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SI1553CDL-T1-GE3
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Vishay Intertech MOSFETs, SC-70-6(SOT-363). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si1553cdl-t1-ge3: specified limits as data (metadata.characteristics, 59 rows from the datasheet)
2 files changed
+782−1
README.md+66@@ -24,6 +24,72 @@ SI1553CDL-T1-GE3 from Vishay Intertech, in a SC-70-6(SOT-363). Pinout and pin de | Category | Transistors/Thyristors | | Pins | 6 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage (N-Channel) | VDS | | | 20 | V | | 1 |+| Drain-Source Voltage (P-Channel) | VDS | | | -20 | V | | 1 |+| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |+| Continuous Drain Current, TC = 25 °C (N-Channel) | ID | | | 0.7 | A | TC = 25 °C | 1 |+| Continuous Drain Current, TC = 25 °C (P-Channel) | ID | | | -0.5 | A | TC = 25 °C | 1 |+| Continuous Drain Current, TA = 25 °C (N-Channel) | ID | | | 0.7 | A | TA = 25 °C | 1 |+| Continuous Drain Current, TA = 25 °C (P-Channel) | ID | | | -0.4 | A | TA = 25 °C | 1 |+| Source-Drain Current Diode Current (N-Channel) | IS | | | 0.3 | A | TC = 25 °C | 1 |+| Source-Drain Current Diode Current (P-Channel) | IS | | | -0.3 | A | TC = 25 °C | 1 |+| Pulsed Drain Current (N-Channel) | IDM | | | 2 | A | t = 300 μs | 1 |+| Pulsed Drain Current (P-Channel) | IDM | | | -1 | A | t = 300 μs | 1 |+| Maximum Power Dissipation, TC = 25 °C (N-Channel and P-Channel) | PD | | | 0.34 | W | TC = 25 °C | 1 |+| Maximum Power Dissipation, TA = 25 °C (N-Channel and P-Channel) | PD | | | 0.29 | W | TA = 25 °C | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient (N-Channel and P-Channel) | RthJA | | 365 | 438 | °C/W | t ≤ 10 s | 1 |+| Maximum Junction-to-Foot (Drain) (N-Channel and P-Channel) | RthJF | | 308 | 370 | °C/W | Steady State | 1 |+| Drain-Source Breakdown Voltage (N-Channel) | VDS | 20 | | | V | VGS = 0 V, ID = 250 μA | 2 |+| Drain-Source Breakdown Voltage (P-Channel) | VDS | -20 | | | V | VGS = 0 V, ID = -250 μA | 2 |+| Gate-Source Threshold Voltage (N-Channel) | VGS(th) | 0.6 | | 1.5 | V | VDS = VGS, ID = 250 μA | 2 |+| Gate-Source Threshold Voltage (P-Channel) | VGS(th) | -0.6 | | -1.5 | V | VDS = VGS, ID = -250 μA | 2 |+| Gate-Source Leakage (N-Channel and P-Channel) | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 |+| Zero Gate Voltage Drain Current (N-Channel) | IDSS | | | 1 | μA | VDS = 20 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current (P-Channel) | IDSS | | | -1 | μA | VDS = -20 V, VGS = 0 V | 2 |+| On-State Drain Current (N-Channel) | ID(on) | 2 | | | A | VDS = 5 V, VGS = 5 V | 2 |+| On-State Drain Current (P-Channel) | ID(on) | -1 | | | A | VDS = -5 V, VGS = -5 V | 2 |+| Drain-Source On-State Resistance (N-Channel) | RDS(on) | | 0.325 | 0.39 | Ω | VGS = 4.5 V, ID = 0.7 A | 2 |+| Drain-Source On-State Resistance (P-Channel) | RDS(on) | | 0.708 | 0.85 | Ω | VGS = -4.5 V, ID = -0.4 A | 2 |+| Drain-Source On-State Resistance (N-Channel) | RDS(on) | | 0.425 | 0.51 | Ω | VGS = 2.7 V, ID = 0.4 A | 2 |+| Drain-Source On-State Resistance (P-Channel) | RDS(on) | | 1.13 | 1.35 | Ω | VGS = -2.7 V, ID = -0.2 A | 2 |+| Drain-Source On-State Resistance (N-Channel) | RDS(on) | | 0.462 | 0.578 | Ω | VGS = 2.5 V, ID = 0.4 A | 2 |+| Drain-Source On-State Resistance (P-Channel) | RDS(on) | | 1.23 | 1.48 | Ω | VGS = -2.5 V, ID = -0.2 A | 2 |+| Total Gate Charge (N-Channel) | Qg | | 1.2 | 1.8 | nC | VDS = 10 V, VGS = 10 V, ID = 0.7 A | 2 |+| Total Gate Charge (P-Channel) | Qg | | 1.9 | 3 | nC | VDS = -10 V, VGS = -10 V, ID = -0.5 A | 2 |+| Total Gate Charge (N-Channel) | Qg | | 0.55 | 1.1 | nC | VDS = 10 V, VGS = 4.5 V, ID = 0.5 A | 2 |+| Total Gate Charge (P-Channel) | Qg | | 0.95 | 1.5 | nC | VDS = -10 V, VGS = -4.5 V, ID = -0.4 A | 2 |+| Gate Resistance (N-Channel) | Rg | 1.5 | 7.2 | 14.4 | Ω | f = 1 MHz | 2 |+| Gate Resistance (P-Channel) | Rg | 2.1 | 10.3 | 20.6 | Ω | f = 1 MHz | 2 |+| Turn-On Delay Time (N-Channel) | td(on) | | 2 | 4 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω | 3 |+| Turn-On Delay Time (P-Channel) | td(on) | | 2 | 4 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω | 3 |+| Rise Time (N-Channel) | tr | | 14 | 21 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω | 3 |+| Rise Time (P-Channel) | tr | | 9 | 18 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω | 3 |+| Turn-Off Delay Time (N-Channel) | td(off) | | 11 | 20 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω | 3 |+| Turn-Off Delay Time (P-Channel) | td(off) | | 10 | 20 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω | 3 |+| Fall Time (N-Channel) | tf | | 7 | 14 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω | 3 |+| Fall Time (P-Channel) | tf | | 7 | 14 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω | 3 |+| Turn-On Delay Time (N-Channel) | td(on) | | 16 | 24 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω | 3 |+| Turn-On Delay Time (P-Channel) | td(on) | | 15 | 23 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω | 3 |+| Rise Time (N-Channel) | tr | | 22 | 33 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω | 3 |+| Rise Time (P-Channel) | tr | | 15 | 23 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω | 3 |+| Turn-Off Delay Time (N-Channel) | td(off) | | 22 | 33 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω | 3 |+| Turn-Off Delay Time (P-Channel) | td(off) | | 12 | 20 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω | 3 |+| Fall Time (N-Channel) | tf | | 13 | 20 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω | 3 |+| Fall Time (P-Channel) | tf | | 8 | 16 | ns | VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω | 3 |+| Pulse Diode Forward Current (N-Channel) | ISM | | | 2 | A | | 3 |+| Pulse Diode Forward Current (P-Channel) | ISM | | | -1 | A | | 3 |+| Body Diode Voltage (N-Channel) | VSD | | 0.8 | 1.2 | V | IS = 0.5 A | 3 |+| Body Diode Voltage (P-Channel) | VSD | | -0.8 | -1.2 | V | IS = -0.4 A | 3 |+| Body Diode Reverse Recovery Time (N-Channel) | trr | | 8 | 15 | ns | IF = 0.5 A, dI/dt = 100 A/μs, TJ = 25 °C | 3 |+| Body Diode Reverse Recovery Time (P-Channel) | trr | | 12 | 20 | ns | IF = -0.4 A, dI/dt = -100 A/μs, TJ = 25 °C | 3 |+ ## CAD (KiCad official) - Symbol: `SI1553CDL-T1-GE3`
page.json+716−1@@ -168,6 +168,721 @@ "Package": "SC-70-6(SOT-363)", "Category": "Transistors/Thyristors", "Pins": "6"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "8f1b800527a12550",+ "rows": [+ {+ "name": "Drain-Source Voltage (N-Channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage (P-Channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current, TC = 25 °C (N-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.7,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current, TC = 25 °C (P-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -0.5,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current, TA = 25 °C (N-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.7,+ "conditions": "TA = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current, TA = 25 °C (P-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -0.4,+ "conditions": "TA = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Source-Drain Current Diode Current (N-Channel)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.3,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Source-Drain Current Diode Current (P-Channel)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -0.3,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (N-Channel)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "t = 300 μs",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (P-Channel)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "t = 300 μs",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation, TC = 25 °C (N-Channel and P-Channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.34,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation, TA = 25 °C (N-Channel and P-Channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.29,+ "conditions": "TA = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (N-Channel and P-Channel)",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 365,+ "max": 438,+ "conditions": "t ≤ 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Foot (Drain) (N-Channel and P-Channel)",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 308,+ "max": 370,+ "conditions": "Steady State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage (N-Channel)",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage (P-Channel)",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = -250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage (N-Channel)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.6,+ "typ": null,+ "max": 1.5,+ "conditions": "VDS = VGS, ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage (P-Channel)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.6,+ "typ": null,+ "max": -1.5,+ "conditions": "VDS = VGS, ID = -250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage (N-Channel and P-Channel)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ± 12 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (N-Channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 20 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (P-Channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS = -20 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current (N-Channel)",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": 2,+ "typ": null,+ "max": null,+ "conditions": "VDS = 5 V, VGS = 5 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current (P-Channel)",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": -1,+ "typ": null,+ "max": null,+ "conditions": "VDS = -5 V, VGS = -5 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (N-Channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.325,+ "max": 0.39,+ "conditions": "VGS = 4.5 V, ID = 0.7 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (P-Channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.708,+ "max": 0.85,+ "conditions": "VGS = -4.5 V, ID = -0.4 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (N-Channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.425,+ "max": 0.51,+ "conditions": "VGS = 2.7 V, ID = 0.4 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (P-Channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.13,+ "max": 1.35,+ "conditions": "VGS = -2.7 V, ID = -0.2 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (N-Channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.462,+ "max": 0.578,+ "conditions": "VGS = 2.5 V, ID = 0.4 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (P-Channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.23,+ "max": 1.48,+ "conditions": "VGS = -2.5 V, ID = -0.2 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (N-Channel)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 1.2,+ "max": 1.8,+ "conditions": "VDS = 10 V, VGS = 10 V, ID = 0.7 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (P-Channel)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 1.9,+ "max": 3,+ "conditions": "VDS = -10 V, VGS = -10 V, ID = -0.5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (N-Channel)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.55,+ "max": 1.1,+ "conditions": "VDS = 10 V, VGS = 4.5 V, ID = 0.5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (P-Channel)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.95,+ "max": 1.5,+ "conditions": "VDS = -10 V, VGS = -4.5 V, ID = -0.4 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance (N-Channel)",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 1.5,+ "typ": 7.2,+ "max": 14.4,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance (P-Channel)",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 2.1,+ "typ": 10.3,+ "max": 20.6,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time (N-Channel)",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 2,+ "max": 4,+ "conditions": "VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time (P-Channel)",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 2,+ "max": 4,+ "conditions": "VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Rise Time (N-Channel)",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 14,+ "max": 21,+ "conditions": "VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Rise Time (P-Channel)",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 9,+ "max": 18,+ "conditions": "VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time (N-Channel)",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 11,+ "max": 20,+ "conditions": "VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time (P-Channel)",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 10,+ "max": 20,+ "conditions": "VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Fall Time (N-Channel)",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 7,+ "max": 14,+ "conditions": "VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Fall Time (P-Channel)",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 7,+ "max": 14,+ "conditions": "VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time (N-Channel)",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 16,+ "max": 24,+ "conditions": "VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time (P-Channel)",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 15,+ "max": 23,+ "conditions": "VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Rise Time (N-Channel)",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 22,+ "max": 33,+ "conditions": "VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Rise Time (P-Channel)",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 15,+ "max": 23,+ "conditions": "VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time (N-Channel)",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 22,+ "max": 33,+ "conditions": "VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time (P-Channel)",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 12,+ "max": 20,+ "conditions": "VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Fall Time (N-Channel)",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 13,+ "max": 20,+ "conditions": "VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Fall Time (P-Channel)",+ "symbol": "tf",+ "kind": "timing",+ 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"source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time (N-Channel)",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 8,+ "max": 15,+ "conditions": "IF = 0.5 A, dI/dt = 100 A/μs, TJ = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time (P-Channel)",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 12,+ "max": 20,+ "conditions": "IF = -0.4 A, dI/dt = -100 A/μs, TJ = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -209,4 +924,4 @@ "visibility": { "public": true }-}+}