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SI1553CDL-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SC-70-6(SOT-363). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si1553cdl-t1-ge3: specified limits as data (metadata.characteristics, 59 rows from the datasheet)
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SI1553CDL-T1-GE3
Vishay Intertech · MOSFETs · SC-70-6(SOT-363)
SI1553CDL-T1-GE3 from Vishay Intertech, in a SC-70-6(SOT-363). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (channel 1), rated for VDS 20 V and continuous drain current up to 0.7 A. |
| 2 | G1 | input | Gate of the N-channel MOSFET (channel 1), with a maximum gate-source voltage of ±12 V and a threshold of 0.6 to 1.5 V. |
| 3 | D2 | passive | Drain of the P-channel MOSFET (channel 2), rated for VDS -20 V and continuous drain current up to -0.5 A. |
| 4 | S2 | passive | Source of the P-channel MOSFET (channel 2), rated for VDS -20 V. |
| 5 | G2 | input | Gate of the P-channel MOSFET (channel 2), with a maximum gate-source voltage of ±12 V and a threshold of -0.6 to -1.5 V. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (channel 1), rated for VDS 20 V and pulsed drain current of 2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SC-70-6(SOT-363) |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 20 | V | 1 | |||
| Drain-Source Voltage (P-Channel) | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current, TC = 25 °C (N-Channel) | ID | 0.7 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current, TC = 25 °C (P-Channel) | ID | -0.5 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current, TA = 25 °C (N-Channel) | ID | 0.7 | A | TA = 25 °C | 1 | ||
| Continuous Drain Current, TA = 25 °C (P-Channel) | ID | -0.4 | A | TA = 25 °C | 1 | ||
| Source-Drain Current Diode Current (N-Channel) | IS | 0.3 | A | TC = 25 °C | 1 | ||
| Source-Drain Current Diode Current (P-Channel) | IS | -0.3 | A | TC = 25 °C | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 2 | A | t = 300 μs | 1 | ||
| Pulsed Drain Current (P-Channel) | IDM | -1 | A | t = 300 μs | 1 | ||
| Maximum Power Dissipation, TC = 25 °C (N-Channel and P-Channel) | PD | 0.34 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation, TA = 25 °C (N-Channel and P-Channel) | PD | 0.29 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (N-Channel and P-Channel) | RthJA | 365 | 438 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Foot (Drain) (N-Channel and P-Channel) | RthJF | 308 | 370 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage (N-Channel) | VDS | 20 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Drain-Source Breakdown Voltage (P-Channel) | VDS | -20 | V | VGS = 0 V, ID = -250 μA | 2 | ||
| Gate-Source Threshold Voltage (N-Channel) | VGS(th) | 0.6 | 1.5 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Threshold Voltage (P-Channel) | VGS(th) | -0.6 | -1.5 | V | VDS = VGS, ID = -250 μA | 2 | |
| Gate-Source Leakage (N-Channel and P-Channel) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 | |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 1 | μA | VDS = 20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -1 | μA | VDS = -20 V, VGS = 0 V | 2 | ||
| On-State Drain Current (N-Channel) | ID(on) | 2 | A | VDS = 5 V, VGS = 5 V | 2 | ||
| On-State Drain Current (P-Channel) | ID(on) | -1 | A | VDS = -5 V, VGS = -5 V | 2 | ||
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | 0.325 | 0.39 | Ω | VGS = 4.5 V, ID = 0.7 A | 2 | |
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | 0.708 | 0.85 | Ω | VGS = -4.5 V, ID = -0.4 A | 2 | |
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | 0.425 | 0.51 | Ω | VGS = 2.7 V, ID = 0.4 A | 2 | |
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | 1.13 | 1.35 | Ω | VGS = -2.7 V, ID = -0.2 A | 2 | |
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | 0.462 | 0.578 | Ω | VGS = 2.5 V, ID = 0.4 A | 2 | |
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | 1.23 | 1.48 | Ω | VGS = -2.5 V, ID = -0.2 A | 2 | |
| Total Gate Charge (N-Channel) | Qg | 1.2 | 1.8 | nC | VDS = 10 V, VGS = 10 V, ID = 0.7 A | 2 | |
| Total Gate Charge (P-Channel) | Qg | 1.9 | 3 | nC | VDS = -10 V, VGS = -10 V, ID = -0.5 A | 2 | |
| Total Gate Charge (N-Channel) | Qg | 0.55 | 1.1 | nC | VDS = 10 V, VGS = 4.5 V, ID = 0.5 A | 2 | |
| Total Gate Charge (P-Channel) | Qg | 0.95 | 1.5 | nC | VDS = -10 V, VGS = -4.5 V, ID = -0.4 A | 2 | |
| Gate Resistance (N-Channel) | Rg | 1.5 | 7.2 | 14.4 | Ω | f = 1 MHz | 2 |
| Gate Resistance (P-Channel) | Rg | 2.1 | 10.3 | 20.6 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time (N-Channel) | td(on) | 2 | 4 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| Turn-On Delay Time (P-Channel) | td(on) | 2 | 4 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω | 3 | |
| Rise Time (N-Channel) | tr | 14 | 21 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| Rise Time (P-Channel) | tr | 9 | 18 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω | 3 | |
| Turn-Off Delay Time (N-Channel) | td(off) | 11 | 20 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| Turn-Off Delay Time (P-Channel) | td(off) | 10 | 20 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω | 3 | |
| Fall Time (N-Channel) | tf | 7 | 14 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| Fall Time (P-Channel) | tf | 7 | 14 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω | 3 | |
| Turn-On Delay Time (N-Channel) | td(on) | 16 | 24 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω | 3 | |
| Turn-On Delay Time (P-Channel) | td(on) | 15 | 23 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω | 3 | |
| Rise Time (N-Channel) | tr | 22 | 33 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω | 3 | |
| Rise Time (P-Channel) | tr | 15 | 23 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω | 3 | |
| Turn-Off Delay Time (N-Channel) | td(off) | 22 | 33 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω | 3 | |
| Turn-Off Delay Time (P-Channel) | td(off) | 12 | 20 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω | 3 | |
| Fall Time (N-Channel) | tf | 13 | 20 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω | 3 | |
| Fall Time (P-Channel) | tf | 8 | 16 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω | 3 | |
| Pulse Diode Forward Current (N-Channel) | ISM | 2 | A | 3 | |||
| Pulse Diode Forward Current (P-Channel) | ISM | -1 | A | 3 | |||
| Body Diode Voltage (N-Channel) | VSD | 0.8 | 1.2 | V | IS = 0.5 A | 3 | |
| Body Diode Voltage (P-Channel) | VSD | -0.8 | -1.2 | V | IS = -0.4 A | 3 | |
| Body Diode Reverse Recovery Time (N-Channel) | trr | 8 | 15 | ns | IF = 0.5 A, dI/dt = 100 A/μs, TJ = 25 °C | 3 | |
| Body Diode Reverse Recovery Time (P-Channel) | trr | 12 | 20 | ns | IF = -0.4 A, dI/dt = -100 A/μs, TJ = 25 °C | 3 |
CAD (KiCad official)
- Symbol:
SI1553CDL-T1-GE3 - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SC-70-6(SOT-363) (KiCad packages3D, STEP)
- 3D model files:
si1553cdl-t1-ge3-etched.step/si1553cdl-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si1553cdl-t1-ge3.step/si1553cdl-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (16 pp, sha256
8f1b800527a12550, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SI1553CDL-T1-GE3
**Vishay Intertech** · MOSFETs · SC-70-6(SOT-363)
SI1553CDL-T1-GE3 from Vishay Intertech, in a SC-70-6(SOT-363). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (channel 1), rated for VDS 20 V and continuous drain current up to 0.7 A. |
| 2 | G1 | input | Gate of the N-channel MOSFET (channel 1), with a maximum gate-source voltage of ±12 V and a threshold of 0.6 to 1.5 V. |
| 3 | D2 | passive | Drain of the P-channel MOSFET (channel 2), rated for VDS -20 V and continuous drain current up to -0.5 A. |
| 4 | S2 | passive | Source of the P-channel MOSFET (channel 2), rated for VDS -20 V. |
| 5 | G2 | input | Gate of the P-channel MOSFET (channel 2), with a maximum gate-source voltage of ±12 V and a threshold of -0.6 to -1.5 V. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (channel 1), rated for VDS 20 V and pulsed drain current of 2 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SC-70-6(SOT-363) |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | | | 20 | V | | 1 |
| Drain-Source Voltage (P-Channel) | VDS | | | -20 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current, TC = 25 °C (N-Channel) | ID | | | 0.7 | A | TC = 25 °C | 1 |
| Continuous Drain Current, TC = 25 °C (P-Channel) | ID | | | -0.5 | A | TC = 25 °C | 1 |
| Continuous Drain Current, TA = 25 °C (N-Channel) | ID | | | 0.7 | A | TA = 25 °C | 1 |
| Continuous Drain Current, TA = 25 °C (P-Channel) | ID | | | -0.4 | A | TA = 25 °C | 1 |
| Source-Drain Current Diode Current (N-Channel) | IS | | | 0.3 | A | TC = 25 °C | 1 |
| Source-Drain Current Diode Current (P-Channel) | IS | | | -0.3 | A | TC = 25 °C | 1 |
| Pulsed Drain Current (N-Channel) | IDM | | | 2 | A | t = 300 μs | 1 |
| Pulsed Drain Current (P-Channel) | IDM | | | -1 | A | t = 300 μs | 1 |
| Maximum Power Dissipation, TC = 25 °C (N-Channel and P-Channel) | PD | | | 0.34 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation, TA = 25 °C (N-Channel and P-Channel) | PD | | | 0.29 | W | TA = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient (N-Channel and P-Channel) | RthJA | | 365 | 438 | °C/W | t ≤ 10 s | 1 |
| Maximum Junction-to-Foot (Drain) (N-Channel and P-Channel) | RthJF | | 308 | 370 | °C/W | Steady State | 1 |
| Drain-Source Breakdown Voltage (N-Channel) | VDS | 20 | | | V | VGS = 0 V, ID = 250 μA | 2 |
| Drain-Source Breakdown Voltage (P-Channel) | VDS | -20 | | | V | VGS = 0 V, ID = -250 μA | 2 |
| Gate-Source Threshold Voltage (N-Channel) | VGS(th) | 0.6 | | 1.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage (P-Channel) | VGS(th) | -0.6 | | -1.5 | V | VDS = VGS, ID = -250 μA | 2 |
| Gate-Source Leakage (N-Channel and P-Channel) | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | | | 1 | μA | VDS = 20 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | | | -1 | μA | VDS = -20 V, VGS = 0 V | 2 |
| On-State Drain Current (N-Channel) | ID(on) | 2 | | | A | VDS = 5 V, VGS = 5 V | 2 |
| On-State Drain Current (P-Channel) | ID(on) | -1 | | | A | VDS = -5 V, VGS = -5 V | 2 |
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | | 0.325 | 0.39 | Ω | VGS = 4.5 V, ID = 0.7 A | 2 |
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | | 0.708 | 0.85 | Ω | VGS = -4.5 V, ID = -0.4 A | 2 |
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | | 0.425 | 0.51 | Ω | VGS = 2.7 V, ID = 0.4 A | 2 |
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | | 1.13 | 1.35 | Ω | VGS = -2.7 V, ID = -0.2 A | 2 |
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | | 0.462 | 0.578 | Ω | VGS = 2.5 V, ID = 0.4 A | 2 |
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | | 1.23 | 1.48 | Ω | VGS = -2.5 V, ID = -0.2 A | 2 |
| Total Gate Charge (N-Channel) | Qg | | 1.2 | 1.8 | nC | VDS = 10 V, VGS = 10 V, ID = 0.7 A | 2 |
| Total Gate Charge (P-Channel) | Qg | | 1.9 | 3 | nC | VDS = -10 V, VGS = -10 V, ID = -0.5 A | 2 |
| Total Gate Charge (N-Channel) | Qg | | 0.55 | 1.1 | nC | VDS = 10 V, VGS = 4.5 V, ID = 0.5 A | 2 |
| Total Gate Charge (P-Channel) | Qg | | 0.95 | 1.5 | nC | VDS = -10 V, VGS = -4.5 V, ID = -0.4 A | 2 |
| Gate Resistance (N-Channel) | Rg | 1.5 | 7.2 | 14.4 | Ω | f = 1 MHz | 2 |
| Gate Resistance (P-Channel) | Rg | 2.1 | 10.3 | 20.6 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time (N-Channel) | td(on) | | 2 | 4 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω | 3 |
| Turn-On Delay Time (P-Channel) | td(on) | | 2 | 4 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω | 3 |
| Rise Time (N-Channel) | tr | | 14 | 21 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω | 3 |
| Rise Time (P-Channel) | tr | | 9 | 18 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω | 3 |
| Turn-Off Delay Time (N-Channel) | td(off) | | 11 | 20 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω | 3 |
| Turn-Off Delay Time (P-Channel) | td(off) | | 10 | 20 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω | 3 |
| Fall Time (N-Channel) | tf | | 7 | 14 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω | 3 |
| Fall Time (P-Channel) | tf | | 7 | 14 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω | 3 |
| Turn-On Delay Time (N-Channel) | td(on) | | 16 | 24 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω | 3 |
| Turn-On Delay Time (P-Channel) | td(on) | | 15 | 23 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω | 3 |
| Rise Time (N-Channel) | tr | | 22 | 33 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω | 3 |
| Rise Time (P-Channel) | tr | | 15 | 23 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω | 3 |
| Turn-Off Delay Time (N-Channel) | td(off) | | 22 | 33 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω | 3 |
| Turn-Off Delay Time (P-Channel) | td(off) | | 12 | 20 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω | 3 |
| Fall Time (N-Channel) | tf | | 13 | 20 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω | 3 |
| Fall Time (P-Channel) | tf | | 8 | 16 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω | 3 |
| Pulse Diode Forward Current (N-Channel) | ISM | | | 2 | A | | 3 |
| Pulse Diode Forward Current (P-Channel) | ISM | | | -1 | A | | 3 |
| Body Diode Voltage (N-Channel) | VSD | | 0.8 | 1.2 | V | IS = 0.5 A | 3 |
| Body Diode Voltage (P-Channel) | VSD | | -0.8 | -1.2 | V | IS = -0.4 A | 3 |
| Body Diode Reverse Recovery Time (N-Channel) | trr | | 8 | 15 | ns | IF = 0.5 A, dI/dt = 100 A/μs, TJ = 25 °C | 3 |
| Body Diode Reverse Recovery Time (P-Channel) | trr | | 12 | 20 | ns | IF = -0.4 A, dI/dt = -100 A/μs, TJ = 25 °C | 3 |
## CAD (KiCad official)
- Symbol: `SI1553CDL-T1-GE3`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SC-70-6(SOT-363) (KiCad packages3D, STEP)
- 3D model files: `si1553cdl-t1-ge3-etched.step` / `si1553cdl-t1-ge3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si1553cdl-t1-ge3.step` / `si1553cdl-t1-ge3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588886108973240320) (16 pp, sha256 `8f1b800527a12550`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si1553cdl-t1-ge3-datasheet.pdf)