# PJM20H05NTE

**PJSEMI** · MOSFETs · TO-252

PJM20H05NTE from PJSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel enhancement MOSFET; gate-source voltage is rated ±30 V, and gate threshold VGS(th) is 0.4 V min, 0.7 V typ, 1.5 V max at VDS=VGS, ID=250μA. |
| 2 | Drain | passive | Drain of the MOSFET; drain-source voltage is rated 200 V, continuous drain current 5 A, and pulsed drain current 20 A. |
| 3 | Source | passive | Source of the MOSFET; the source-drain diode forward current IS is rated 5 A maximum, with diode forward voltage VSD of 1.5 V max at VGS=0V, IS=5A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 200 | V | Ratings at 25℃ case temperature unless otherwise specified | 1 |
| Gate-Source Voltage | VGS | -30 |  | 30 | V | Ratings at 25℃ case temperature unless otherwise specified | 1 |
| Drain Current-Continuous | ID |  |  | 5 | A | Ratings at 25℃ case temperature unless otherwise specified | 1 |
| Drain Current-Pulsed | IDM |  |  | 20 | A | Ratings at 25℃ case temperature unless otherwise specified | 1 |
| Single pulse avalanche energy | EAS |  |  | 30 | mJ | Ratings at 25℃ case temperature unless otherwise specified | 1 |
| Maximum Power Dissipation | PD |  |  | 40 | W | Ratings at 25℃ case temperature unless otherwise specified | 1 |
| Junction Temperature | TJ |  |  | 150 | °C | Ratings at 25℃ case temperature unless otherwise specified | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C | Ratings at 25℃ case temperature unless otherwise specified | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 200 |  |  | V | VGS=0V,ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=200V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±30V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.7 | 1.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 2.5 | 3 | Ω | VGS=4.5V,ID=0.5A | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 2.8 | 4 | Ω | VGS=2.5V,ID=0.5A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.5 | V | VGS=0V,IS=5A | 2 |
| Diode Forward Current | IS |  |  | 5 | A |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  | 62.5 |  | °C/W | Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) | 1 |
| Maximum Junction-to-Case | RθJC |  | 3.13 |  | °C/W | Note 2 | 1 |

## CAD (KiCad official)

- Symbol: `PJM20H05NTE`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `pjm20h05nte-etched.step` / `pjm20h05nte-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pjm20h05nte.step` / `pjm20h05nte.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [PJSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603548500336656384) (6 pp, sha256 `fdb49b2cbd2e32c1`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/pjm20h05nte-datasheet.pdf)