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SI4532ADY-T1-E3-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI4532ADY-T1-E3-VB

VBsemi Elec · MOSFETs · SO-8

SI4532ADY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (channel 1), rated VDS 30 V.
2 G1 input Gate of the N-channel MOSFET (channel 1), with maximum VGS of ±20 V.
3 S2 passive Source of the P-channel MOSFET (channel 2), rated VDS -30 V.
4 G2 input Gate of the P-channel MOSFET (channel 2), with maximum VGS of ±20 V.
5 D2 passive Drain of the P-channel MOSFET (channel 2), tied to pins 5 to 6, with pulsed drain current IDM of -40 A.
6 D2 passive Drain of the P-channel MOSFET (channel 2), tied to pins 5 to 6, with pulsed drain current IDM of -40 A.
7 D1 passive Drain of the N-channel MOSFET (channel 1), tied to pins 7 to 8, with pulsed drain current IDM of 40 A.
8 D1 passive Drain of the N-channel MOSFET (channel 1), tied to pins 7 to 8, with pulsed drain current IDM of 40 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage, N-Channel VDS 30 V 1
Drain-Source Voltage, P-Channel VDS -30 V 1
Gate-Source Voltage, N-Channel VGS -20 20 V 1
Gate-Source Voltage, P-Channel VGS -20 20 V 1
Continuous Drain Current, N-Channel ID 8 A TC = 25 °C (TJ = 150 °C); note e package limited 1
Continuous Drain Current, N-Channel ID 6.8 A TC = 70 °C (TJ = 150 °C) 1
Continuous Drain Current, N-Channel ID 5.4 A TA = 70 °C; notes b, c 1
Continuous Drain Current, P-Channel ID -8 A TC = 25 °C (TJ = 150 °C); note e package limited 1
Continuous Drain Current, P-Channel ID -6.8 A TC = 70 °C (TJ = 150 °C) 1
Continuous Drain Current, P-Channel ID -6.6 A TA = 25 °C; notes b, c 1
Continuous Drain Current, P-Channel ID -5.3 A TA = 70 °C; notes b, c 1
Pulsed Drain Current, N-Channel IDM 40 A 10 µs pulse width 1
Pulsed Drain Current, P-Channel IDM -40 A 10 µs pulse width 1
Source-Drain Diode Current, N-Channel IS 2.6 A TC = 25 °C 1
Source-Drain Diode Current, P-Channel IS -2.6 A TC = 25 °C 1
Source-Drain Diode Current, N-Channel IS 1.6 A TA = 25 °C; notes b, c 1
Source-Drain Diode Current, P-Channel IS -1.6 A TA = 25 °C; notes b, c 1
Pulsed Source-Drain Current, N-Channel ISM 40 A 1
Pulsed Source-Drain Current, P-Channel ISM -40 A 1
Single Pulse Avalanche Current, N-Channel IAS 10 A L = 0.1 mH 1
Single Pulse Avalanche Current, P-Channel IAS -20 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 520 mJ 1
Maximum Power Dissipation, N-Channel PD 3.1 W TC = 25 °C 1
Maximum Power Dissipation, P-Channel PD 3.2 W TC = 25 °C 1
Maximum Power Dissipation, N-Channel PD 2 W TA = 25 °C; notes b, c 1
Maximum Power Dissipation, P-Channel PD 2 W TA = 25 °C; notes b, c 1
Maximum Power Dissipation, N-Channel PD 1.28 W TA = 70 °C; notes b, c 1
Maximum Power Dissipation, P-Channel PD 1.28 W TA = 70 °C; notes b, c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient, N-Channel RthJA 50 62.5 °C/W t ≤ 10 s; notes b, d 1
Maximum Junction-to-Ambient, P-Channel RthJA 47 62.5 °C/W t ≤ 10 s; notes b, d 1
Maximum Junction-to-Foot (Drain), N-Channel RthJF 30 40 °C/W Steady state 1
Maximum Junction-to-Foot (Drain), P-Channel RthJF 29 38 °C/W Steady state 1
Drain-Source Breakdown Voltage, N-Channel VDS 30 V VGS = 0 V, ID = 250 µA 2
Drain-Source Breakdown Voltage, P-Channel VDS -30 V VGS = 0 V, ID = -250 µA 2
Gate Threshold Voltage, N-Channel VGS(th) 1 2 V VDS = VGS, ID = 250 µA 2
Gate Threshold Voltage, P-Channel VGS(th) -1 -2 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage, N-Channel IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 2
Gate-Body Leakage, P-Channel IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 2
Zero Gate Voltage Drain Current, N-Channel IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current, P-Channel IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current, N-Channel IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
Zero Gate Voltage Drain Current, P-Channel IDSS -10 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current, N-Channel ID(on) 20 A VDS = 5 V, VGS = 10 V 2
On-State Drain Current, P-Channel ID(on) -20 A VDS = -5 V, VGS = -10 V 2
Drain-Source On-State Resistance, N-Channel RDS(on) 0.02 Ω VGS = 8 V, ID = 6.7 A 2
Drain-Source On-State Resistance, N-Channel RDS(on) 0.024 Ω VGS = 4.5 V, ID = 6.6 A 2
Drain-Source On-State Resistance, P-Channel RDS(on) 0.04 Ω VGS = -10 V, ID = -8 A 2
Drain-Source On-State Resistance, P-Channel RDS(on) 0.044 Ω VGS = -8 V, ID = -6.5 A 2
Drain-Source On-State Resistance, P-Channel RDS(on) 0.05 Ω VGS = -4.5 V, ID = -5 A 2
Body Diode Voltage, N-Channel VSD 0.81 1.2 V IS = 5.4 A 3
Body Diode Voltage, P-Channel VSD -1.2 -0.77 V IS = -2 A 3

CAD (KiCad official)

  • Symbol: SI4532ADY-T1-E3-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4532ady-t1-e3-vb-etched.step / si4532ady-t1-e3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4532ady-t1-e3-vb.step / si4532ady-t1-e3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 22ed001b0f7b14d5, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF