# PMDT290UNE

**Nexperia** · MOSFETs · SOT-666

PMDT290UNE from Nexperia, in a SOT-666. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of transistor TR1 (per-transistor VDS maximum is 20 V and VGS is limited to -8 V to 8 V). |
| 2 | G1 | input | Gate terminal of transistor TR1; gate-source voltage is limited to -8 V to 8 V (Tj = 25 °C). |
| 3 | D2 | passive | Drain terminal of transistor TR2; drain-source voltage is limited to 20 V and continuous drain current to 800 mA at VGS = 4.5 V, Tamb = 25 °C. |
| 4 | S2 | passive | Source terminal of transistor TR2 (per-transistor VDS maximum is 20 V and VGS is limited to -8 V to 8 V). |
| 5 | G2 | input | Gate terminal of transistor TR2; gate-source voltage is limited to -8 V to 8 V (Tj = 25 °C). |
| 6 | D1 | passive | Drain terminal of transistor TR1; drain-source voltage is limited to 20 V and continuous drain current to 800 mA at VGS = 4.5 V, Tamb = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-666 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | 20 | V |  | 3 |
| Gate-source voltage | VGS | -8 |  | 8 | V | Tj = 25 °C | 3 |
| Drain current | ID |  |  | 800 | mA | VGS = 4.5 V; Tamb = 25 °C [1] | 3 |
| Drain current | ID |  |  | 500 | mA | VGS = 4.5 V; Tamb = 100 °C [1] | 3 |
| Peak drain current | IDM |  |  | 3.2 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 |
| Total power dissipation | Ptot |  |  | 330 | mW | Tamb = 25 °C [2] | 3 |
| Total power dissipation | Ptot |  |  | 390 | mW | [1] | 3 |
| Total power dissipation | Ptot |  |  | 1090 | mW | Tsp = 25 °C | 3 |
| Total power dissipation (per device) | Ptot |  |  | 500 | mW | Tamb = 25 °C [2] | 3 |
| Junction temperature | Tj | -55 |  | 150 | °C |  | 3 |
| Ambient temperature | Tamb | -55 |  | 150 | °C |  | 3 |
| Storage temperature | Tstg | -65 |  | 150 | °C |  | 3 |
| Source current | IS |  |  | 370 | mA | Tamb = 25 °C | 3 |
| Electrostatic discharge voltage | VESD |  |  | 2000 | V | HBM [3] | 3 |
| Thermal resistance junction to ambient | Rth(j-a) |  | 330 | 380 | K/W | in free air [1] | 5 |
| Thermal resistance junction to ambient | Rth(j-a) |  | 280 | 320 | K/W | in free air [2] | 5 |
| Thermal resistance junction to solder point | Rth(j-sp) |  |  | 115 | K/W |  | 5 |
| Thermal resistance junction to ambient (per device) | Rth(j-a) |  |  | 250 | K/W | in free air [1] | 5 |
| Drain-source breakdown voltage | V(BR)DSS | 20 |  |  | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 |
| Gate-source threshold voltage | VGSth | 0.5 | 0.75 | 0.95 | V | ID = 250 µA; VDS=VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS |  |  | 1 | µA | VDS = 20 V; VGS = 0 V; Tj = 25 °C | 6 |
| Drain leakage current | IDSS |  |  | 10 | µA | VDS = 20 V; VGS = 0 V; Tj = 150 °C | 6 |
| Gate leakage current | IGSS |  |  | 2 | µA | VGS = 8 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS |  |  | 500 | nA | VGS = 4.5 V; VDS = 0 V; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon |  | 290 | 380 | mΩ | VGS = 4.5 V; ID = 500 mA; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon |  | 460 | 610 | mΩ | VGS = 4.5 V; ID = 500 mA; Tj = 150 °C | 6 |
| Drain-source on-state resistance | RDSon |  | 420 | 620 | mΩ | VGS = 2.5 V; ID = 400 mA; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon |  | 600 | 1100 | mΩ | VGS = 1.8 V; ID = 100 mA; Tj = 25 °C | 6 |
| Input capacitance | Ciss |  | 55 | 83 | pF | VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 |
| Turn-on delay time | td(on) |  | 6 | 12 | ns | VDS = 10 V; RL = 250 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
| Turn-off delay time | td(off) |  | 86 | 172 | ns | VDS = 10 V; RL = 250 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
| Total gate charge | QG(tot) |  | 0.45 | 0.68 | nC | VDS = 10 V; ID = 500 mA; VGS = 4.5 V; Tj = 25 °C | 6 |
| Source-drain voltage | VSD | 0.48 | 0.77 | 1.2 | V | IS = 300 mA; VGS = 0 V; Tj = 25 °C | 6 |

## CAD (KiCad official)

- Symbol: `PMDT290UNE`
- Footprint: `Package_TO_SOT_SMD:SOT-666`
- 3D model: SOT-666 (KiCad packages3D, STEP)
- 3D model files: `pmdt290une-etched.step` / `pmdt290une-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pmdt290une.step` / `pmdt290une.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/PMDT290UNE.pdf) (14 pp, sha256 `8079e0dc990bf431`, retrieved 2026-10-19, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/pmdt290une-datasheet.pdf)