component
SI2310AHE3-TP
Public Made by Adomby adom
MCC Micro Commercial Components MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si2310ahe3-tp: specified limits as data (metadata.characteristics, 28 rows from the datasheet)
2 files changed
+379−1
README.md+35@@ -21,6 +21,41 @@ SI2310AHE3-TP from MCC Micro Commercial Components, in a SOT-23. Pinout and pin | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 60 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Drain Current | ID | | | 3 | A | | 1 |+| Pulsed Drain Current | IDM | | | 10 | A | Repetitive rating, pulse width limited by junction temperature (Note 3) | 1 |+| Total Power Dissipation | PD | | | 1.2 | W | | 1 |+| Operating Junction Temperature Range | | -55 | | 150 | °C | | 1 |+| Storage Temperature Range | | -55 | | 150 | °C | | 1 |+| Thermal Resistance Junction to Ambient | | | | 105 | °C/W | Junction to ambient; device mounted on FR-4 PCB, 1 inch 2 pad of 2oz copper (Note 2) | 1 |+| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS=0V, ID=250µA | 2 |+| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |+| Gate-Source Leakage Current | IGSS | -50 | | 50 | nA | VDS=0V, VGS=±10V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=60V, VGS=0V | 2 |+| Gate-Threshold Voltage | VGS(th) | 0.9 | | 2 | V | VDS=VGS, ID=250µA | 2 |+| Drain-Source On-Resistance | RDS(on) | | | 100 | mΩ | VGS=10V, ID=3A | 2 |+| Drain-Source On-Resistance | RDS(on) | | | 120 | mΩ | VGS=4.5V, ID=2A | 2 |+| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=3A | 2 |+| Input Capacitance | Ciss | | 409 | | pF | VDS=10V, VGS=0V, f=1MHz | 2 |+| Output Capacitance | Coss | | 50 | | pF | VDS=10V, VGS=0V, f=1MHz | 2 |+| Reverse Transfer Capacitance | Crss | | 41 | | pF | VDS=10V, VGS=0V, f=1MHz | 2 |+| Total Gate Charge | Qg | | 10.27 | | nC | VDS=30V, VGS=10V, ID=3A | 2 |+| Gate-Source Charge | Qgs | | 1.65 | | nC | VDS=30V, VGS=10V, ID=3A | 2 |+| Gate-Drain Charge | Qgd | | 2.11 | | nC | VDS=30V, VGS=10V, ID=3A | 2 |+| Reverse Recovery Charge | Qrr | | 6.99 | | nC | ISD=3A, di/dt=100A/µs | 2 |+| Reverse Recovery Time | Trr | | 32.6 | | ns | ISD=3A, di/dt=100A/µs | 2 |+| Turn-On Delay Time | td(on) | | 3.6 | | ns | VGS=10V, VDS=30V, RL=20Ω, RG=3Ω | 2 |+| Turn-On Rise Time | tr | | 17.6 | | ns | VGS=10V, VDS=30V, RL=20Ω, RG=3Ω | 2 |+| Turn-Off Delay Time | td(off) | | 13 | | ns | VGS=10V, VDS=30V, RL=20Ω, RG=3Ω | 2 |+| Turn-Off Fall Time | tf | | 23 | | ns | VGS=10V, VDS=30V, RL=20Ω, RG=3Ω | 2 |+ ## CAD (KiCad official) - Symbol: `SI2310AHE3-TP`
page.json+344−1@@ -150,6 +150,349 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "9d265959104de777",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "Repetitive rating, pulse width limited by junction temperature (Note 3)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction Temperature Range",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction to Ambient",+ "symbol": "",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 105,+ "conditions": "Junction to ambient; device mounted on FR-4 PCB, 1 inch 2 pad of 2oz copper (Note 2)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS=0V, VGS=±20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -50,+ "typ": null,+ "max": 50,+ "conditions": "VDS=0V, VGS=±10V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=60V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.9,+ "typ": null,+ "max": 2,+ "conditions": "VDS=VGS, ID=250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS=10V, ID=3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "VGS=4.5V, ID=2A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "VGS=0V, IS=3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 409,+ "max": null,+ "conditions": "VDS=10V, VGS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 50,+ "max": null,+ "conditions": "VDS=10V, VGS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 41,+ "max": null,+ "conditions": "VDS=10V, VGS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 10.27,+ "max": null,+ "conditions": "VDS=30V, VGS=10V, ID=3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 1.65,+ "max": null,+ "conditions": "VDS=30V, VGS=10V, ID=3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.11,+ "max": null,+ "conditions": "VDS=30V, VGS=10V, ID=3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 6.99,+ "max": null,+ "conditions": "ISD=3A, di/dt=100A/µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "Trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 32.6,+ "max": null,+ "conditions": "ISD=3A, di/dt=100A/µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 3.6,+ "max": null,+ "conditions": "VGS=10V, VDS=30V, RL=20Ω, RG=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 17.6,+ "max": null,+ "conditions": "VGS=10V, VDS=30V, RL=20Ω, RG=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 13,+ "max": null,+ "conditions": "VGS=10V, VDS=30V, RL=20Ω, RG=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 23,+ "max": null,+ "conditions": "VGS=10V, VDS=30V, RL=20Ω, RG=3Ω",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +534,4 @@ "visibility": { "public": true }-}+}