# SI2300-HXY

**HXY MOSFET** · MOSFETs · SOT-23

SI2300-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the absolute maximum gate-source voltage is ±12 V, and the part is specified for operation at gate voltages as low as 2.5 V. |
| 2 | D | passive | Drain of the MOSFET; absolute maximum ratings are 20 V drain-source voltage, 6 A continuous drain current and 25 A pulsed drain current. |
| 3 | S | passive | Source of the MOSFET, the reference terminal for VGS and VDS; the body diode forward voltage is 0.75 V typical and 1 V maximum at IS = 1 A with VGS = 0 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V (BR) DSS | 20 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Gate-source leakage current | IGSS | -100 |  | 100 | nA | VDS = 0V, VGS = ±12V | 2 |
| Gate threshold voltage | VGS(th) | 0.5 | 0.7 | 1 | V | VDS = VGS, ID = 250µA | 2 |
| Forward transconductance | gfS | 4 |  |  | S | VDS = 5V, ID = 3.8A | 2 |
| Gate-source voltage | VGS | -12 |  | 12 | V |  | 1 |
| Operating junction and storage temperature range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Drain-source voltage | VDS |  |  | 20 | V | TA = 25℃ unless otherwise noted | 1 |
| Drain current-continuous | ID |  |  | 6 | A | TA = 25℃ unless otherwise noted | 1 |
| Drain current-pulsed | IDM |  |  | 25 | A | Note 1 | 1 |
| Maximum power dissipation | PD |  |  | 0.35 | W | TA = 25℃ unless otherwise noted | 1 |
| Thermal resistance, junction-to-ambient | RθJA |  |  | 100 | ℃/W | Note 2 | 1 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VDS = 16V, VGS = 0V | 2 |
| Drain-source on-state resistance | RDS(on) |  | 22 | 27 | mΩ | VGS = 4.5V, ID = 5.0A | 2 |
| Drain-source on-state resistance | RDS(on) |  |  | 35 | mΩ | VGS = 2.5V, ID = 4.0A | 2 |
| Drain-source on-state resistance | RDS(on) |  |  | 73 | mΩ | VGS = 1.8V, ID = 2.0A | 2 |
| Diode forward voltage | VSD |  | 0.75 | 1 | V | VGS = 0V, IS = 1A | 2 |

## CAD (KiCad official)

- Symbol: `SI2300-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2300-hxy-etched.step` / `si2300-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2300-hxy.step` / `si2300-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758130855682285568) (5 pp, sha256 `696cde310e1d0c0e`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2300-hxy-datasheet.pdf)