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PMDT290UNE

Public Made by Adom

by adom

Nexperia MOSFETs, SOT-666. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PMDT290UNE

Nexperia · MOSFETs · SOT-666

PMDT290UNE from Nexperia, in a SOT-666. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of transistor TR1 (per-transistor VDS maximum is 20 V and VGS is limited to -8 V to 8 V).
2 G1 input Gate terminal of transistor TR1; gate-source voltage is limited to -8 V to 8 V (Tj = 25 °C).
3 D2 passive Drain terminal of transistor TR2; drain-source voltage is limited to 20 V and continuous drain current to 800 mA at VGS = 4.5 V, Tamb = 25 °C.
4 S2 passive Source terminal of transistor TR2 (per-transistor VDS maximum is 20 V and VGS is limited to -8 V to 8 V).
5 G2 input Gate terminal of transistor TR2; gate-source voltage is limited to -8 V to 8 V (Tj = 25 °C).
6 D1 passive Drain terminal of transistor TR1; drain-source voltage is limited to 20 V and continuous drain current to 800 mA at VGS = 4.5 V, Tamb = 25 °C.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-666
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 20 V 3
Gate-source voltage VGS -8 8 V Tj = 25 °C 3
Drain current ID 800 mA VGS = 4.5 V; Tamb = 25 °C [1] 3
Drain current ID 500 mA VGS = 4.5 V; Tamb = 100 °C [1] 3
Peak drain current IDM 3.2 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
Total power dissipation Ptot 330 mW Tamb = 25 °C [2] 3
Total power dissipation Ptot 390 mW [1] 3
Total power dissipation Ptot 1090 mW Tsp = 25 °C 3
Total power dissipation (per device) Ptot 500 mW Tamb = 25 °C [2] 3
Junction temperature Tj -55 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Source current IS 370 mA Tamb = 25 °C 3
Electrostatic discharge voltage VESD 2000 V HBM [3] 3
Thermal resistance junction to ambient Rth(j-a) 330 380 K/W in free air [1] 5
Thermal resistance junction to ambient Rth(j-a) 280 320 K/W in free air [2] 5
Thermal resistance junction to solder point Rth(j-sp) 115 K/W 5
Thermal resistance junction to ambient (per device) Rth(j-a) 250 K/W in free air [1] 5
Drain-source breakdown voltage V(BR)DSS 20 V ID = 250 µA; VGS = 0 V; Tj = 25 °C 6
Gate-source threshold voltage VGSth 0.5 0.75 0.95 V ID = 250 µA; VDS=VGS; Tj = 25 °C 6
Drain leakage current IDSS 1 µA VDS = 20 V; VGS = 0 V; Tj = 25 °C 6
Drain leakage current IDSS 10 µA VDS = 20 V; VGS = 0 V; Tj = 150 °C 6
Gate leakage current IGSS 2 µA VGS = 8 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 500 nA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C 6
Drain-source on-state resistance RDSon 290 380 mΩ VGS = 4.5 V; ID = 500 mA; Tj = 25 °C 6
Drain-source on-state resistance RDSon 460 610 mΩ VGS = 4.5 V; ID = 500 mA; Tj = 150 °C 6
Drain-source on-state resistance RDSon 420 620 mΩ VGS = 2.5 V; ID = 400 mA; Tj = 25 °C 6
Drain-source on-state resistance RDSon 600 1100 mΩ VGS = 1.8 V; ID = 100 mA; Tj = 25 °C 6
Input capacitance Ciss 55 83 pF VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C 6
Turn-on delay time td(on) 6 12 ns VDS = 10 V; RL = 250 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C 6
Turn-off delay time td(off) 86 172 ns VDS = 10 V; RL = 250 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C 6
Total gate charge QG(tot) 0.45 0.68 nC VDS = 10 V; ID = 500 mA; VGS = 4.5 V; Tj = 25 °C 6
Source-drain voltage VSD 0.48 0.77 1.2 V IS = 300 mA; VGS = 0 V; Tj = 25 °C 6

CAD (KiCad official)

  • Symbol: PMDT290UNE
  • Footprint: Package_TO_SOT_SMD:SOT-666
  • 3D model: SOT-666 (KiCad packages3D, STEP)
  • 3D model files: pmdt290une-etched.step / pmdt290une-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmdt290une.step / pmdt290une.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (14 pp, sha256 8079e0dc990bf431, retrieved 2026-10-19, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF