component
SSM3K336R.LF
Public Made by Adomby adom
TOSHIBA MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
ssm3k336r-lf: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
2 files changed
+236−1
README.md+24@@ -21,6 +21,30 @@ SSM3K336R.LF from TOSHIBA, in a SOT-23-3. Pinout and pin descriptions extracted | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDSS | | | 30 | V | | 2 |+| Gate-source voltage | VGSS | -20 | | 20 | V | | 2 |+| Drain current (DC) | ID | | | 3 | A | | 2 |+| Drain current (pulsed) | IDP | | | 8 | A | PW <= 10 ms, duty <= 1% | 2 |+| Power dissipation | PD | | | 1 | W | t <= 10 s | 2 |+| Power dissipation | PD | | | 2 | W | Note 3: FR4 board 25.4 mm x 25.4 mm x 1.6 mm, Cu pad 645 mm2 | 2 |+| Channel temperature | Tch | | | 150 | °C | | 2 |+| Storage temperature | Tstg | -55 | | 150 | °C | | 2 |+| Gate leakage current | IGSS | -10 | | 10 | µA | VGS = ±20 V, VDS = 0 V | 3 |+| Drain cut-off current | IDSS | | | 1 | µA | VDS = 30 V, VGS = 0 V | 3 |+| Drain-source breakdown voltage | V(BR)DSS | 30 | | | V | ID = 10 mA, VGS = 0 V | 3 |+| Drain-source breakdown voltage | V(BR)DSX | 15 | | | V | ID = 10 mA, VGS = -20 V | 3 |+| Gate threshold voltage | Vth | 1.3 | | 2.5 | V | VDS = 10 V, ID = 0.1 mA | 3 |+| Drain-source on-resistance | RDS(ON) | | 67 | 95 | mΩ | ID = 2.0 A, VGS = 10 V | 3 |+| Drain-source on-resistance | RDS(ON) | | 100 | 140 | mΩ | ID = 1.0 A, VGS = 4.5 V | 3 |+| Forward transfer admittance | /Yfs/ | 2.5 | 5 | | S | VDS = 10 V, ID = 1.0 A | 3 |+| Diode forward voltage | VDSF | | -0.89 | -1.2 | V | ID = -3.0 A, VGS = 0 V | 4 |+ ## CAD (KiCad official) - Symbol: `SSM3K336R.LF`
page.json+212−1@@ -147,6 +147,217 @@ "Package": "SOT-23-3", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "d0b8bbbd401f4a43",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (DC)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDP",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "PW <= 10 ms, duty <= 1%",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "t <= 10 s",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "Note 3: FR4 board 25.4 mm x 25.4 mm x 1.6 mm, Cu pad 645 mm2",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Channel temperature",+ "symbol": "Tch",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "VGS = ±20 V, VDS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain cut-off current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 30 V, VGS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "ID = 10 mA, VGS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSX",+ "kind": "electrical",+ "unit": "V",+ "min": 15,+ "typ": null,+ "max": null,+ "conditions": "ID = 10 mA, VGS = -20 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "Vth",+ "kind": "electrical",+ "unit": "V",+ "min": 1.3,+ "typ": null,+ "max": 2.5,+ "conditions": "VDS = 10 V, ID = 0.1 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 67,+ "max": 95,+ "conditions": "ID = 2.0 A, VGS = 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 100,+ "max": 140,+ "conditions": "ID = 1.0 A, VGS = 4.5 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Forward transfer admittance",+ "symbol": "|Yfs|",+ "kind": "electrical",+ "unit": "S",+ "min": 2.5,+ "typ": 5,+ "max": null,+ "conditions": "VDS = 10 V, ID = 1.0 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VDSF",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.89,+ "max": -1.2,+ "conditions": "ID = -3.0 A, VGS = 0 V",+ "source_page": 4,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +399,4 @@ "visibility": { "public": true }-}+}