# SSM3K336R.LF

**TOSHIBA** · MOSFETs · SOT-23-3

SSM3K336R.LF from TOSHIBA, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET; absolute maximum gate-source voltage is ±20 V, and the gate threshold voltage Vth is 1.3 V min to 2.5 V max (VDS = 10 V, ID = 0.1 mA). |
| 2 | Source | passive | Source of the N-channel MOSFET, the reference terminal for the ±20 V gate-source rating; the body diode forward voltage is -0.89 V typ (-1.2 V max) at ID = -3.0 A, VGS = 0 V. |
| 3 | Drain | passive | Drain of the N-channel MOSFET; drain-source voltage is rated 30 V, DC drain current 3 A, and pulsed drain current 8 A (PW ≤ 10 ms, duty ≤ 1%). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS |  |  | 30 | V |  | 2 |
| Gate-source voltage | VGSS | -20 |  | 20 | V |  | 2 |
| Drain current (DC) | ID |  |  | 3 | A |  | 2 |
| Drain current (pulsed) | IDP |  |  | 8 | A | PW <= 10 ms, duty <= 1% | 2 |
| Power dissipation | PD |  |  | 1 | W | t <= 10 s | 2 |
| Power dissipation | PD |  |  | 2 | W | Note 3: FR4 board 25.4 mm x 25.4 mm x 1.6 mm, Cu pad 645 mm2 | 2 |
| Channel temperature | Tch |  |  | 150 | °C |  | 2 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 2 |
| Gate leakage current | IGSS | -10 |  | 10 | µA | VGS = ±20 V, VDS = 0 V | 3 |
| Drain cut-off current | IDSS |  |  | 1 | µA | VDS = 30 V, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 30 |  |  | V | ID = 10 mA, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSX | 15 |  |  | V | ID = 10 mA, VGS = -20 V | 3 |
| Gate threshold voltage | Vth | 1.3 |  | 2.5 | V | VDS = 10 V, ID = 0.1 mA | 3 |
| Drain-source on-resistance | RDS(ON) |  | 67 | 95 | mΩ | ID = 2.0 A, VGS = 10 V | 3 |
| Drain-source on-resistance | RDS(ON) |  | 100 | 140 | mΩ | ID = 1.0 A, VGS = 4.5 V | 3 |
| Forward transfer admittance | /Yfs/ | 2.5 | 5 |  | S | VDS = 10 V, ID = 1.0 A | 3 |
| Diode forward voltage | VDSF |  | -0.89 | -1.2 | V | ID = -3.0 A, VGS = 0 V | 4 |

## CAD (KiCad official)

- Symbol: `SSM3K336R.LF`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `ssm3k336r-lf-etched.step` / `ssm3k336r-lf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ssm3k336r-lf.step` / `ssm3k336r-lf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588904157663137792) (9 pp, sha256 `d0b8bbbd401f4a43`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ssm3k336r-lf-datasheet.pdf)