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PMV20XNER

Public Made by Adom

by adom

Nexperia MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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README.md pmv20xner: specified limits as data (metadata.characteristics, 25 rows from the datasheet) · Ray 16d ago

PMV20XNER

Nexperia · MOSFETs · SOT-23

PMV20XNER from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the MOSFET; the datasheet limits gate-source voltage VGS to -12 V to 12 V.
2 S passive Source terminal of the MOSFET; source current IS is rated at 1.2 A at Tamb = 25 °C.
3 D passive Drain terminal of the MOSFET; drain-source voltage VDS is rated at 30 V maximum, and drain current ID is rated at 7.2 A (VGS = 4.5 V, Tamb = 25 °C, t ≤ 5 s).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 30 V 3
Gate-source voltage VGS -12 12 V Tj = 25 °C 3
Drain current ID 7.2 A VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] 3
Drain current ID 5.7 A VGS = 4.5 V; Tamb = 25 °C [1] 3
Drain current ID 3.6 A VGS = 4.5 V; Tamb = 100 °C [1] 3
Peak drain current IDM 24 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
Total power dissipation Ptot 510 mW Tamb = 25 °C [2] (standard footprint) 3
Total power dissipation Ptot 1200 mW Tamb = 25 °C [1] (mounting pad for drain 6 cm2) 3
Total power dissipation Ptot 6940 mW Tsp = 25 °C 3
Junction temperature Tj -55 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Source current (source-drain diode) IS 1.2 A Tamb = 25 °C [1] 3
Thermal resistance junction to solder point Rth(j-sp) 13 18 K/W 5
Drain-source breakdown voltage V(BR)DSS 30 V ID = 250 µA; VGS = 0 V; Tj = 25 °C 6
Gate-source threshold voltage VGSth 0.4 0.65 0.9 V ID = 250 µA; VDS = VGS; Tj = 25 °C 6
Drain leakage current IDSS 1 µA VDS = 30 V; VGS = 0 V; Tj = 25 °C 6
Gate leakage current (positive) IGSS 10 µA VGS = 8 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current (negative) IGSS -10 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C 6
Drain-source on-state resistance RDSon 19 23 mΩ VGS = 4.5 V; ID = 5.7 A; Tj = 25 °C 6
Drain-source on-state resistance RDSon 31 37 mΩ VGS = 4.5 V; ID = 5.7 A; Tj = 150 °C 6
Drain-source on-state resistance RDSon 22 30 mΩ VGS = 2.5 V; ID = 5 A; Tj = 25 °C 6
Drain-source on-state resistance RDSon 27 38 mΩ VGS = 1.8 V; ID = 1.9 A; Tj = 25 °C 6
Total gate charge QG(tot) 12.4 18.6 nC VDS = 10 V; ID = 5 A; VGS = 4.5 V; Tj = 25 °C (shared printed condition block for QG(tot), QGS, QGD) 6
Source-drain voltage VSD 0.7 1.2 V IS = 1.2 A; VGS = 0 V; Tj = 25 °C 6

CAD (KiCad official)

  • Symbol: PMV20XNER
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pmv20xner-etched.step / pmv20xner-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmv20xner.step / pmv20xner.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (15 pp, sha256 ee38510a26efa8e5, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF