "source": "datasheet"
        }
      ]
    }
  },
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  "discovery_pitch": "SSM6N7002KFU (TOSHIBA) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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