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SI1553CDL-T1-GE3

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Vishay Intertech MOSFETs, SC-70-6(SOT-363). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI1553CDL-T1-GE3

Vishay Intertech · MOSFETs · SC-70-6(SOT-363)

SI1553CDL-T1-GE3 from Vishay Intertech, in a SC-70-6(SOT-363). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (channel 1), rated for VDS 20 V and continuous drain current up to 0.7 A.
2 G1 input Gate of the N-channel MOSFET (channel 1), with a maximum gate-source voltage of ±12 V and a threshold of 0.6 to 1.5 V.
3 D2 passive Drain of the P-channel MOSFET (channel 2), rated for VDS -20 V and continuous drain current up to -0.5 A.
4 S2 passive Source of the P-channel MOSFET (channel 2), rated for VDS -20 V.
5 G2 input Gate of the P-channel MOSFET (channel 2), with a maximum gate-source voltage of ±12 V and a threshold of -0.6 to -1.5 V.
6 D1 passive Drain of the N-channel MOSFET (channel 1), rated for VDS 20 V and pulsed drain current of 2 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SC-70-6(SOT-363)
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Channel) VDS 20 V 1
Drain-Source Voltage (P-Channel) VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current, TC = 25 °C (N-Channel) ID 0.7 A TC = 25 °C 1
Continuous Drain Current, TC = 25 °C (P-Channel) ID -0.5 A TC = 25 °C 1
Continuous Drain Current, TA = 25 °C (N-Channel) ID 0.7 A TA = 25 °C 1
Continuous Drain Current, TA = 25 °C (P-Channel) ID -0.4 A TA = 25 °C 1
Source-Drain Current Diode Current (N-Channel) IS 0.3 A TC = 25 °C 1
Source-Drain Current Diode Current (P-Channel) IS -0.3 A TC = 25 °C 1
Pulsed Drain Current (N-Channel) IDM 2 A t = 300 μs 1
Pulsed Drain Current (P-Channel) IDM -1 A t = 300 μs 1
Maximum Power Dissipation, TC = 25 °C (N-Channel and P-Channel) PD 0.34 W TC = 25 °C 1
Maximum Power Dissipation, TA = 25 °C (N-Channel and P-Channel) PD 0.29 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient (N-Channel and P-Channel) RthJA 365 438 °C/W t ≤ 10 s 1
Maximum Junction-to-Foot (Drain) (N-Channel and P-Channel) RthJF 308 370 °C/W Steady State 1
Drain-Source Breakdown Voltage (N-Channel) VDS 20 V VGS = 0 V, ID = 250 μA 2
Drain-Source Breakdown Voltage (P-Channel) VDS -20 V VGS = 0 V, ID = -250 μA 2
Gate-Source Threshold Voltage (N-Channel) VGS(th) 0.6 1.5 V VDS = VGS, ID = 250 μA 2
Gate-Source Threshold Voltage (P-Channel) VGS(th) -0.6 -1.5 V VDS = VGS, ID = -250 μA 2
Gate-Source Leakage (N-Channel and P-Channel) IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
Zero Gate Voltage Drain Current (N-Channel) IDSS 1 μA VDS = 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (P-Channel) IDSS -1 μA VDS = -20 V, VGS = 0 V 2
On-State Drain Current (N-Channel) ID(on) 2 A VDS = 5 V, VGS = 5 V 2
On-State Drain Current (P-Channel) ID(on) -1 A VDS = -5 V, VGS = -5 V 2
Drain-Source On-State Resistance (N-Channel) RDS(on) 0.325 0.39 Ω VGS = 4.5 V, ID = 0.7 A 2
Drain-Source On-State Resistance (P-Channel) RDS(on) 0.708 0.85 Ω VGS = -4.5 V, ID = -0.4 A 2
Drain-Source On-State Resistance (N-Channel) RDS(on) 0.425 0.51 Ω VGS = 2.7 V, ID = 0.4 A 2
Drain-Source On-State Resistance (P-Channel) RDS(on) 1.13 1.35 Ω VGS = -2.7 V, ID = -0.2 A 2
Drain-Source On-State Resistance (N-Channel) RDS(on) 0.462 0.578 Ω VGS = 2.5 V, ID = 0.4 A 2
Drain-Source On-State Resistance (P-Channel) RDS(on) 1.23 1.48 Ω VGS = -2.5 V, ID = -0.2 A 2
Total Gate Charge (N-Channel) Qg 1.2 1.8 nC VDS = 10 V, VGS = 10 V, ID = 0.7 A 2
Total Gate Charge (P-Channel) Qg 1.9 3 nC VDS = -10 V, VGS = -10 V, ID = -0.5 A 2
Total Gate Charge (N-Channel) Qg 0.55 1.1 nC VDS = 10 V, VGS = 4.5 V, ID = 0.5 A 2
Total Gate Charge (P-Channel) Qg 0.95 1.5 nC VDS = -10 V, VGS = -4.5 V, ID = -0.4 A 2
Gate Resistance (N-Channel) Rg 1.5 7.2 14.4 Ω f = 1 MHz 2
Gate Resistance (P-Channel) Rg 2.1 10.3 20.6 Ω f = 1 MHz 2
Turn-On Delay Time (N-Channel) td(on) 2 4 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω 3
Turn-On Delay Time (P-Channel) td(on) 2 4 ns VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω 3
Rise Time (N-Channel) tr 14 21 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω 3
Rise Time (P-Channel) tr 9 18 ns VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω 3
Turn-Off Delay Time (N-Channel) td(off) 11 20 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω 3
Turn-Off Delay Time (P-Channel) td(off) 10 20 ns VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω 3
Fall Time (N-Channel) tf 7 14 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω 3
Fall Time (P-Channel) tf 7 14 ns VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω 3
Turn-On Delay Time (N-Channel) td(on) 16 24 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω 3
Turn-On Delay Time (P-Channel) td(on) 15 23 ns VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω 3
Rise Time (N-Channel) tr 22 33 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω 3
Rise Time (P-Channel) tr 15 23 ns VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω 3
Turn-Off Delay Time (N-Channel) td(off) 22 33 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω 3
Turn-Off Delay Time (P-Channel) td(off) 12 20 ns VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω 3
Fall Time (N-Channel) tf 13 20 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω 3
Fall Time (P-Channel) tf 8 16 ns VDD = -10 V, RL = 25 Ω, ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω 3
Pulse Diode Forward Current (N-Channel) ISM 2 A 3
Pulse Diode Forward Current (P-Channel) ISM -1 A 3
Body Diode Voltage (N-Channel) VSD 0.8 1.2 V IS = 0.5 A 3
Body Diode Voltage (P-Channel) VSD -0.8 -1.2 V IS = -0.4 A 3
Body Diode Reverse Recovery Time (N-Channel) trr 8 15 ns IF = 0.5 A, dI/dt = 100 A/μs, TJ = 25 °C 3
Body Diode Reverse Recovery Time (P-Channel) trr 12 20 ns IF = -0.4 A, dI/dt = -100 A/μs, TJ = 25 °C 3

CAD (KiCad official)

  • Symbol: SI1553CDL-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SC-70-6(SOT-363) (KiCad packages3D, STEP)
  • 3D model files: si1553cdl-t1-ge3-etched.step / si1553cdl-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si1553cdl-t1-ge3.step / si1553cdl-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (16 pp, sha256 8f1b800527a12550, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF