component
SLF13N50A
Public Made by Adomby adom
Maplesemi MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSLF13N50A
Maplesemi · MOSFETs · TO-220F-3
SLF13N50A from Maplesemi, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum gate-source voltage of ±30 V and threshold of 2.0 to 4.0 V. |
| 2 | D | passive | Drain; drain-source voltage rating of 500 V with 13 A continuous drain current at TC = 25°C. |
| 3 | S | passive | Source; main current return terminal of the N-channel MOSFET. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Maplesemi |
| Package | TO-220F-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 500 | V | 1 | |||
| Drain Current - Continuous | ID | 13 | A | TC= 25°C | 1 | ||
| Drain Current - Continuous | ID | 6.4 | A | TC= 100°C (drain current limited by maximum junction temperature) | 1 | ||
| Drain Current - Pulsed (Note 1) | IDM | 40 | A | Drain current limited by maximum junction temperature | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulsed Avalanche Energy (Note 2) | EAS | 346 | mJ | 1 | |||
| Avalanche Current (Note 1) | IAR | 10 | A | 1 | |||
| Repetitive Avalanche Energy (Note 1) | EAR | 41 | mJ | 1 | |||
| Peak Diode Recovery dv/dt (Note 3) | dv/dt | 5 | V/ns | 1 | |||
| Power Dissipation | PD | 32.5 | W | TC = 25°C | 1 | ||
| Operating and Storage Temperature Range | Tj ,Tstg | -55 | 150 | °C | 1 | ||
| Maximum lead temperature for soldering purposes | TL | 300 | °C | 1/8" from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 4 | °C/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 47.8 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 500 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS = 400 V, TC = 125° C | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 30 V, VDS = 0 V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -30 V, VDS = 0 V | 2 | ||
| Gate Threshold voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID =250 uA | 2 | |
| Drain-Source on-state resistance | RDS(On) | 0.483 | 0.65 | Ω | VGS=10 V, ID = 5 A, TJ = 25°C | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 10 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 40 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS= 0 V, IS = 10 A | 2 |
CAD (KiCad official)
- Symbol:
SLF13N50A - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Maplesemi datasheet (6 pp, sha256
683e851cd1009ea5, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).