PMV20XNER

{
  "schema_version": 1,
  "type": "component",
  "slug": "pmv20xner",
  "title": "PMV20XNER",
  "brief": "Nexperia MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "transistors-thyristors",
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  "component": {
    "mpn": "PMV20XNER",
    "manufacturer": "Nexperia",
    "package": "SOT-23",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885368883564545",
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      "footprint": "pmv20xner.kicad_mod",
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      "lbr": "pmv20xner.lbr"
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    "distributor_links": {
      "lcsc": "C553085",
      "digikey": "1727-2302-2-ND",
      "mouser": "771-PMV20XNER"
    },
    "distributor_check": {
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      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "1727-2302-2-ND",
        "status": "found"
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      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate terminal of the MOSFET; the datasheet limits gate-source voltage VGS to -12 V to 12 V."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the MOSFET; source current IS is rated at 1.2 A at Tamb = 25 °C."
      },
      {
        "number": "3",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the MOSFET; drain-source voltage VDS is rated at 30 V maximum, and drain current ID is rated at 7.2 A (VGS = 4.5 V, Tamb = 25 °C, t ≤ 5 s)."
      }
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        "guard_notes": [
          "extractor flagged: The MPN requested is PMV20XNER, but the datasheet covers only PMV20XNE. The 'R' suffix is not define"
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        "at": "2026-10-09T14:51:59"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
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        "described": 3,
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        "refuses_to_fabricate": true
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        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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          3,
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "dd5d1711204e1d8d26cd11490923bd84340820baa69538c385a4300ec2539bc0",
        "checked": "2026-10-09",
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "Nexperia",
      "Package": "SOT-23",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
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          "conditions": "",
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        },
        {
          "name": "Gate-source voltage",
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          "min": -12,
          "typ": null,
          "max": 12,
          "conditions": "Tj = 25 °C",
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        },
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          "name": "Drain current",
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          "name": "Drain current",
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          "name": "Drain current",
          "symbol": "ID",
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          "min": null,
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          "conditions": "VGS = 4.5 V; Tamb = 100 °C [1]",
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        {
          "name": "Peak drain current",
          "symbol": "IDM",
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          "typ": null,
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          "conditions": "Tamb = 25 °C; single pulse; tp ≤ 10 µs",
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          "name": "Total power dissipation",
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          "kind": "absolute_maximum",
          "unit": "mW",
          "min": null,
          "typ": null,
          "max": 510,
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          "unit": "mW",
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          "typ": null,
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          "typ": null,
          "max": 6940,
          "conditions": "Tsp = 25 °C",
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        {
          "name": "Junction temperature",
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        {
          "name": "Ambient temperature",
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        },
        {
          "name": "Storage temperature",
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          "unit": "°C",
          "min": -65,
          "typ": null,
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          "conditions": "",
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        },
        {
          "name": "Source current (source-drain diode)",
          "symbol": "IS",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 1.2,
          "conditions": "Tamb = 25 °C [1]",
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        },
        {
          "name": "Thermal resistance junction to solder point",
          "symbol": "Rth(j-sp)",
          "kind": "thermal",
          "unit": "K/W",
          "min": null,
          "typ": 13,
          "max": 18,
          "conditions": "",
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        },
        {
          "name": "Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 30,
          "typ": null,
          "max": null,
          "conditions": "ID = 250 µA; VGS = 0 V; Tj = 25 °C",
          "source_page": 6,
          "source": "datasheet"
        },
        {
          "name": "Gate-source threshold voltage",
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          "kind": "electrical",
          "unit": "V",
          "min": 0.4,
          "typ": 0.65,
          "max": 0.9,
          "conditions": "ID = 250 µA; VDS = VGS; Tj = 25 °C",
          "source_page": 6,
          "source": "datasheet"
        },
        {
          "name": "Drain leakage current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS = 30 V; VGS = 0 V; Tj = 25 °C",
          "source_page": 6,
          "source": "datasheet"
        },
        {
          "name": "Gate leakage current (positive)",
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          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 10,
          "conditions": "VGS = 8 V; VDS = 0 V; Tj = 25 °C",
          "source_page": 6,
          "source": "datasheet"
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        {
          "name": "Gate leakage current (negative)",
          "symbol": "IGSS",
          "kind": "electrical",
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          "min": null,
          "typ": null,
          "max": -10,
          "conditions": "VGS = -8 V; VDS = 0 V; Tj = 25 °C",
          "source_page": 6,
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        },
        {
          "name": "Drain-source on-state resistance",
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          "kind": "electrical",
          "unit": "mΩ",
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          "typ": 19,
          "max": 23,
          "conditions": "VGS = 4.5 V; ID = 5.7 A; Tj = 25 °C",
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          "source": "datasheet"
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          "name": "Drain-source on-state resistance",
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          "unit": "mΩ",
          "min": null,
          "typ": 31,
          "max": 37,
          "conditions": "VGS = 4.5 V; ID = 5.7 A; Tj = 150 °C",
          "source_page": 6,
          "source": "datasheet"
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          "name": "Drain-source on-state resistance",
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          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 22,
          "max": 30,
          "conditions": "VGS = 2.5 V; ID = 5 A; Tj = 25 °C",
          "source_page": 6,
          "source": "datasheet"
        },
        {
          "name": "Drain-source on-state resistance",
          "symbol": "RDSon",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 27,
          "max": 38,
          "conditions": "VGS = 1.8 V; ID = 1.9 A; Tj = 25 °C",
          "source_page": 6,
          "source": "datasheet"
        },
        {
          "name": "Total gate charge",
          "symbol": "QG(tot)",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 12.4,
          "max": 18.6,
          "conditions": "VDS = 10 V; ID = 5 A; VGS = 4.5 V; Tj = 25 °C (shared printed condition block for QG(tot), QGS, QGD)",
          "source_page": 6,
          "source": "datasheet"
        },
        {
          "name": "Source-drain voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 0.7,
          "max": 1.2,
          "conditions": "IS = 1.2 A; VGS = 0 V; Tj = 25 °C",
          "source_page": 6,
          "source": "datasheet"
        }
      ]
    }
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  "discovery_pitch": "PMV20XNER (Nexperia) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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