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RS3E130ATTB1

ROHM Semicon · MOSFETs · SOP-8

RS3E130ATTB1 from ROHM Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Source	passive	MOSFET source terminal, tied internally with pins 2 and 3; body diode anode side of the P-channel device (VDSS -30V, ID ±13A).
2	Source	passive	MOSFET source terminal, tied internally with pins 1 and 3; carries continuous drain current up to ±13A for the package.
3	Source	passive	MOSFET source terminal, tied internally with pins 1 and 2; body diode continuous forward current is -1.67A.
4	Gate	input	MOSFET gate input with gate-source voltage limit of ±20V and threshold of -1.0V to -2.5V at ID = -2mA.
5	Drain	passive	MOSFET drain terminal, tied internally with pins 6, 7 and 8; VDSS -30V, RDS(on) max 8.5mΩ at VGS = -10V.
6	Drain	passive	MOSFET drain terminal, tied internally with pins 5, 7 and 8; pulsed drain current up to ±52A.
7	Drain	passive	MOSFET drain terminal, tied internally with pins 5, 6 and 8; drain-source voltage rating of -30V.
8	Drain	passive	MOSFET drain terminal, tied internally with pins 5, 6 and 7; power dissipation 2.0W on a ceramic board.

Key specifications

Parameter	Value
Manufacturer	ROHM Semicon
Package	SOP-8
Category	Triode/MOS Tube/Transistor
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source voltage	VDSS			-30	V	Ta = 25°C	1
Continuous drain current	ID	-13		13	A	Ta = 25°C	1
Pulsed drain current	IDP	-52		52	A	Pw ≤ 10μs, Duty cycle ≤ 1%	1
Gate-Source voltage	VGSS	-20		20	V	Ta = 25°C	1
Avalanche current, single pulse	IAS			-13	A	L ≃ 0.5mH, VDD = -15V, RG = 25Ω, Starting Tj = 25℃	1
Avalanche energy, single pulse	EAS			42	mJ	L ≃ 0.5mH, VDD = -15V, RG = 25Ω, Starting Tj = 25℃	1
Power dissipation (ceramic board)	PD			2	W	Mounted on a ceramic board (30×30×0.8mm)	1
Power dissipation (Cu board)	PD			1.4	W	Mounted on a Cu board (40×40×0.8mm)	1
Junction temperature	Tj			150	℃		1
Operating junction and storage temperature range	Tstg	-55		150	℃		1
Thermal resistance, junction-ambient (ceramic board)	RthJA			62.5	℃/W	Mounted on a ceramic board (30×30×0.8mm)	2
Thermal resistance, junction-ambient (Cu board)	RthJA			89.2	℃/W	Mounted on a Cu board (40×40×0.8mm)	2
Drain-Source breakdown voltage	V(BR)DSS	-30			V	VGS = 0V, ID = -1mA	2
Breakdown voltage temperature coefficient	ΔV(BR)DSS/ΔTj		-22		mV/℃	ID = -1mA referenced to 25℃	2
Zero gate voltage drain current	IDSS			-1	μA	VDS = -30V, VGS = 0V	2
Gate-Source leakage current	IGSS	-500		500	nA	VGS = ±20V, VDS = 0V	2
Gate threshold voltage	VGS(th)	-1		-2.5	V	VDS = VGS, ID = -2mA	2
Gate threshold voltage temperature coefficient	ΔVGS(th)/ΔTj		2.9		mV/℃	ID = -1mA referenced to 25℃	2
Static drain-source on-state resistance	RDS(on)		6.5	8.5	mΩ	VGS = -10V, ID = -13A, pulsed	2
Static drain-source on-state resistance	RDS(on)		8.6	11.2	mΩ	VGS = -4.5V, ID = -13A, pulsed	2
Gate resistance	RG		6		Ω	f = 1MHz, open drain	2
Forward transfer admittance	/Yfs/	21			S	VDS = -5V, ID = -13A, pulsed	2
Input capacitance	Ciss		3730		pF	VGS = 0V, VDS = -15V, f = 1MHz	3
Output capacitance	Coss		680		pF	VGS = 0V, VDS = -15V, f = 1MHz	3
Reverse transfer capacitance	Crss		530		pF	VGS = 0V, VDS = -15V, f = 1MHz	3
Turn-on delay time	td(on)		17		ns	VDD ≃ -15V, VGS = -10V, ID = -6.5A, RL ≃ 2.3Ω, RG = 10Ω	3
Rise time	tr		25		ns	VDD ≃ -15V, VGS = -10V, ID = -6.5A, RL ≃ 2.3Ω, RG = 10Ω	3
Turn-off delay time	td(off)		200		ns	VDD ≃ -15V, VGS = -10V, ID = -6.5A, RL ≃ 2.3Ω, RG = 10Ω	3
Fall time	tf		165		ns	VDD ≃ -15V, VGS = -10V, ID = -6.5A, RL ≃ 2.3Ω, RG = 10Ω	3
Total gate charge	Qg		83		nC	VDD ≃ -15V, ID = -13A, VGS = -10V	3
Total gate charge	Qg		42		nC	VDD ≃ -15V, ID = -13A, VGS = -4.5V	3
Gate-Source charge	Qgs		12.6		nC	VDD ≃ -15V, ID = -13A	3
Gate-Drain charge	Qgd		15.7		nC	VDD ≃ -15V, ID = -13A	3
Body diode continuous forward current	IS			-1.67	A	Ta = 25℃	3
Body diode pulse forward current	ISP			-52	A	Pw ≤ 10μs, Duty cycle ≤ 1%	3
Body diode forward voltage	VSD			-1.2	V	VGS = 0V, IS = -1.67A, pulsed	3

CAD (KiCad official)

Symbol: RS3E130ATTB1
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SOP-8 (KiCad packages3D, STEP)
3D model files: rs3e130attb1-etched.step / rs3e130attb1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs3e130attb1.step / rs3e130attb1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: ROHM Semicon datasheet (14 pp, sha256 09c3023afc20d04c, retrieved 2026-10-23, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF