component
SI2300-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si2300-hxy: specified limits as data (metadata.characteristics, 16 rows from the datasheet)
2 files changed
+223−1
README.md+23@@ -21,6 +21,29 @@ SI2300-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted f | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source breakdown voltage | V (BR) DSS | 20 | | | V | VGS = 0V, ID = 250µA | 2 |+| Gate-source leakage current | IGSS | -100 | | 100 | nA | VDS = 0V, VGS = ±12V | 2 |+| Gate threshold voltage | VGS(th) | 0.5 | 0.7 | 1 | V | VDS = VGS, ID = 250µA | 2 |+| Forward transconductance | gfS | 4 | | | S | VDS = 5V, ID = 3.8A | 2 |+| Gate-source voltage | VGS | -12 | | 12 | V | | 1 |+| Operating junction and storage temperature range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |+| Drain-source voltage | VDS | | | 20 | V | TA = 25℃ unless otherwise noted | 1 |+| Drain current-continuous | ID | | | 6 | A | TA = 25℃ unless otherwise noted | 1 |+| Drain current-pulsed | IDM | | | 25 | A | Note 1 | 1 |+| Maximum power dissipation | PD | | | 0.35 | W | TA = 25℃ unless otherwise noted | 1 |+| Thermal resistance, junction-to-ambient | RθJA | | | 100 | ℃/W | Note 2 | 1 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS = 16V, VGS = 0V | 2 |+| Drain-source on-state resistance | RDS(on) | | 22 | 27 | mΩ | VGS = 4.5V, ID = 5.0A | 2 |+| Drain-source on-state resistance | RDS(on) | | | 35 | mΩ | VGS = 2.5V, ID = 4.0A | 2 |+| Drain-source on-state resistance | RDS(on) | | | 73 | mΩ | VGS = 1.8V, ID = 2.0A | 2 |+| Diode forward voltage | VSD | | 0.75 | 1 | V | VGS = 0V, IS = 1A | 2 |+ ## CAD (KiCad official) - Symbol: `SI2300-HXY`
page.json+200−1@@ -147,6 +147,205 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "696cde310e1d0c0e",+ "rows": [+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V (BR) DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = 250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0V, VGS = ±12V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.5,+ "typ": 0.7,+ "max": 1,+ "conditions": "VDS = VGS, ID = 250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward transconductance",+ "symbol": "gfS",+ "kind": "electrical",+ "unit": "S",+ "min": 4,+ "typ": null,+ "max": null,+ "conditions": "VDS = 5V, ID = 3.8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating junction and storage temperature range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "TA = 25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain current-continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "TA = 25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain current-pulsed",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "Note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.35,+ "conditions": "TA = 25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction-to-ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "Note 2",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 16V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 22,+ "max": 27,+ "conditions": "VGS = 4.5V, ID = 5.0A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 35,+ "conditions": "VGS = 2.5V, ID = 4.0A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 73,+ "conditions": "VGS = 1.8V, ID = 2.0A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.75,+ "max": 1,+ "conditions": "VGS = 0V, IS = 1A",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +387,4 @@ "visibility": { "public": true }-}+}