# SLF13N50A

**Maplesemi** · MOSFETs · TO-220F-3

SLF13N50A from Maplesemi, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum gate-source voltage of ±30 V and threshold of 2.0 to 4.0 V. |
| 2 | D | passive | Drain; drain-source voltage rating of 500 V with 13 A continuous drain current at TC = 25°C. |
| 3 | S | passive | Source; main current return terminal of the N-channel MOSFET. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Maplesemi |
| Package | TO-220F-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 500 | V |  | 1 |
| Drain Current - Continuous | ID |  |  | 13 | A | TC= 25°C | 1 |
| Drain Current - Continuous | ID |  |  | 6.4 | A | TC= 100°C (drain current limited by maximum junction temperature) | 1 |
| Drain Current - Pulsed (Note 1) | IDM |  |  | 40 | A | Drain current limited by maximum junction temperature | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Single Pulsed Avalanche Energy (Note 2) | EAS |  |  | 346 | mJ |  | 1 |
| Avalanche Current (Note 1) | IAR |  |  | 10 | A |  | 1 |
| Repetitive Avalanche Energy (Note 1) | EAR |  |  | 41 | mJ |  | 1 |
| Peak Diode Recovery dv/dt (Note 3) | dv/dt |  |  | 5 | V/ns |  | 1 |
| Power Dissipation | PD |  |  | 32.5 | W | TC = 25°C | 1 |
| Operating and Storage Temperature Range | Tj ,Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum lead temperature for soldering purposes | TL |  |  | 300 | °C | 1/8" from case for 5 seconds | 1 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 4 | °C/W |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 47.8 | °C/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 500 |  |  | V | VGS = 0 V, ID = 250 μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 500 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | μA | VDS = 400 V, TC = 125° C | 2 |
| Gate-Body Leakage Current, Forward | IGSSF |  |  | 100 | nA | VGS = 30 V, VDS = 0 V | 2 |
| Gate-Body Leakage Current, Reverse | IGSSR | -100 |  |  | nA | VGS = -30 V, VDS = 0 V | 2 |
| Gate Threshold voltage | VGS(TH) | 2 |  | 4 | V | VDS=VGS, ID =250 uA | 2 |
| Drain-Source on-state resistance | RDS(On) |  | 0.483 | 0.65 | Ω | VGS=10 V, ID = 5 A, TJ = 25°C | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 10 | A |  | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 40 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS= 0 V, IS = 10 A | 2 |

## CAD (KiCad official)

- Symbol: `SLF13N50A`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F-3 (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Maplesemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588892910024187904) (6 pp, sha256 `683e851cd1009ea5`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/slf13n50a-datasheet.pdf)