component
PMV30UN2R
Public Made by Adomby adom
Nexperia MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPMV30UN2R
Nexperia · MOSFETs · SOT-23
PMV30UN2R from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel Trench MOSFET; the gate-source voltage is rated -12 V to 12 V (Table 5). |
| 2 | S | passive | Source terminal of the MOSFET; the source-drain diode source current is rated at 0.9 A at Tamb = 25 °C (Table 5). |
| 3 | D | passive | Drain terminal of the MOSFET; the drain-source voltage is rated 20 V maximum and the drain current 5.4 A maximum at VGS = 4.5 V, Tamb = 25 °C, t ≤ 5 s (Table 5). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 20 | V | 3 | |||
| Gate-source voltage | VGS | -12 | 12 | V | Tj = 25 °C | 3 | |
| Drain current | ID | 5.4 | A | VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] | 3 | ||
| Drain current | ID | 4.2 | A | VGS = 4.5 V; Tamb = 25 °C [1] | 3 | ||
| Drain current | ID | 2.7 | A | VGS = 4.5 V; Tamb = 100 °C [1] | 3 | ||
| Peak drain current | IDM | 18 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 | ||
| Total power dissipation | Ptot | 490 | mW | Tamb = 25 °C [2] | 3 | ||
| Total power dissipation | Ptot | 1000 | mW | [1] | 3 | ||
| Total power dissipation | Ptot | 5000 | mW | Tsp = 25 °C | 3 | ||
| Junction temperature | Tj | -55 | 150 | °C | 3 | ||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Source current (source-drain diode) | IS | 0.9 | A | Tamb = 25 °C [1] | 3 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 217 | 255 | K/W | in free air [1]; [1] FR4 PCB, single-sided copper, tin-plated, standard footprint | 4 | |
| Thermal resistance from junction to ambient | Rth(j-a) | 105 | 124 | K/W | [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2 | 4 | |
| Thermal resistance from junction to ambient | Rth(j-a) | 73 | 86 | K/W | t ≤ 5 s [2] | 4 | |
| Thermal resistance from junction to solder point | Rth(j-sp) | 20 | 25 | K/W | 5 | ||
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 | ||
| Gate-source threshold voltage | VGSth | 0.4 | 0.65 | 0.9 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | 1 | µA | VDS = 20 V; VGS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | 100 | nA | VGS = 12 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | -100 | nA | VGS = -12 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Drain-source on-state resistance | RDSon | 24 | 32 | mΩ | VGS = 4.5 V; ID = 4.2 A; Tj = 25 °C | 6 | |
| Drain-source on-state resistance | RDSon | 37 | 50 | mΩ | VGS = 4.5 V; ID = 4.2 A; Tj = 150 °C | 6 | |
| Drain-source on-state resistance | RDSon | 30 | 43 | mΩ | VGS = 2.5 V; ID = 3.7 A; Tj = 25 °C | 6 | |
| Drain-source on-state resistance | RDSon | 40 | 59 | mΩ | VGS = 1.8 V; ID = 1.0 A; Tj = 25 °C | 6 | |
| Drain-source on-state resistance | RDSon | 56 | 100 | mΩ | VGS = 1.5 V; ID = 0.1 A; Tj = 25 °C | 6 | |
| Total gate charge | QG(tot) | 6.2 | 11 | nC | VDS = 10 V; ID = 4.2 A; VGS = 4.5 V; Tj = 25 °C (shared test block) | 6 | |
| Source-drain voltage | VSD | 0.7 | 1.2 | V | IS = 0.9 A; VGS = 0 V; Tj = 25 °C | 6 |
CAD (KiCad official)
- Symbol:
PMV30UN2R - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pmv30un2r-etched.step/pmv30un2r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pmv30un2r.step/pmv30un2r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (15 pp, sha256
d74a8cbfb67de8bc, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).