component
SI4532ADY-T1-E3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSI4532ADY-T1-E3-VB
VBsemi Elec · MOSFETs · SO-8
SI4532ADY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (channel 1), rated VDS 30 V. |
| 2 | G1 | input | Gate of the N-channel MOSFET (channel 1), with maximum VGS of ±20 V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (channel 2), rated VDS -30 V. |
| 4 | G2 | input | Gate of the P-channel MOSFET (channel 2), with maximum VGS of ±20 V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (channel 2), tied to pins 5 to 6, with pulsed drain current IDM of -40 A. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (channel 2), tied to pins 5 to 6, with pulsed drain current IDM of -40 A. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (channel 1), tied to pins 7 to 8, with pulsed drain current IDM of 40 A. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (channel 1), tied to pins 7 to 8, with pulsed drain current IDM of 40 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage, N-Channel | VDS | 30 | V | 1 | |||
| Drain-Source Voltage, P-Channel | VDS | -30 | V | 1 | |||
| Gate-Source Voltage, N-Channel | VGS | -20 | 20 | V | 1 | ||
| Gate-Source Voltage, P-Channel | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current, N-Channel | ID | 8 | A | TC = 25 °C (TJ = 150 °C); note e package limited | 1 | ||
| Continuous Drain Current, N-Channel | ID | 6.8 | A | TC = 70 °C (TJ = 150 °C) | 1 | ||
| Continuous Drain Current, N-Channel | ID | 5.4 | A | TA = 70 °C; notes b, c | 1 | ||
| Continuous Drain Current, P-Channel | ID | -8 | A | TC = 25 °C (TJ = 150 °C); note e package limited | 1 | ||
| Continuous Drain Current, P-Channel | ID | -6.8 | A | TC = 70 °C (TJ = 150 °C) | 1 | ||
| Continuous Drain Current, P-Channel | ID | -6.6 | A | TA = 25 °C; notes b, c | 1 | ||
| Continuous Drain Current, P-Channel | ID | -5.3 | A | TA = 70 °C; notes b, c | 1 | ||
| Pulsed Drain Current, N-Channel | IDM | 40 | A | 10 µs pulse width | 1 | ||
| Pulsed Drain Current, P-Channel | IDM | -40 | A | 10 µs pulse width | 1 | ||
| Source-Drain Diode Current, N-Channel | IS | 2.6 | A | TC = 25 °C | 1 | ||
| Source-Drain Diode Current, P-Channel | IS | -2.6 | A | TC = 25 °C | 1 | ||
| Source-Drain Diode Current, N-Channel | IS | 1.6 | A | TA = 25 °C; notes b, c | 1 | ||
| Source-Drain Diode Current, P-Channel | IS | -1.6 | A | TA = 25 °C; notes b, c | 1 | ||
| Pulsed Source-Drain Current, N-Channel | ISM | 40 | A | 1 | |||
| Pulsed Source-Drain Current, P-Channel | ISM | -40 | A | 1 | |||
| Single Pulse Avalanche Current, N-Channel | IAS | 10 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Current, P-Channel | IAS | -20 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 520 | mJ | 1 | |||
| Maximum Power Dissipation, N-Channel | PD | 3.1 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation, P-Channel | PD | 3.2 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation, N-Channel | PD | 2 | W | TA = 25 °C; notes b, c | 1 | ||
| Maximum Power Dissipation, P-Channel | PD | 2 | W | TA = 25 °C; notes b, c | 1 | ||
| Maximum Power Dissipation, N-Channel | PD | 1.28 | W | TA = 70 °C; notes b, c | 1 | ||
| Maximum Power Dissipation, P-Channel | PD | 1.28 | W | TA = 70 °C; notes b, c | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient, N-Channel | RthJA | 50 | 62.5 | °C/W | t ≤ 10 s; notes b, d | 1 | |
| Maximum Junction-to-Ambient, P-Channel | RthJA | 47 | 62.5 | °C/W | t ≤ 10 s; notes b, d | 1 | |
| Maximum Junction-to-Foot (Drain), N-Channel | RthJF | 30 | 40 | °C/W | Steady state | 1 | |
| Maximum Junction-to-Foot (Drain), P-Channel | RthJF | 29 | 38 | °C/W | Steady state | 1 | |
| Drain-Source Breakdown Voltage, N-Channel | VDS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Drain-Source Breakdown Voltage, P-Channel | VDS | -30 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate Threshold Voltage, N-Channel | VGS(th) | 1 | 2 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate Threshold Voltage, P-Channel | VGS(th) | -1 | -2 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage, N-Channel | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 | |
| Gate-Body Leakage, P-Channel | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 | |
| Zero Gate Voltage Drain Current, N-Channel | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current, P-Channel | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current, N-Channel | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| Zero Gate Voltage Drain Current, P-Channel | IDSS | -10 | µA | VDS = -30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current, N-Channel | ID(on) | 20 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| On-State Drain Current, P-Channel | ID(on) | -20 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance, N-Channel | RDS(on) | 0.02 | Ω | VGS = 8 V, ID = 6.7 A | 2 | ||
| Drain-Source On-State Resistance, N-Channel | RDS(on) | 0.024 | Ω | VGS = 4.5 V, ID = 6.6 A | 2 | ||
| Drain-Source On-State Resistance, P-Channel | RDS(on) | 0.04 | Ω | VGS = -10 V, ID = -8 A | 2 | ||
| Drain-Source On-State Resistance, P-Channel | RDS(on) | 0.044 | Ω | VGS = -8 V, ID = -6.5 A | 2 | ||
| Drain-Source On-State Resistance, P-Channel | RDS(on) | 0.05 | Ω | VGS = -4.5 V, ID = -5 A | 2 | ||
| Body Diode Voltage, N-Channel | VSD | 0.81 | 1.2 | V | IS = 5.4 A | 3 | |
| Body Diode Voltage, P-Channel | VSD | -1.2 | -0.77 | V | IS = -2 A | 3 |
CAD (KiCad official)
- Symbol:
SI4532ADY-T1-E3-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4532ady-t1-e3-vb-etched.step/si4532ady-t1-e3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4532ady-t1-e3-vb.step/si4532ady-t1-e3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
22ed001b0f7b14d5, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).