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SI2310AHE3-TP
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MCC Micro Commercial Components MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si2310ahe3-tp: specified limits as data (metadata.characteristics, 28 rows from the datasheet)
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SI2310AHE3-TP
MCC Micro Commercial Components · MOSFETs · SOT-23
SI2310AHE3-TP from MCC Micro Commercial Components, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate of the N-channel MOSFET; gate-source voltage is rated ±20 V, and VGS(th) is 0.90 V min to 2.0 V max at ID = 250 µA. |
| 2 | SOURCE | passive | Source terminal of the N-channel enhancement-mode MOSFET; the device is rated for drain current ID of 3.0 A continuous and 10 A pulsed (repetitive, pulse width limited by junction temperature). |
| 3 | DRAIN | passive | Drain terminal of the N-channel enhancement-mode MOSFET; drain-source voltage is rated 60 V max, with continuous drain current 3.0 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MCC Micro Commercial Components |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current | ID | 3 | A | 1 | |||
| Pulsed Drain Current | IDM | 10 | A | Repetitive rating, pulse width limited by junction temperature (Note 3) | 1 | ||
| Total Power Dissipation | PD | 1.2 | W | 1 | |||
| Operating Junction Temperature Range | -55 | 150 | °C | 1 | |||
| Storage Temperature Range | -55 | 150 | °C | 1 | |||
| Thermal Resistance Junction to Ambient | 105 | °C/W | Junction to ambient; device mounted on FR-4 PCB, 1 inch 2 pad of 2oz copper (Note 2) | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250µA | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate-Source Leakage Current | IGSS | -50 | 50 | nA | VDS=0V, VGS=±10V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=60V, VGS=0V | 2 | ||
| Gate-Threshold Voltage | VGS(th) | 0.9 | 2 | V | VDS=VGS, ID=250µA | 2 | |
| Drain-Source On-Resistance | RDS(on) | 100 | mΩ | VGS=10V, ID=3A | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 120 | mΩ | VGS=4.5V, ID=2A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=3A | 2 | ||
| Input Capacitance | Ciss | 409 | pF | VDS=10V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 50 | pF | VDS=10V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 41 | pF | VDS=10V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 10.27 | nC | VDS=30V, VGS=10V, ID=3A | 2 | ||
| Gate-Source Charge | Qgs | 1.65 | nC | VDS=30V, VGS=10V, ID=3A | 2 | ||
| Gate-Drain Charge | Qgd | 2.11 | nC | VDS=30V, VGS=10V, ID=3A | 2 | ||
| Reverse Recovery Charge | Qrr | 6.99 | nC | ISD=3A, di/dt=100A/µs | 2 | ||
| Reverse Recovery Time | Trr | 32.6 | ns | ISD=3A, di/dt=100A/µs | 2 | ||
| Turn-On Delay Time | td(on) | 3.6 | ns | VGS=10V, VDS=30V, RL=20Ω, RG=3Ω | 2 | ||
| Turn-On Rise Time | tr | 17.6 | ns | VGS=10V, VDS=30V, RL=20Ω, RG=3Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 13 | ns | VGS=10V, VDS=30V, RL=20Ω, RG=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 23 | ns | VGS=10V, VDS=30V, RL=20Ω, RG=3Ω | 2 |
CAD (KiCad official)
- Symbol:
SI2310AHE3-TP - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2310ahe3-tp-etched.step/si2310ahe3-tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2310ahe3-tp.step/si2310ahe3-tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MCC Micro Commercial Components datasheet (4 pp, sha256
9d265959104de777, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SI2310AHE3-TP
**MCC Micro Commercial Components** · MOSFETs · SOT-23
SI2310AHE3-TP from MCC Micro Commercial Components, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate of the N-channel MOSFET; gate-source voltage is rated ±20 V, and VGS(th) is 0.90 V min to 2.0 V max at ID = 250 µA. |
| 2 | SOURCE | passive | Source terminal of the N-channel enhancement-mode MOSFET; the device is rated for drain current ID of 3.0 A continuous and 10 A pulsed (repetitive, pulse width limited by junction temperature). |
| 3 | DRAIN | passive | Drain terminal of the N-channel enhancement-mode MOSFET; drain-source voltage is rated 60 V max, with continuous drain current 3.0 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MCC Micro Commercial Components |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current | ID | | | 3 | A | | 1 |
| Pulsed Drain Current | IDM | | | 10 | A | Repetitive rating, pulse width limited by junction temperature (Note 3) | 1 |
| Total Power Dissipation | PD | | | 1.2 | W | | 1 |
| Operating Junction Temperature Range | | -55 | | 150 | °C | | 1 |
| Storage Temperature Range | | -55 | | 150 | °C | | 1 |
| Thermal Resistance Junction to Ambient | | | | 105 | °C/W | Junction to ambient; device mounted on FR-4 PCB, 1 inch 2 pad of 2oz copper (Note 2) | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS=0V, ID=250µA | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate-Source Leakage Current | IGSS | -50 | | 50 | nA | VDS=0V, VGS=±10V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=60V, VGS=0V | 2 |
| Gate-Threshold Voltage | VGS(th) | 0.9 | | 2 | V | VDS=VGS, ID=250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | | | 100 | mΩ | VGS=10V, ID=3A | 2 |
| Drain-Source On-Resistance | RDS(on) | | | 120 | mΩ | VGS=4.5V, ID=2A | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=3A | 2 |
| Input Capacitance | Ciss | | 409 | | pF | VDS=10V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 50 | | pF | VDS=10V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 41 | | pF | VDS=10V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg | | 10.27 | | nC | VDS=30V, VGS=10V, ID=3A | 2 |
| Gate-Source Charge | Qgs | | 1.65 | | nC | VDS=30V, VGS=10V, ID=3A | 2 |
| Gate-Drain Charge | Qgd | | 2.11 | | nC | VDS=30V, VGS=10V, ID=3A | 2 |
| Reverse Recovery Charge | Qrr | | 6.99 | | nC | ISD=3A, di/dt=100A/µs | 2 |
| Reverse Recovery Time | Trr | | 32.6 | | ns | ISD=3A, di/dt=100A/µs | 2 |
| Turn-On Delay Time | td(on) | | 3.6 | | ns | VGS=10V, VDS=30V, RL=20Ω, RG=3Ω | 2 |
| Turn-On Rise Time | tr | | 17.6 | | ns | VGS=10V, VDS=30V, RL=20Ω, RG=3Ω | 2 |
| Turn-Off Delay Time | td(off) | | 13 | | ns | VGS=10V, VDS=30V, RL=20Ω, RG=3Ω | 2 |
| Turn-Off Fall Time | tf | | 23 | | ns | VGS=10V, VDS=30V, RL=20Ω, RG=3Ω | 2 |
## CAD (KiCad official)
- Symbol: `SI2310AHE3-TP`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2310ahe3-tp-etched.step` / `si2310ahe3-tp-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2310ahe3-tp.step` / `si2310ahe3-tp.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MCC Micro Commercial Components datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589836207699099648) (4 pp, sha256 `9d265959104de777`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si2310ahe3-tp-datasheet.pdf)