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Ray pmv30un2r: specified limits as data (metadata.characteristics, 29 rows from the datasheet) 4312363 17d ago

PMV30UN2R

Nexperia · MOSFETs · SOT-23

PMV30UN2R from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel Trench MOSFET; the gate-source voltage is rated -12 V to 12 V (Table 5).
2 S passive Source terminal of the MOSFET; the source-drain diode source current is rated at 0.9 A at Tamb = 25 °C (Table 5).
3 D passive Drain terminal of the MOSFET; the drain-source voltage is rated 20 V maximum and the drain current 5.4 A maximum at VGS = 4.5 V, Tamb = 25 °C, t ≤ 5 s (Table 5).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 20 V 3
Gate-source voltage VGS -12 12 V Tj = 25 °C 3
Drain current ID 5.4 A VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] 3
Drain current ID 4.2 A VGS = 4.5 V; Tamb = 25 °C [1] 3
Drain current ID 2.7 A VGS = 4.5 V; Tamb = 100 °C [1] 3
Peak drain current IDM 18 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
Total power dissipation Ptot 490 mW Tamb = 25 °C [2] 3
Total power dissipation Ptot 1000 mW [1] 3
Total power dissipation Ptot 5000 mW Tsp = 25 °C 3
Junction temperature Tj -55 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Source current (source-drain diode) IS 0.9 A Tamb = 25 °C [1] 3
Thermal resistance from junction to ambient Rth(j-a) 217 255 K/W in free air [1]; [1] FR4 PCB, single-sided copper, tin-plated, standard footprint 4
Thermal resistance from junction to ambient Rth(j-a) 105 124 K/W [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2 4
Thermal resistance from junction to ambient Rth(j-a) 73 86 K/W t ≤ 5 s [2] 4
Thermal resistance from junction to solder point Rth(j-sp) 20 25 K/W 5
Drain-source breakdown voltage V(BR)DSS 20 V ID = 250 µA; VGS = 0 V; Tj = 25 °C 6
Gate-source threshold voltage VGSth 0.4 0.65 0.9 V ID = 250 µA; VDS = VGS; Tj = 25 °C 6
Drain leakage current IDSS 1 µA VDS = 20 V; VGS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 100 nA VGS = 12 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -100 nA VGS = -12 V; VDS = 0 V; Tj = 25 °C 6
Drain-source on-state resistance RDSon 24 32 mΩ VGS = 4.5 V; ID = 4.2 A; Tj = 25 °C 6
Drain-source on-state resistance RDSon 37 50 mΩ VGS = 4.5 V; ID = 4.2 A; Tj = 150 °C 6
Drain-source on-state resistance RDSon 30 43 mΩ VGS = 2.5 V; ID = 3.7 A; Tj = 25 °C 6
Drain-source on-state resistance RDSon 40 59 mΩ VGS = 1.8 V; ID = 1.0 A; Tj = 25 °C 6
Drain-source on-state resistance RDSon 56 100 mΩ VGS = 1.5 V; ID = 0.1 A; Tj = 25 °C 6
Total gate charge QG(tot) 6.2 11 nC VDS = 10 V; ID = 4.2 A; VGS = 4.5 V; Tj = 25 °C (shared test block) 6
Source-drain voltage VSD 0.7 1.2 V IS = 0.9 A; VGS = 0 V; Tj = 25 °C 6

CAD (KiCad official)

  • Symbol: PMV30UN2R
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pmv30un2r-etched.step / pmv30un2r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmv30un2r.step / pmv30un2r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (15 pp, sha256 d74a8cbfb67de8bc, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF