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PJM20H05NTE

Public Made by Adom

by adom

PJSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PJM20H05NTE

PJSEMI · MOSFETs · TO-252

PJM20H05NTE from PJSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the N-channel enhancement MOSFET; gate-source voltage is rated ±30 V, and gate threshold VGS(th) is 0.4 V min, 0.7 V typ, 1.5 V max at VDS=VGS, ID=250μA.
2 Drain passive Drain of the MOSFET; drain-source voltage is rated 200 V, continuous drain current 5 A, and pulsed drain current 20 A.
3 Source passive Source of the MOSFET; the source-drain diode forward current IS is rated 5 A maximum, with diode forward voltage VSD of 1.5 V max at VGS=0V, IS=5A.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 200 V Ratings at 25℃ case temperature unless otherwise specified 1
Gate-Source Voltage VGS -30 30 V Ratings at 25℃ case temperature unless otherwise specified 1
Drain Current-Continuous ID 5 A Ratings at 25℃ case temperature unless otherwise specified 1
Drain Current-Pulsed IDM 20 A Ratings at 25℃ case temperature unless otherwise specified 1
Single pulse avalanche energy EAS 30 mJ Ratings at 25℃ case temperature unless otherwise specified 1
Maximum Power Dissipation PD 40 W Ratings at 25℃ case temperature unless otherwise specified 1
Junction Temperature TJ 150 °C Ratings at 25℃ case temperature unless otherwise specified 1
Storage Temperature Range TSTG -55 150 °C Ratings at 25℃ case temperature unless otherwise specified 1
Drain-Source Breakdown Voltage V(BR)DSS 200 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=200V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±30V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.4 0.7 1.5 V VDS=VGS,ID=250μA 2
Drain-Source On-Resistance RDS(on) 2.5 3 Ω VGS=4.5V,ID=0.5A 2
Drain-Source On-Resistance RDS(on) 2.8 4 Ω VGS=2.5V,ID=0.5A 2
Diode Forward Voltage VSD 1.5 V VGS=0V,IS=5A 2
Diode Forward Current IS 5 A 2
Thermal Resistance, Junction-to-Ambient RθJA 62.5 °C/W Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) 1
Maximum Junction-to-Case RθJC 3.13 °C/W Note 2 1

CAD (KiCad official)

  • Symbol: PJM20H05NTE
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: pjm20h05nte-etched.step / pjm20h05nte-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pjm20h05nte.step / pjm20h05nte.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (6 pp, sha256 fdb49b2cbd2e32c1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF