main
Ray Set visibility: public acec1ac 15d ago
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{
  "schema_version": 1,
  "type": "component",
  "slug": "rs3e130attb1",
  "title": "RS3E130ATTB1",
  "brief": "ROHM Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "triode-mos tube-transistor",
    "rs3e130attb1",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "RS3E130ATTB1",
    "manufacturer": "ROHM Semicon",
    "package": "SOP-8",
    "pin_count": 8,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/a865b5e1e14b4e9a95d4e3a9f24d7bd0.pdf",
    "parts": {
      "symbol": "rs3e130attb1.kicad_sym",
      "footprint": "rs3e130attb1.kicad_mod",
      "model_3d": "rs3e130attb1-hero.glb",
      "model_3d_plain": "rs3e130attb1-etched.glb",
      "model_3d_step": "rs3e130attb1-etched.step",
      "model_3d_step_plain": "rs3e130attb1.step",
      "lbr": "rs3e130attb1.lbr"
    },
    "distributor_links": {
      "lcsc": "C3280000",
      "digikey": "846-RS3E130ATTB1TR-ND",
      "mouser": "755-RS3E130ATTB1"
    },
    "distributor_check": {
      "checked_at": "2026-10-23T12:18:52Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "846-RS3E130ATTB1TR-ND",
        "status": "found",
        "lifecycle": "Active"
      },
      "mouser": {
        "pn": "755-RS3E130ATTB1",
        "status": "found"
      }
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        "type": "passive",
        "description": "MOSFET source terminal, tied internally with pins 2 and 3; body diode anode side of the P-channel device (VDSS -30V, ID ±13A)."
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        "number": "2",
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        "type": "passive",
        "description": "MOSFET source terminal, tied internally with pins 1 and 3; carries continuous drain current up to ±13A for the package."
      },
      {
        "number": "3",
        "name": "Source",
        "type": "passive",
        "description": "MOSFET source terminal, tied internally with pins 1 and 2; body diode continuous forward current is -1.67A."
      },
      {
        "number": "4",
        "name": "Gate",
        "type": "input",
        "description": "MOSFET gate input with gate-source voltage limit of ±20V and threshold of -1.0V to -2.5V at ID = -2mA."
      },
      {
        "number": "5",
        "name": "Drain",
        "type": "passive",
        "description": "MOSFET drain terminal, tied internally with pins 6, 7 and 8; VDSS -30V, RDS(on) max 8.5mΩ at VGS = -10V."
      },
      {
        "number": "6",
        "name": "Drain",
        "type": "passive",
        "description": "MOSFET drain terminal, tied internally with pins 5, 7 and 8; pulsed drain current up to ±52A."
      },
      {
        "number": "7",
        "name": "Drain",
        "type": "passive",
        "description": "MOSFET drain terminal, tied internally with pins 5, 6 and 8; drain-source voltage rating of -30V."
      },
      {
        "number": "8",
        "name": "Drain",
        "type": "passive",
        "description": "MOSFET drain terminal, tied internally with pins 5, 6 and 7; power dissipation 2.0W on a ceramic board."
      }
    ],
    "provenance": {
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        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
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        "pages_sent": 14,
        "cost_usd": 0.3211,
        "at": "2026-10-23T12:18:41"
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        "pages": 14,
        "sha256": "09c3023afc20d04c",
        "source_tier": "mfr"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
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        "described": 8,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "sha256": "07f46cff378d30e6c27dfd5a03092c795323f86d91c71fc7e743f4f418dc553a",
        "checked": "2026-10-23",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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  "metadata": {
    "specs": {
      "Manufacturer": "ROHM Semicon",
      "Package": "SOP-8",
      "Category": "Triode/MOS Tube/Transistor",
      "Pins": "8"
    },
    "characteristics": {
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          "max": -30,
          "conditions": "Ta = 25°C",
          "source_page": 1,
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          "kind": "absolute_maximum",
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          "conditions": "Ta = 25°C",
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          "source": "datasheet"
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          "unit": "A",
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          "typ": null,
          "max": -13,
          "conditions": "L ≃ 0.5mH, VDD = -15V, RG = 25Ω, Starting Tj = 25℃",
          "source_page": 1,
          "source": "datasheet"
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          "name": "Avalanche energy, single pulse",
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          "conditions": "L ≃ 0.5mH, VDD = -15V, RG = 25Ω, Starting Tj = 25℃",
          "source_page": 1,
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          "name": "Power dissipation (ceramic board)",
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          "conditions": "Mounted on a ceramic board (30×30×0.8mm)",
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          "name": "Power dissipation (Cu board)",
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          "max": 1.4,
          "conditions": "Mounted on a Cu board (40×40×0.8mm)",
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        {
          "name": "Junction temperature",
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        {
          "name": "Operating junction and storage temperature range",
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          "unit": "℃",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
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        },
        {
          "name": "Thermal resistance, junction-ambient (ceramic board)",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": null,
          "max": 62.5,
          "conditions": "Mounted on a ceramic board (30×30×0.8mm)",
          "source_page": 2,
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          "name": "Thermal resistance, junction-ambient (Cu board)",
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          "kind": "thermal",
          "unit": "℃/W",
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        },
        {
          "name": "Drain-Source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": -30,
          "typ": null,
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          "conditions": "VGS = 0V, ID = -1mA",
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          "source": "datasheet"
        },
        {
          "name": "Breakdown voltage temperature coefficient",
          "symbol": "ΔV(BR)DSS/ΔTj",
          "kind": "temperature_coefficient",
          "unit": "mV/℃",
          "min": null,
          "typ": -22,
          "max": null,
          "conditions": "ID = -1mA referenced to 25℃",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Zero gate voltage drain current",
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          "kind": "electrical",
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          "max": -1,
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          "name": "Gate-Source leakage current",
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          "name": "Gate threshold voltage",
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          "max": -2.5,
          "conditions": "VDS = VGS, ID = -2mA",
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        {
          "name": "Gate threshold voltage temperature coefficient",
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          "min": null,
          "typ": 2.9,
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          "conditions": "ID = -1mA referenced to 25℃",
          "source_page": 2,
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        {
          "name": "Static drain-source on-state resistance",
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          "conditions": "VGS = -10V, ID = -13A, pulsed",
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          "conditions": "VGS = -4.5V, ID = -13A, pulsed",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Gate resistance",
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          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 6,
          "max": null,
          "conditions": "f = 1MHz, open drain",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Forward transfer admittance",
          "symbol": "|Yfs|",
          "kind": "electrical",
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          "min": 21,
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          "conditions": "VDS = -5V, ID = -13A, pulsed",
          "source_page": 2,
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        {
          "name": "Input capacitance",
          "symbol": "Ciss",
          "kind": "electrical",
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          "max": null,
          "conditions": "VGS = 0V, VDS = -15V, f = 1MHz",
          "source_page": 3,
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        {
          "name": "Output capacitance",
          "symbol": "Coss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
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          "conditions": "VGS = 0V, VDS = -15V, f = 1MHz",
          "source_page": 3,
          "source": "datasheet"
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        {
          "name": "Reverse transfer capacitance",
          "symbol": "Crss",
          "kind": "electrical",
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          "min": null,
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          "conditions": "VGS = 0V, VDS = -15V, f = 1MHz",
          "source_page": 3,
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        {
          "name": "Turn-on delay time",
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          "min": null,
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          "max": null,
          "conditions": "VDD ≃ -15V, VGS = -10V, ID = -6.5A, RL ≃ 2.3Ω, RG = 10Ω",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Rise time",
          "symbol": "tr",
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          "conditions": "VDD ≃ -15V, VGS = -10V, ID = -6.5A, RL ≃ 2.3Ω, RG = 10Ω",
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          "name": "Turn-off delay time",
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        {
          "name": "Total gate charge",
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          "kind": "electrical",
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          "min": null,
          "typ": 83,
          "max": null,
          "conditions": "VDD ≃ -15V, ID = -13A, VGS = -10V",
          "source_page": 3,
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        {
          "name": "Total gate charge",
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          "max": null,
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          "conditions": "VDD ≃ -15V, ID = -13A",
          "source_page": 3,
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          "conditions": "VDD ≃ -15V, ID = -13A",
          "source_page": 3,
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          "conditions": "Ta = 25℃",
          "source_page": 3,
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          "conditions": "Pw ≤ 10μs, Duty cycle ≤ 1%",
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          "max": -1.2,
          "conditions": "VGS = 0V, IS = -1.67A, pulsed",
          "source_page": 3,
          "source": "datasheet"
        }
      ]
    }
  },
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  "discovery_triggers": [
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  "discovery_pitch": "RS3E130ATTB1 (ROHM Semicon) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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