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SI2310AHE3-TP

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MCC Micro Commercial Components MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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package.json Publish 0.1.0 · Ray 1mo ago
page.json si2310ahe3-tp: specified limits as data (metadata.characteristics, 28 rows from the datasheet) · Ray 23d ago
README.md si2310ahe3-tp: specified limits as data (metadata.characteristics, 28 rows from the datasheet) · Ray 23d ago
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SI2310AHE3-TP

MCC Micro Commercial Components · MOSFETs · SOT-23

SI2310AHE3-TP from MCC Micro Commercial Components, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate of the N-channel MOSFET; gate-source voltage is rated ±20 V, and VGS(th) is 0.90 V min to 2.0 V max at ID = 250 µA.
2 SOURCE passive Source terminal of the N-channel enhancement-mode MOSFET; the device is rated for drain current ID of 3.0 A continuous and 10 A pulsed (repetitive, pulse width limited by junction temperature).
3 DRAIN passive Drain terminal of the N-channel enhancement-mode MOSFET; drain-source voltage is rated 60 V max, with continuous drain current 3.0 A.

Key specifications

Parameter Value
Manufacturer MCC Micro Commercial Components
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current ID 3 A 1
Pulsed Drain Current IDM 10 A Repetitive rating, pulse width limited by junction temperature (Note 3) 1
Total Power Dissipation PD 1.2 W 1
Operating Junction Temperature Range -55 150 °C 1
Storage Temperature Range -55 150 °C 1
Thermal Resistance Junction to Ambient 105 °C/W Junction to ambient; device mounted on FR-4 PCB, 1 inch 2 pad of 2oz copper (Note 2) 1
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS=0V, ID=250µA 2
Gate-Source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate-Source Leakage Current IGSS -50 50 nA VDS=0V, VGS=±10V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=60V, VGS=0V 2
Gate-Threshold Voltage VGS(th) 0.9 2 V VDS=VGS, ID=250µA 2
Drain-Source On-Resistance RDS(on) 100 mΩ VGS=10V, ID=3A 2
Drain-Source On-Resistance RDS(on) 120 mΩ VGS=4.5V, ID=2A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=3A 2
Input Capacitance Ciss 409 pF VDS=10V, VGS=0V, f=1MHz 2
Output Capacitance Coss 50 pF VDS=10V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 41 pF VDS=10V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 10.27 nC VDS=30V, VGS=10V, ID=3A 2
Gate-Source Charge Qgs 1.65 nC VDS=30V, VGS=10V, ID=3A 2
Gate-Drain Charge Qgd 2.11 nC VDS=30V, VGS=10V, ID=3A 2
Reverse Recovery Charge Qrr 6.99 nC ISD=3A, di/dt=100A/µs 2
Reverse Recovery Time Trr 32.6 ns ISD=3A, di/dt=100A/µs 2
Turn-On Delay Time td(on) 3.6 ns VGS=10V, VDS=30V, RL=20Ω, RG=3Ω 2
Turn-On Rise Time tr 17.6 ns VGS=10V, VDS=30V, RL=20Ω, RG=3Ω 2
Turn-Off Delay Time td(off) 13 ns VGS=10V, VDS=30V, RL=20Ω, RG=3Ω 2
Turn-Off Fall Time tf 23 ns VGS=10V, VDS=30V, RL=20Ω, RG=3Ω 2

CAD (KiCad official)

  • Symbol: SI2310AHE3-TP
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2310ahe3-tp-etched.step / si2310ahe3-tp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2310ahe3-tp.step / si2310ahe3-tp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MCC Micro Commercial Components datasheet (4 pp, sha256 9d265959104de777, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF