component
PJM20H05NTE
Public Made by Adomby adom
PJSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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{
"schema_version": 1,
"type": "component",
"slug": "pjm20h05nte",
"title": "PJM20H05NTE",
"brief": "PJSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"transistors-thyristors",
"pjm20h05nte",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "PJM20H05NTE",
"manufacturer": "PJSEMI",
"package": "TO-252",
"pin_count": 3,
"category": "Transistors/Thyristors",
"subcategory": "MOSFETs",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603548500336656384",
"parts": {
"symbol": "pjm20h05nte.kicad_sym",
"footprint": "pjm20h05nte.kicad_mod",
"model_3d": "pjm20h05nte-hero.glb",
"model_3d_plain": "pjm20h05nte-etched.glb",
"model_3d_step": "pjm20h05nte-etched.step",
"model_3d_step_plain": "pjm20h05nte.step",
"lbr": "pjm20h05nte.lbr"
},
"distributor_links": {
"lcsc": "C36493743"
},
"distributor_check": {
"checked_at": "2026-10-18T11:44:45Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "quota"
},
"mouser": {
"pn": null,
"status": "quota"
}
},
"pins": [
{
"number": "1",
"name": "Gate",
"type": "input",
"description": "Gate of the N-channel enhancement MOSFET; gate-source voltage is rated ±30 V, and gate threshold VGS(th) is 0.4 V min, 0.7 V typ, 1.5 V max at VDS=VGS, ID=250μA."
},
{
"number": "2",
"name": "Drain",
"type": "passive",
"description": "Drain of the MOSFET; drain-source voltage is rated 200 V, continuous drain current 5 A, and pulsed drain current 20 A."
},
{
"number": "3",
"name": "Source",
"type": "passive",
"description": "Source of the MOSFET; the source-drain diode forward current IS is rated 5 A maximum, with diode forward voltage VSD of 1.5 V max at VGS=0V, IS=5A."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-haiku-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The datasheet names only three leads (1 Gate, 2 Drain, 3 Source) for the TO-252 package. The package; Pin types for Drain and Source are set to passive (MOSFET terminals with no defined ERC class in the"
],
"pages_sent": 6,
"cost_usd": 0.0238,
"at": "2026-10-18T11:41:10"
},
"datasheet": {
"url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603548500336656384",
"pages": 6,
"sha256": "fdb49b2cbd2e32c1",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 3,
"described": 3,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "pjm20h05nte.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
9.9,
6.5,
2.32
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
"checked": "2026-10-18",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "pjm20h05nte-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
9.9,
6.5,
2.32
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "cf449e2051b16e770784d86035ea38dd79fd4d8a44e1d37fdc304c422dec13e9",
"checked": "2026-10-18",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "PJSEMI",
"Package": "TO-252",
"Category": "Transistors/Thyristors",
"Pins": "3"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "fdb49b2cbd2e32c19a4c8a0a95f13d268e23b6b6d8bbdd92c01ab58706e951b7",
"rows": [
{
"name": "Drain-Source Voltage",
"symbol": "VDS",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 200,
"conditions": "Ratings at 25℃ case temperature unless otherwise specified",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-Source Voltage",
"symbol": "VGS",
"kind": "absolute_maximum",
"unit": "V",
"min": -30,
"typ": null,
"max": 30,
"conditions": "Ratings at 25℃ case temperature unless otherwise specified",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain Current-Continuous",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 5,
"conditions": "Ratings at 25℃ case temperature unless otherwise specified",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain Current-Pulsed",
"symbol": "IDM",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 20,
"conditions": "Ratings at 25℃ case temperature unless otherwise specified",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Single pulse avalanche energy",
"symbol": "EAS",
"kind": "absolute_maximum",
"unit": "mJ",
"min": null,
"typ": null,
"max": 30,
"conditions": "Ratings at 25℃ case temperature unless otherwise specified",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Power Dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 40,
"conditions": "Ratings at 25℃ case temperature unless otherwise specified",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Junction Temperature",
"symbol": "TJ",
"kind": "absolute_maximum",
"unit": "°C",
"min": null,
"typ": null,
"max": 150,
"conditions": "Ratings at 25℃ case temperature unless otherwise specified",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Storage Temperature Range",
"symbol": "TSTG",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 150,
"conditions": "Ratings at 25℃ case temperature unless otherwise specified",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain-Source Breakdown Voltage",
"symbol": "V(BR)DSS",
"kind": "electrical",
"unit": "V",
"min": 200,
"typ": null,
"max": null,
"conditions": "VGS=0V,ID=250μA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero Gate Voltage Drain Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "μA",
"min": null,
"typ": null,
"max": 1,
"conditions": "VDS=200V,VGS=0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-Body Leakage Current",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": -100,
"typ": null,
"max": 100,
"conditions": "VGS=±30V,VDS=0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate Threshold Voltage",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": 0.4,
"typ": 0.7,
"max": 1.5,
"conditions": "VDS=VGS,ID=250μA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-Resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": 2.5,
"max": 3,
"conditions": "VGS=4.5V,ID=0.5A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-Resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": 2.8,
"max": 4,
"conditions": "VGS=2.5V,ID=0.5A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Diode Forward Voltage",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": null,
"max": 1.5,
"conditions": "VGS=0V,IS=5A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Diode Forward Current",
"symbol": "IS",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": 5,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Thermal Resistance, Junction-to-Ambient",
"symbol": "RθJA",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 62.5,
"max": null,
"conditions": "Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2)",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Junction-to-Case",
"symbol": "RθJC",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 3.13,
"max": null,
"conditions": "Note 2",
"source_page": 1,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"pjm20h05nte"
],
"discovery_pitch": "PJM20H05NTE (PJSEMI) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"pjm20h05nte.kicad_sym",
"pjm20h05nte.kicad_mod",
"pjm20h05nte.glb",
"pjm20h05nte.step",
"pjm20h05nte.lbr",
"docs/hero.png",
"docs/pjm20h05nte-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"pjm20h05nte-hero.glb",
"pjm20h05nte-hero.overlay.json",
"pjm20h05nte-etched.glb"
],
"visibility": {
"public": true
}
}