component
PMV30UN2R
Public Made by Adomby adom
Nexperia MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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pmv30un2r: specified limits as data (metadata.characteristics, 29 rows from the datasheet)
2 files changed
+392−1
README.md+36@@ -21,6 +21,42 @@ PMV30UN2R from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDS | | | 20 | V | | 3 |+| Gate-source voltage | VGS | -12 | | 12 | V | Tj = 25 °C | 3 |+| Drain current | ID | | | 5.4 | A | VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] | 3 |+| Drain current | ID | | | 4.2 | A | VGS = 4.5 V; Tamb = 25 °C [1] | 3 |+| Drain current | ID | | | 2.7 | A | VGS = 4.5 V; Tamb = 100 °C [1] | 3 |+| Peak drain current | IDM | | | 18 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 |+| Total power dissipation | Ptot | | | 490 | mW | Tamb = 25 °C [2] | 3 |+| Total power dissipation | Ptot | | | 1000 | mW | [1] | 3 |+| Total power dissipation | Ptot | | | 5000 | mW | Tsp = 25 °C | 3 |+| Junction temperature | Tj | -55 | | 150 | °C | | 3 |+| Ambient temperature | Tamb | -55 | | 150 | °C | | 3 |+| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |+| Source current (source-drain diode) | IS | | | 0.9 | A | Tamb = 25 °C [1] | 3 |+| Thermal resistance from junction to ambient | Rth(j-a) | | 217 | 255 | K/W | in free air [1]; [1] FR4 PCB, single-sided copper, tin-plated, standard footprint | 4 |+| Thermal resistance from junction to ambient | Rth(j-a) | | 105 | 124 | K/W | [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2 | 4 |+| Thermal resistance from junction to ambient | Rth(j-a) | | 73 | 86 | K/W | t ≤ 5 s [2] | 4 |+| Thermal resistance from junction to solder point | Rth(j-sp) | | 20 | 25 | K/W | | 5 |+| Drain-source breakdown voltage | V(BR)DSS | 20 | | | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 |+| Gate-source threshold voltage | VGSth | 0.4 | 0.65 | 0.9 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |+| Drain leakage current | IDSS | | | 1 | µA | VDS = 20 V; VGS = 0 V; Tj = 25 °C | 6 |+| Gate leakage current | IGSS | | | 100 | nA | VGS = 12 V; VDS = 0 V; Tj = 25 °C | 6 |+| Gate leakage current | IGSS | | | -100 | nA | VGS = -12 V; VDS = 0 V; Tj = 25 °C | 6 |+| Drain-source on-state resistance | RDSon | | 24 | 32 | mΩ | VGS = 4.5 V; ID = 4.2 A; Tj = 25 °C | 6 |+| Drain-source on-state resistance | RDSon | | 37 | 50 | mΩ | VGS = 4.5 V; ID = 4.2 A; Tj = 150 °C | 6 |+| Drain-source on-state resistance | RDSon | | 30 | 43 | mΩ | VGS = 2.5 V; ID = 3.7 A; Tj = 25 °C | 6 |+| Drain-source on-state resistance | RDSon | | 40 | 59 | mΩ | VGS = 1.8 V; ID = 1.0 A; Tj = 25 °C | 6 |+| Drain-source on-state resistance | RDSon | | 56 | 100 | mΩ | VGS = 1.5 V; ID = 0.1 A; Tj = 25 °C | 6 |+| Total gate charge | QG(tot) | | 6.2 | 11 | nC | VDS = 10 V; ID = 4.2 A; VGS = 4.5 V; Tj = 25 °C (shared test block) | 6 |+| Source-drain voltage | VSD | | 0.7 | 1.2 | V | IS = 0.9 A; VGS = 0 V; Tj = 25 °C | 6 |+ ## CAD (KiCad official) - Symbol: `PMV30UN2R`
page.json+356−1@@ -149,6 +149,361 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "d74a8cbfb67de8bc",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5.4,+ "conditions": "VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4.2,+ "conditions": "VGS = 4.5 V; Tamb = 25 °C [1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.7,+ "conditions": "VGS = 4.5 V; Tamb = 100 °C [1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Peak drain current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 18,+ "conditions": "Tamb = 25 °C; single pulse; tp ≤ 10 µs",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 490,+ "conditions": "Tamb = 25 °C [2]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 1000,+ "conditions": "[1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 5000,+ "conditions": "Tsp = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Junction temperature",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Ambient temperature",+ "symbol": "Tamb",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -65,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Source current (source-drain diode)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.9,+ "conditions": "Tamb = 25 °C [1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance from junction to ambient",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": 217,+ "max": 255,+ "conditions": "in free air [1]; [1] FR4 PCB, single-sided copper, tin-plated, standard footprint",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance from junction to ambient",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": 105,+ "max": 124,+ "conditions": "[2] FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance from junction to ambient",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": 73,+ "max": 86,+ "conditions": "t ≤ 5 s [2]",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance from junction to solder point",+ "symbol": "Rth(j-sp)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": 20,+ "max": 25,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "ID = 250 µA; VGS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate-source threshold voltage",+ "symbol": "VGSth",+ "kind": "electrical",+ "unit": "V",+ "min": 0.4,+ "typ": 0.65,+ "max": 0.9,+ "conditions": "ID = 250 µA; VDS = VGS; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Drain leakage current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 20 V; VGS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 12 V; VDS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VGS = -12 V; VDS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDSon",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 24,+ "max": 32,+ "conditions": "VGS = 4.5 V; ID = 4.2 A; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDSon",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 37,+ "max": 50,+ "conditions": "VGS = 4.5 V; ID = 4.2 A; Tj = 150 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDSon",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 30,+ "max": 43,+ "conditions": "VGS = 2.5 V; ID = 3.7 A; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDSon",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 40,+ "max": 59,+ "conditions": "VGS = 1.8 V; ID = 1.0 A; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDSon",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 56,+ "max": 100,+ "conditions": "VGS = 1.5 V; ID = 0.1 A; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "QG(tot)",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 6.2,+ "max": 11,+ "conditions": "VDS = 10 V; ID = 4.2 A; VGS = 4.5 V; Tj = 25 °C (shared test block)",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Source-drain voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.7,+ "max": 1.2,+ "conditions": "IS = 0.9 A; VGS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +545,4 @@ "visibility": { "public": true }-}+}