component
SSM3K336R.LF
Public Made by Adomby adom
TOSHIBA MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 29d ago |
| viewers | 29d ago |
| package.json | 29d ago |
| page.json | 23d ago |
| README.md | 23d ago |
| ssm3k336r-lf-etched.glb | 29d ago |
| ssm3k336r-lf-etched.step | 29d ago |
| ssm3k336r-lf-hero.glb | 29d ago |
| ssm3k336r-lf-hero.overlay.json | 29d ago |
| ssm3k336r-lf.glb | 29d ago |
| ssm3k336r-lf.kicad_mod | 29d ago |
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| ssm3k336r-lf.lbr | 29d ago |
| ssm3k336r-lf.step | 29d ago |
SSM3K336R.LF
TOSHIBA · MOSFETs · SOT-23-3
SSM3K336R.LF from TOSHIBA, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET; absolute maximum gate-source voltage is ±20 V, and the gate threshold voltage Vth is 1.3 V min to 2.5 V max (VDS = 10 V, ID = 0.1 mA). |
| 2 | Source | passive | Source of the N-channel MOSFET, the reference terminal for the ±20 V gate-source rating; the body diode forward voltage is -0.89 V typ (-1.2 V max) at ID = -3.0 A, VGS = 0 V. |
| 3 | Drain | passive | Drain of the N-channel MOSFET; drain-source voltage is rated 30 V, DC drain current 3 A, and pulsed drain current 8 A (PW ≤ 10 ms, duty ≤ 1%). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 30 | V | 2 | |||
| Gate-source voltage | VGSS | -20 | 20 | V | 2 | ||
| Drain current (DC) | ID | 3 | A | 2 | |||
| Drain current (pulsed) | IDP | 8 | A | PW <= 10 ms, duty <= 1% | 2 | ||
| Power dissipation | PD | 1 | W | t <= 10 s | 2 | ||
| Power dissipation | PD | 2 | W | Note 3: FR4 board 25.4 mm x 25.4 mm x 1.6 mm, Cu pad 645 mm2 | 2 | ||
| Channel temperature | Tch | 150 | °C | 2 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Gate leakage current | IGSS | -10 | 10 | µA | VGS = ±20 V, VDS = 0 V | 3 | |
| Drain cut-off current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 30 | V | ID = 10 mA, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSX | 15 | V | ID = 10 mA, VGS = -20 V | 3 | ||
| Gate threshold voltage | Vth | 1.3 | 2.5 | V | VDS = 10 V, ID = 0.1 mA | 3 | |
| Drain-source on-resistance | RDS(ON) | 67 | 95 | mΩ | ID = 2.0 A, VGS = 10 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 100 | 140 | mΩ | ID = 1.0 A, VGS = 4.5 V | 3 | |
| Forward transfer admittance | /Yfs/ | 2.5 | 5 | S | VDS = 10 V, ID = 1.0 A | 3 | |
| Diode forward voltage | VDSF | -0.89 | -1.2 | V | ID = -3.0 A, VGS = 0 V | 4 |
CAD (KiCad official)
- Symbol:
SSM3K336R.LF - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
ssm3k336r-lf-etched.step/ssm3k336r-lf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssm3k336r-lf.step/ssm3k336r-lf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (9 pp, sha256
d0b8bbbd401f4a43, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).