component
SI2300-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2300-HXY
HXY MOSFET · MOSFETs · SOT-23
SI2300-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the absolute maximum gate-source voltage is ±12 V, and the part is specified for operation at gate voltages as low as 2.5 V. |
| 2 | D | passive | Drain of the MOSFET; absolute maximum ratings are 20 V drain-source voltage, 6 A continuous drain current and 25 A pulsed drain current. |
| 3 | S | passive | Source of the MOSFET, the reference terminal for VGS and VDS; the body diode forward voltage is 0.75 V typical and 1 V maximum at IS = 1 A with VGS = 0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V (BR) DSS | 20 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate-source leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±12V | 2 | |
| Gate threshold voltage | VGS(th) | 0.5 | 0.7 | 1 | V | VDS = VGS, ID = 250µA | 2 |
| Forward transconductance | gfS | 4 | S | VDS = 5V, ID = 3.8A | 2 | ||
| Gate-source voltage | VGS | -12 | 12 | V | 1 | ||
| Operating junction and storage temperature range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-source voltage | VDS | 20 | V | TA = 25℃ unless otherwise noted | 1 | ||
| Drain current-continuous | ID | 6 | A | TA = 25℃ unless otherwise noted | 1 | ||
| Drain current-pulsed | IDM | 25 | A | Note 1 | 1 | ||
| Maximum power dissipation | PD | 0.35 | W | TA = 25℃ unless otherwise noted | 1 | ||
| Thermal resistance, junction-to-ambient | RθJA | 100 | ℃/W | Note 2 | 1 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS = 16V, VGS = 0V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 22 | 27 | mΩ | VGS = 4.5V, ID = 5.0A | 2 | |
| Drain-source on-state resistance | RDS(on) | 35 | mΩ | VGS = 2.5V, ID = 4.0A | 2 | ||
| Drain-source on-state resistance | RDS(on) | 73 | mΩ | VGS = 1.8V, ID = 2.0A | 2 | ||
| Diode forward voltage | VSD | 0.75 | 1 | V | VGS = 0V, IS = 1A | 2 |
CAD (KiCad official)
- Symbol:
SI2300-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2300-hxy-etched.step/si2300-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2300-hxy.step/si2300-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
696cde310e1d0c0e, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).