component
PMV20XNER
Public Made by Adomby adom
Nexperia MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
pmv20xner: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
2 files changed
+340−1
README.md+32@@ -21,6 +21,38 @@ PMV20XNER from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDS | | | 30 | V | | 3 |+| Gate-source voltage | VGS | -12 | | 12 | V | Tj = 25 °C | 3 |+| Drain current | ID | | | 7.2 | A | VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] | 3 |+| Drain current | ID | | | 5.7 | A | VGS = 4.5 V; Tamb = 25 °C [1] | 3 |+| Drain current | ID | | | 3.6 | A | VGS = 4.5 V; Tamb = 100 °C [1] | 3 |+| Peak drain current | IDM | | | 24 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 |+| Total power dissipation | Ptot | | | 510 | mW | Tamb = 25 °C [2] (standard footprint) | 3 |+| Total power dissipation | Ptot | | | 1200 | mW | Tamb = 25 °C [1] (mounting pad for drain 6 cm2) | 3 |+| Total power dissipation | Ptot | | | 6940 | mW | Tsp = 25 °C | 3 |+| Junction temperature | Tj | -55 | | 150 | °C | | 3 |+| Ambient temperature | Tamb | -55 | | 150 | °C | | 3 |+| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |+| Source current (source-drain diode) | IS | | | 1.2 | A | Tamb = 25 °C [1] | 3 |+| Thermal resistance junction to solder point | Rth(j-sp) | | 13 | 18 | K/W | | 5 |+| Drain-source breakdown voltage | V(BR)DSS | 30 | | | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 |+| Gate-source threshold voltage | VGSth | 0.4 | 0.65 | 0.9 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |+| Drain leakage current | IDSS | | | 1 | µA | VDS = 30 V; VGS = 0 V; Tj = 25 °C | 6 |+| Gate leakage current (positive) | IGSS | | | 10 | µA | VGS = 8 V; VDS = 0 V; Tj = 25 °C | 6 |+| Gate leakage current (negative) | IGSS | | | -10 | µA | VGS = -8 V; VDS = 0 V; Tj = 25 °C | 6 |+| Drain-source on-state resistance | RDSon | | 19 | 23 | mΩ | VGS = 4.5 V; ID = 5.7 A; Tj = 25 °C | 6 |+| Drain-source on-state resistance | RDSon | | 31 | 37 | mΩ | VGS = 4.5 V; ID = 5.7 A; Tj = 150 °C | 6 |+| Drain-source on-state resistance | RDSon | | 22 | 30 | mΩ | VGS = 2.5 V; ID = 5 A; Tj = 25 °C | 6 |+| Drain-source on-state resistance | RDSon | | 27 | 38 | mΩ | VGS = 1.8 V; ID = 1.9 A; Tj = 25 °C | 6 |+| Total gate charge | QG(tot) | | 12.4 | 18.6 | nC | VDS = 10 V; ID = 5 A; VGS = 4.5 V; Tj = 25 °C (shared printed condition block for QG(tot), QGS, QGD) | 6 |+| Source-drain voltage | VSD | | 0.7 | 1.2 | V | IS = 1.2 A; VGS = 0 V; Tj = 25 °C | 6 |+ ## CAD (KiCad official) - Symbol: `PMV20XNER`
page.json+308−1@@ -149,6 +149,313 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "ee38510a26efa8e5",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 7.2,+ "conditions": "VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5.7,+ "conditions": "VGS = 4.5 V; Tamb = 25 °C [1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3.6,+ "conditions": "VGS = 4.5 V; Tamb = 100 °C [1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Peak drain current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 24,+ "conditions": "Tamb = 25 °C; single pulse; tp ≤ 10 µs",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 510,+ "conditions": "Tamb = 25 °C [2] (standard footprint)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 1200,+ "conditions": "Tamb = 25 °C [1] (mounting pad for drain 6 cm2)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 6940,+ "conditions": "Tsp = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Junction temperature",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Ambient temperature",+ "symbol": "Tamb",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -65,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Source current (source-drain diode)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "Tamb = 25 °C [1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction to solder point",+ "symbol": "Rth(j-sp)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": 13,+ "max": 18,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "ID = 250 µA; VGS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate-source threshold voltage",+ "symbol": "VGSth",+ "kind": "electrical",+ "unit": "V",+ "min": 0.4,+ "typ": 0.65,+ "max": 0.9,+ "conditions": "ID = 250 µA; VDS = VGS; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Drain leakage current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 30 V; VGS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate leakage current (positive)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VGS = 8 V; VDS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate leakage current (negative)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -10,+ "conditions": "VGS = -8 V; VDS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDSon",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 19,+ "max": 23,+ "conditions": "VGS = 4.5 V; ID = 5.7 A; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDSon",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 31,+ "max": 37,+ "conditions": "VGS = 4.5 V; ID = 5.7 A; Tj = 150 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDSon",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 22,+ "max": 30,+ "conditions": "VGS = 2.5 V; ID = 5 A; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDSon",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 27,+ "max": 38,+ "conditions": "VGS = 1.8 V; ID = 1.9 A; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "QG(tot)",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 12.4,+ "max": 18.6,+ "conditions": "VDS = 10 V; ID = 5 A; VGS = 4.5 V; Tj = 25 °C (shared printed condition block for QG(tot), QGS, QGD)",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Source-drain voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.7,+ "max": 1.2,+ "conditions": "IS = 1.2 A; VGS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +497,4 @@ "visibility": { "public": true }-}+}