component
PMDT290UNE
Public Made by Adomby adom
Nexperia MOSFETs, SOT-666. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPMDT290UNE
Nexperia · MOSFETs · SOT-666
PMDT290UNE from Nexperia, in a SOT-666. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of transistor TR1 (per-transistor VDS maximum is 20 V and VGS is limited to -8 V to 8 V). |
| 2 | G1 | input | Gate terminal of transistor TR1; gate-source voltage is limited to -8 V to 8 V (Tj = 25 °C). |
| 3 | D2 | passive | Drain terminal of transistor TR2; drain-source voltage is limited to 20 V and continuous drain current to 800 mA at VGS = 4.5 V, Tamb = 25 °C. |
| 4 | S2 | passive | Source terminal of transistor TR2 (per-transistor VDS maximum is 20 V and VGS is limited to -8 V to 8 V). |
| 5 | G2 | input | Gate terminal of transistor TR2; gate-source voltage is limited to -8 V to 8 V (Tj = 25 °C). |
| 6 | D1 | passive | Drain terminal of transistor TR1; drain-source voltage is limited to 20 V and continuous drain current to 800 mA at VGS = 4.5 V, Tamb = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-666 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 20 | V | 3 | |||
| Gate-source voltage | VGS | -8 | 8 | V | Tj = 25 °C | 3 | |
| Drain current | ID | 800 | mA | VGS = 4.5 V; Tamb = 25 °C [1] | 3 | ||
| Drain current | ID | 500 | mA | VGS = 4.5 V; Tamb = 100 °C [1] | 3 | ||
| Peak drain current | IDM | 3.2 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 | ||
| Total power dissipation | Ptot | 330 | mW | Tamb = 25 °C [2] | 3 | ||
| Total power dissipation | Ptot | 390 | mW | [1] | 3 | ||
| Total power dissipation | Ptot | 1090 | mW | Tsp = 25 °C | 3 | ||
| Total power dissipation (per device) | Ptot | 500 | mW | Tamb = 25 °C [2] | 3 | ||
| Junction temperature | Tj | -55 | 150 | °C | 3 | ||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Source current | IS | 370 | mA | Tamb = 25 °C | 3 | ||
| Electrostatic discharge voltage | VESD | 2000 | V | HBM [3] | 3 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 330 | 380 | K/W | in free air [1] | 5 | |
| Thermal resistance junction to ambient | Rth(j-a) | 280 | 320 | K/W | in free air [2] | 5 | |
| Thermal resistance junction to solder point | Rth(j-sp) | 115 | K/W | 5 | |||
| Thermal resistance junction to ambient (per device) | Rth(j-a) | 250 | K/W | in free air [1] | 5 | ||
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 | ||
| Gate-source threshold voltage | VGSth | 0.5 | 0.75 | 0.95 | V | ID = 250 µA; VDS=VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | 1 | µA | VDS = 20 V; VGS = 0 V; Tj = 25 °C | 6 | ||
| Drain leakage current | IDSS | 10 | µA | VDS = 20 V; VGS = 0 V; Tj = 150 °C | 6 | ||
| Gate leakage current | IGSS | 2 | µA | VGS = 8 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | 500 | nA | VGS = 4.5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Drain-source on-state resistance | RDSon | 290 | 380 | mΩ | VGS = 4.5 V; ID = 500 mA; Tj = 25 °C | 6 | |
| Drain-source on-state resistance | RDSon | 460 | 610 | mΩ | VGS = 4.5 V; ID = 500 mA; Tj = 150 °C | 6 | |
| Drain-source on-state resistance | RDSon | 420 | 620 | mΩ | VGS = 2.5 V; ID = 400 mA; Tj = 25 °C | 6 | |
| Drain-source on-state resistance | RDSon | 600 | 1100 | mΩ | VGS = 1.8 V; ID = 100 mA; Tj = 25 °C | 6 | |
| Input capacitance | Ciss | 55 | 83 | pF | VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 | |
| Turn-on delay time | td(on) | 6 | 12 | ns | VDS = 10 V; RL = 250 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 | |
| Turn-off delay time | td(off) | 86 | 172 | ns | VDS = 10 V; RL = 250 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 | |
| Total gate charge | QG(tot) | 0.45 | 0.68 | nC | VDS = 10 V; ID = 500 mA; VGS = 4.5 V; Tj = 25 °C | 6 | |
| Source-drain voltage | VSD | 0.48 | 0.77 | 1.2 | V | IS = 300 mA; VGS = 0 V; Tj = 25 °C | 6 |
CAD (KiCad official)
- Symbol:
PMDT290UNE - Footprint:
Package_TO_SOT_SMD:SOT-666 - 3D model: SOT-666 (KiCad packages3D, STEP)
- 3D model files:
pmdt290une-etched.step/pmdt290une-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pmdt290une.step/pmdt290une.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (14 pp, sha256
8079e0dc990bf431, retrieved 2026-10-19, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).