component
SI4532ADY-T1-E3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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{
"schema_version": 1,
"type": "component",
"slug": "si4532ady-t1-e3-vb",
"title": "SI4532ADY-T1-E3-VB",
"brief": "VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"transistors-thyristors",
"si4532ady-t1-e3-vb",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "SI4532ADY-T1-E3-VB",
"manufacturer": "VBsemi Elec",
"package": "SO-8",
"pin_count": 8,
"category": "Transistors/Thyristors",
"subcategory": "MOSFETs",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603075641394667520",
"parts": {
"symbol": "si4532ady-t1-e3-vb.kicad_sym",
"footprint": "si4532ady-t1-e3-vb.kicad_mod",
"model_3d": "si4532ady-t1-e3-vb-hero.glb",
"model_3d_plain": "si4532ady-t1-e3-vb-etched.glb",
"model_3d_step": "si4532ady-t1-e3-vb-etched.step",
"model_3d_step_plain": "si4532ady-t1-e3-vb.step",
"lbr": "si4532ady-t1-e3-vb.lbr"
},
"distributor_links": {
"lcsc": "C7463634"
},
"distributor_check": {
"checked_at": "2026-10-18T17:52:03Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "quota"
},
"mouser": {
"pn": null,
"status": "quota"
}
},
"pins": [
{
"number": "1",
"name": "S1",
"type": "passive",
"description": "Source of the N-channel MOSFET (channel 1), rated VDS 30 V."
},
{
"number": "2",
"name": "G1",
"type": "input",
"description": "Gate of the N-channel MOSFET (channel 1), with maximum VGS of ±20 V."
},
{
"number": "3",
"name": "S2",
"type": "passive",
"description": "Source of the P-channel MOSFET (channel 2), rated VDS -30 V."
},
{
"number": "4",
"name": "G2",
"type": "input",
"description": "Gate of the P-channel MOSFET (channel 2), with maximum VGS of ±20 V."
},
{
"number": "5",
"name": "D2",
"type": "passive",
"description": "Drain of the P-channel MOSFET (channel 2), tied to pins 5 to 6, with pulsed drain current IDM of -40 A."
},
{
"number": "6",
"name": "D2",
"type": "passive",
"description": "Drain of the P-channel MOSFET (channel 2), tied to pins 5 to 6, with pulsed drain current IDM of -40 A."
},
{
"number": "7",
"name": "D1",
"type": "passive",
"description": "Drain of the N-channel MOSFET (channel 1), tied to pins 7 to 8, with pulsed drain current IDM of 40 A."
},
{
"number": "8",
"name": "D1",
"type": "passive",
"description": "Drain of the N-channel MOSFET (channel 1), tied to pins 7 to 8, with pulsed drain current IDM of 40 A."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-sonnet-5-5",
"primary_mode": "text+vision",
"consensus_model": "claude-opus-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: Pin-to-number assignment read from the SO-8 pin diagram on page 1 (1=S1, 2=G1, 3=S2, 4=G2, 5/6=D2, 7",
"vision extraction: provenance cannot be text-verified; needs consensus"
],
"pages_sent": 14,
"cost_usd": 0.1891,
"at": "2026-10-18T17:51:48"
},
"datasheet": {
"url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603075641394667520",
"pages": 14,
"sha256": "22ed001b0f7b14d5",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 8,
"described": 8,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "si4532ady-t1-e3-vb.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
6,
4.9,
1.75
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "07f46cff378d30e6c27dfd5a03092c795323f86d91c71fc7e743f4f418dc553a",
"checked": "2026-10-18",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "si4532ady-t1-e3-vb-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
6,
4.9,
1.75
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "0dec1c9d621d03a5b336dada3d61235455302f1db1d7cfe6de566b3122b79083",
"checked": "2026-10-18",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "VBsemi Elec",
"Package": "SO-8",
"Category": "Transistors/Thyristors",
"Pins": "8"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "22ed001b0f7b14d52faa6de4914095d8119c25fc260d79427c1f9190db4285d1",
"rows": [
{
"name": "Drain-Source Voltage, N-Channel",
"symbol": "VDS",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 30,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain-Source Voltage, P-Channel",
"symbol": "VDS",
"kind": "absolute_maximum",
"unit": "V",
"min": -30,
"typ": null,
"max": null,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-Source Voltage, N-Channel",
"symbol": "VGS",
"kind": "absolute_maximum",
"unit": "V",
"min": -20,
"typ": null,
"max": 20,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-Source Voltage, P-Channel",
"symbol": "VGS",
"kind": "absolute_maximum",
"unit": "V",
"min": -20,
"typ": null,
"max": 20,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current, N-Channel",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 8,
"conditions": "TC = 25 °C (TJ = 150 °C); note e package limited",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current, N-Channel",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 6.8,
"conditions": "TC = 70 °C (TJ = 150 °C)",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current, N-Channel",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 5.4,
"conditions": "TA = 70 °C; notes b, c",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current, P-Channel",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": -8,
"typ": null,
"max": null,
"conditions": "TC = 25 °C (TJ = 150 °C); note e package limited",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current, P-Channel",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": -6.8,
"typ": null,
"max": null,
"conditions": "TC = 70 °C (TJ = 150 °C)",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current, P-Channel",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": -6.6,
"typ": null,
"max": null,
"conditions": "TA = 25 °C; notes b, c",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current, P-Channel",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": -5.3,
"typ": null,
"max": null,
"conditions": "TA = 70 °C; notes b, c",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed Drain Current, N-Channel",
"symbol": "IDM",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 40,
"conditions": "10 µs pulse width",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed Drain Current, P-Channel",
"symbol": "IDM",
"kind": "absolute_maximum",
"unit": "A",
"min": -40,
"typ": null,
"max": null,
"conditions": "10 µs pulse width",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Source-Drain Diode Current, N-Channel",
"symbol": "IS",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 2.6,
"conditions": "TC = 25 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Source-Drain Diode Current, P-Channel",
"symbol": "IS",
"kind": "absolute_maximum",
"unit": "A",
"min": -2.6,
"typ": null,
"max": null,
"conditions": "TC = 25 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Source-Drain Diode Current, N-Channel",
"symbol": "IS",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 1.6,
"conditions": "TA = 25 °C; notes b, c",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Source-Drain Diode Current, P-Channel",
"symbol": "IS",
"kind": "absolute_maximum",
"unit": "A",
"min": -1.6,
"typ": null,
"max": null,
"conditions": "TA = 25 °C; notes b, c",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed Source-Drain Current, N-Channel",
"symbol": "ISM",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 40,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed Source-Drain Current, P-Channel",
"symbol": "ISM",
"kind": "absolute_maximum",
"unit": "A",
"min": -40,
"typ": null,
"max": null,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Single Pulse Avalanche Current, N-Channel",
"symbol": "IAS",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 10,
"conditions": "L = 0.1 mH",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Single Pulse Avalanche Current, P-Channel",
"symbol": "IAS",
"kind": "absolute_maximum",
"unit": "A",
"min": -20,
"typ": null,
"max": null,
"conditions": "L = 0.1 mH",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Single Pulse Avalanche Energy",
"symbol": "EAS",
"kind": "absolute_maximum",
"unit": "mJ",
"min": null,
"typ": null,
"max": 520,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Power Dissipation, N-Channel",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 3.1,
"conditions": "TC = 25 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Power Dissipation, P-Channel",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 3.2,
"conditions": "TC = 25 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Power Dissipation, N-Channel",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 2,
"conditions": "TA = 25 °C; notes b, c",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Power Dissipation, P-Channel",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 2,
"conditions": "TA = 25 °C; notes b, c",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Power Dissipation, N-Channel",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 1.28,
"conditions": "TA = 70 °C; notes b, c",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Power Dissipation, P-Channel",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 1.28,
"conditions": "TA = 70 °C; notes b, c",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Operating Junction and Storage Temperature Range",
"symbol": "TJ, Tstg",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Junction-to-Ambient, N-Channel",
"symbol": "RthJA",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 50,
"max": 62.5,
"conditions": "t ≤ 10 s; notes b, d",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Junction-to-Ambient, P-Channel",
"symbol": "RthJA",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 47,
"max": 62.5,
"conditions": "t ≤ 10 s; notes b, d",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Junction-to-Foot (Drain), N-Channel",
"symbol": "RthJF",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 30,
"max": 40,
"conditions": "Steady state",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Junction-to-Foot (Drain), P-Channel",
"symbol": "RthJF",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 29,
"max": 38,
"conditions": "Steady state",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain-Source Breakdown Voltage, N-Channel",
"symbol": "VDS",
"kind": "electrical",
"unit": "V",
"min": 30,
"typ": null,
"max": null,
"conditions": "VGS = 0 V, ID = 250 µA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source Breakdown Voltage, P-Channel",
"symbol": "VDS",
"kind": "electrical",
"unit": "V",
"min": -30,
"typ": null,
"max": null,
"conditions": "VGS = 0 V, ID = -250 µA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate Threshold Voltage, N-Channel",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": 1,
"typ": null,
"max": 2,
"conditions": "VDS = VGS, ID = 250 µA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate Threshold Voltage, P-Channel",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": -1,
"typ": null,
"max": -2,
"conditions": "VDS = VGS, ID = -250 µA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-Body Leakage, N-Channel",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": -100,
"typ": null,
"max": 100,
"conditions": "VDS = 0 V, VGS = ±12 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-Body Leakage, P-Channel",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": -100,
"typ": null,
"max": 100,
"conditions": "VDS = 0 V, VGS = ±12 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero Gate Voltage Drain Current, N-Channel",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": 1,
"conditions": "VDS = 30 V, VGS = 0 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero Gate Voltage Drain Current, P-Channel",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": -1,
"typ": null,
"max": null,
"conditions": "VDS = -30 V, VGS = 0 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero Gate Voltage Drain Current, N-Channel",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": 10,
"conditions": "VDS = 30 V, VGS = 0 V, TJ = 55 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero Gate Voltage Drain Current, P-Channel",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": -10,
"typ": null,
"max": null,
"conditions": "VDS = -30 V, VGS = 0 V, TJ = 55 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "On-State Drain Current, N-Channel",
"symbol": "ID(on)",
"kind": "electrical",
"unit": "A",
"min": 20,
"typ": null,
"max": null,
"conditions": "VDS = 5 V, VGS = 10 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "On-State Drain Current, P-Channel",
"symbol": "ID(on)",
"kind": "electrical",
"unit": "A",
"min": -20,
"typ": null,
"max": null,
"conditions": "VDS = -5 V, VGS = -10 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-State Resistance, N-Channel",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": null,
"max": 0.02,
"conditions": "VGS = 8 V, ID = 6.7 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-State Resistance, N-Channel",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": null,
"max": 0.024,
"conditions": "VGS = 4.5 V, ID = 6.6 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-State Resistance, P-Channel",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": null,
"max": 0.04,
"conditions": "VGS = -10 V, ID = -8 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-State Resistance, P-Channel",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": null,
"max": 0.044,
"conditions": "VGS = -8 V, ID = -6.5 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-State Resistance, P-Channel",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": null,
"max": 0.05,
"conditions": "VGS = -4.5 V, ID = -5 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Body Diode Voltage, N-Channel",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": 0.81,
"max": 1.2,
"conditions": "IS = 5.4 A",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Body Diode Voltage, P-Channel",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": -1.2,
"typ": -0.77,
"max": null,
"conditions": "IS = -2 A",
"source_page": 3,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"si4532ady-t1-e3-vb"
],
"discovery_pitch": "SI4532ADY-T1-E3-VB (VBsemi Elec) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"si4532ady-t1-e3-vb.kicad_sym",
"si4532ady-t1-e3-vb.kicad_mod",
"si4532ady-t1-e3-vb.glb",
"si4532ady-t1-e3-vb.step",
"si4532ady-t1-e3-vb.lbr",
"docs/hero.png",
"docs/si4532ady-t1-e3-vb-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"si4532ady-t1-e3-vb-hero.glb",
"si4532ady-t1-e3-vb-hero.overlay.json",
"si4532ady-t1-e3-vb-etched.glb"
],
"visibility": {
"public": true
}
}