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SLF13N50A

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Maplesemi MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SLF13N50A

Maplesemi · MOSFETs · TO-220F-3

SLF13N50A from Maplesemi, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with absolute maximum gate-source voltage of ±30 V and threshold of 2.0 to 4.0 V.
2 D passive Drain; drain-source voltage rating of 500 V with 13 A continuous drain current at TC = 25°C.
3 S passive Source; main current return terminal of the N-channel MOSFET.

Key specifications

Parameter Value
Manufacturer Maplesemi
Package TO-220F-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 500 V 1
Drain Current - Continuous ID 13 A TC= 25°C 1
Drain Current - Continuous ID 6.4 A TC= 100°C (drain current limited by maximum junction temperature) 1
Drain Current - Pulsed (Note 1) IDM 40 A Drain current limited by maximum junction temperature 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulsed Avalanche Energy (Note 2) EAS 346 mJ 1
Avalanche Current (Note 1) IAR 10 A 1
Repetitive Avalanche Energy (Note 1) EAR 41 mJ 1
Peak Diode Recovery dv/dt (Note 3) dv/dt 5 V/ns 1
Power Dissipation PD 32.5 W TC = 25°C 1
Operating and Storage Temperature Range Tj ,Tstg -55 150 °C 1
Maximum lead temperature for soldering purposes TL 300 °C 1/8" from case for 5 seconds 1
Thermal Resistance, Junction-to-Case RθJC 4 °C/W 1
Thermal Resistance, Junction-to-Ambient RθJA 47.8 °C/W 1
Drain-Source Breakdown Voltage BVDSS 500 V VGS = 0 V, ID = 250 μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 500 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS = 400 V, TC = 125° C 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -30 V, VDS = 0 V 2
Gate Threshold voltage VGS(TH) 2 4 V VDS=VGS, ID =250 uA 2
Drain-Source on-state resistance RDS(On) 0.483 0.65 Ω VGS=10 V, ID = 5 A, TJ = 25°C 2
Maximum Continuous Drain-Source Diode Forward Current IS 10 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 40 A 2
Diode Forward Voltage VSD 1.2 V VGS= 0 V, IS = 10 A 2

CAD (KiCad official)

  • Symbol: SLF13N50A
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Maplesemi datasheet (6 pp, sha256 683e851cd1009ea5, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF