# NVF5P03T3G

**onsemi** · MOSFETs · SOT-223-3

NVF5P03T3G from onsemi, in a SOT-223-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. P-channel MOSFET control terminal; logic-level gate drive with VGS(th) typ -1.75 V. Absolute maximum VGS = ±20 V. |
| 2 | D | passive | Drain. Power terminal of the P-channel MOSFET. VDSS = -30 V, ID continuous = -5.2 A at TA=25°C. Internally tied to pin 4 (tab). |
| 3 | S | passive | Source. Power return terminal of the P-channel MOSFET; internal source-drain body diode anode. |
| 4 | D | passive | Drain (tab). Large heat-spreader tab electrically identical to pin 2; provides the main thermal path to the PCB copper pour. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-223-3 |
| Category | Transistors/Thyristors |
| Pins | 4 |

## Ordering variants

Same part, different packaging or reel option.

- `NVF5P03T3G`

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS |  |  | -30 | V |  | 2 |
| Drain-to-Gate Voltage | VDGR |  |  | -30 | V | RGS = 1.0 M | 2 |
| Gate-to-Source Voltage - Continuous | VGS | -20 |  | 20 | V |  | 2 |
| Thermal Resistance - Junction to Ambient | RTHJA |  |  | 40 | °C/W | 1 sq in FR-4 or G-10 PCB, 10 seconds | 2 |
| Total Power Dissipation @ TA = 25°C | PD |  |  | 3.13 | Watts | TA = 25°C, 1 sq in FR-4 or G-10 PCB, 10 seconds | 2 |
| Linear Derating Factor | PD |  |  | 25 | mW/°C | 1 sq in FR-4 or G-10 PCB, 10 seconds | 2 |
| Drain Current - Continuous @ TA = 25°C | ID |  |  | -5.2 | A | TA = 25°C, 1 sq in FR-4 or G-10 PCB, 10 seconds | 2 |
| Drain Current - Continuous @ TA = 70°C | ID |  |  | -4.1 | A | TA = 70°C, 1 sq in FR-4 or G-10 PCB, 10 seconds | 2 |
| Pulsed Drain Current | IDM |  |  | -26 | A | 1 sq in FR-4 or G-10 PCB, 10 seconds; Note 1 | 2 |
| Thermal Resistance - Junction to Ambient (minimum pad) | RTHJA |  |  | 80 | °C/W | Minimum FR-4 or G-10 PCB, 10 seconds | 2 |
| Total Power Dissipation @ TA = 25°C (minimum pad) | PD |  |  | 1.56 | Watts | TA = 25°C, Minimum FR-4 or G-10 PCB, 10 seconds | 2 |
| Linear Derating Factor (minimum pad) | PD |  |  | 12.5 | mW/°C | Minimum FR-4 or G-10 PCB, 10 seconds | 2 |
| Drain Current - Continuous @ TA = 25°C (minimum pad) | ID |  |  | -3.7 | A | TA = 25°C, Minimum FR-4 or G-10 PCB, 10 seconds | 2 |
| Drain Current - Continuous @ TA = 70°C (minimum pad) | ID |  |  | -2.9 | A | TA = 70°C, Minimum FR-4 or G-10 PCB, 10 seconds | 2 |
| Pulsed Drain Current (minimum pad) | IDM |  |  | -19 | A | Minimum FR-4 or G-10 PCB, 10 seconds; Note 1 | 2 |
| Operating and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 2 |
| Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C | EAS |  |  | 250 | mJ | VDD = −30 Vdc, VGS = −10 Vdc, Peak IL = −12 Apk, L = 3.5 mH, RG = 25 | 2 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -30 |  |  | Vdc | VGS = 0 Vdc, ID = −250 Adc | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | Adc | VDS = −24 Vdc, VGS = 0 Vdc | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -25 | Adc | VDS = −24 Vdc, VGS = 0 Vdc, TJ = 125°C | 3 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nAdc | VGS = ± 20 Vdc, VDS = 0 Vdc | 3 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.75 | -3 | Vdc | VDS = VGS, ID = −250 Adc | 3 |
| Static Drain-to-Source On-Resistance | RDS(on) |  | 76 | 107 | m | VGS = −10 Vdc, ID = −5.2 Adc | 3 |
| Static Drain-to-Source On-Resistance | RDS(on) |  | 100 | 150 | m | VGS = −4.5 Vdc, ID = −2.6 Adc | 3 |
| Forward Transconductance | gfs | 2 | 3.9 |  | Mhos | VDS = −15 Vdc, ID = −2.0 Adc | 3 |
| Input Capacitance | Ciss |  | 500 | 950 | pF | VDS = −25 Vdc, VGS = 0 V, f = 1.0 MHz | 3 |
| Output Capacitance | Coss |  | 153 | 440 | pF | VDS = −25 Vdc, VGS = 0 V, f = 1.0 MHz | 3 |
| Transfer Capacitance | Crss |  | 58 | 140 | pF | VDS = −25 Vdc, VGS = 0 V, f = 1.0 MHz | 3 |
| Turn-On Delay Time | td(on) |  | 10 | 24 | ns | VDD = −15 Vdc, ID = −4.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) | 3 |
| Rise Time | tr |  | 33 | 48 | ns | VDD = −15 Vdc, ID = −4.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) | 3 |
| Turn-Off Delay Time | td(off) |  | 38 | 94 | ns | VDD = −15 Vdc, ID = −4.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) | 3 |
| Fall Time | tf |  | 20 | 92 | ns | VDD = −15 Vdc, ID = −4.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) | 3 |
| Turn-On Delay Time | td(on) |  | 16 | 38 | ns | VDD = −15 Vdc, ID = −2.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) | 3 |
| Rise Time | tr |  | 45 | 110 | ns | VDD = −15 Vdc, ID = −2.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) | 3 |
| Turn-Off Delay Time | td(off) |  | 23 | 60 | ns | VDD = −15 Vdc, ID = −2.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) | 3 |
| Fall Time | tf |  | 24 | 80 | ns | VDD = −15 Vdc, ID = −2.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) | 3 |
| Total Gate Charge | QT |  | 15 | 38 | nC | VDS = −24 Vdc, ID = −4.0 Adc, VGS = −10 Vdc (Note 2) | 3 |
| Forward On-Voltage | VSD |  |  | -1.1 | Vdc | IS = −4.0 Adc, VGS = 0 Vdc | 3 |
| Forward On-Voltage | VSD |  | -0.89 | -1.5 | Vdc | IS = −4.0 Adc, VGS = 0 Vdc, TJ = 125°C (Note 2) | 3 |

## CAD (KiCad official)

- Symbol: `NVF5P03T3G`
- Footprint: `Package_TO_SOT_SMD:SOT-223-3_TabPin2`
- 3D model: SOT-223-3 (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588950118473076736) (9 pp, sha256 `14001d34020757a1`, retrieved 2026-08-17, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nvf5p03t3g-datasheet.pdf)