component
NVF5P03T3G
Public Made by Adomby adom
onsemi MOSFETs, SOT-223-3. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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NVF5P03T3G
onsemi · MOSFETs · SOT-223-3
NVF5P03T3G from onsemi, in a SOT-223-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. P-channel MOSFET control terminal; logic-level gate drive with VGS(th) typ -1.75 V. Absolute maximum VGS = ±20 V. |
| 2 | D | passive | Drain. Power terminal of the P-channel MOSFET. VDSS = -30 V, ID continuous = -5.2 A at TA=25°C. Internally tied to pin 4 (tab). |
| 3 | S | passive | Source. Power return terminal of the P-channel MOSFET; internal source-drain body diode anode. |
| 4 | D | passive | Drain (tab). Large heat-spreader tab electrically identical to pin 2; provides the main thermal path to the PCB copper pour. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-223-3 |
| Category | Transistors/Thyristors |
| Pins | 4 |
Ordering variants
Same part, different packaging or reel option.
NVF5P03T3G
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -30 | V | 2 | |||
| Drain-to-Gate Voltage | VDGR | -30 | V | RGS = 1.0 M | 2 | ||
| Gate-to-Source Voltage - Continuous | VGS | -20 | 20 | V | 2 | ||
| Thermal Resistance - Junction to Ambient | RTHJA | 40 | °C/W | 1 sq in FR-4 or G-10 PCB, 10 seconds | 2 | ||
| Total Power Dissipation @ TA = 25°C | PD | 3.13 | Watts | TA = 25°C, 1 sq in FR-4 or G-10 PCB, 10 seconds | 2 | ||
| Linear Derating Factor | PD | 25 | mW/°C | 1 sq in FR-4 or G-10 PCB, 10 seconds | 2 | ||
| Drain Current - Continuous @ TA = 25°C | ID | -5.2 | A | TA = 25°C, 1 sq in FR-4 or G-10 PCB, 10 seconds | 2 | ||
| Drain Current - Continuous @ TA = 70°C | ID | -4.1 | A | TA = 70°C, 1 sq in FR-4 or G-10 PCB, 10 seconds | 2 | ||
| Pulsed Drain Current | IDM | -26 | A | 1 sq in FR-4 or G-10 PCB, 10 seconds; Note 1 | 2 | ||
| Thermal Resistance - Junction to Ambient (minimum pad) | RTHJA | 80 | °C/W | Minimum FR-4 or G-10 PCB, 10 seconds | 2 | ||
| Total Power Dissipation @ TA = 25°C (minimum pad) | PD | 1.56 | Watts | TA = 25°C, Minimum FR-4 or G-10 PCB, 10 seconds | 2 | ||
| Linear Derating Factor (minimum pad) | PD | 12.5 | mW/°C | Minimum FR-4 or G-10 PCB, 10 seconds | 2 | ||
| Drain Current - Continuous @ TA = 25°C (minimum pad) | ID | -3.7 | A | TA = 25°C, Minimum FR-4 or G-10 PCB, 10 seconds | 2 | ||
| Drain Current - Continuous @ TA = 70°C (minimum pad) | ID | -2.9 | A | TA = 70°C, Minimum FR-4 or G-10 PCB, 10 seconds | 2 | ||
| Pulsed Drain Current (minimum pad) | IDM | -19 | A | Minimum FR-4 or G-10 PCB, 10 seconds; Note 1 | 2 | ||
| Operating and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 2 | ||
| Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C | EAS | 250 | mJ | VDD = −30 Vdc, VGS = −10 Vdc, Peak IL = −12 Apk, L = 3.5 mH, RG = 25 | 2 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -30 | Vdc | VGS = 0 Vdc, ID = −250 Adc | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | Adc | VDS = −24 Vdc, VGS = 0 Vdc | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -25 | Adc | VDS = −24 Vdc, VGS = 0 Vdc, TJ = 125°C | 3 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nAdc | VGS = ± 20 Vdc, VDS = 0 Vdc | 3 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.75 | -3 | Vdc | VDS = VGS, ID = −250 Adc | 3 |
| Static Drain-to-Source On-Resistance | RDS(on) | 76 | 107 | m | VGS = −10 Vdc, ID = −5.2 Adc | 3 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 100 | 150 | m | VGS = −4.5 Vdc, ID = −2.6 Adc | 3 | |
| Forward Transconductance | gfs | 2 | 3.9 | Mhos | VDS = −15 Vdc, ID = −2.0 Adc | 3 | |
| Input Capacitance | Ciss | 500 | 950 | pF | VDS = −25 Vdc, VGS = 0 V, f = 1.0 MHz | 3 | |
| Output Capacitance | Coss | 153 | 440 | pF | VDS = −25 Vdc, VGS = 0 V, f = 1.0 MHz | 3 | |
| Transfer Capacitance | Crss | 58 | 140 | pF | VDS = −25 Vdc, VGS = 0 V, f = 1.0 MHz | 3 | |
| Turn-On Delay Time | td(on) | 10 | 24 | ns | VDD = −15 Vdc, ID = −4.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) | 3 | |
| Rise Time | tr | 33 | 48 | ns | VDD = −15 Vdc, ID = −4.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) | 3 | |
| Turn-Off Delay Time | td(off) | 38 | 94 | ns | VDD = −15 Vdc, ID = −4.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) | 3 | |
| Fall Time | tf | 20 | 92 | ns | VDD = −15 Vdc, ID = −4.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) | 3 | |
| Turn-On Delay Time | td(on) | 16 | 38 | ns | VDD = −15 Vdc, ID = −2.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) | 3 | |
| Rise Time | tr | 45 | 110 | ns | VDD = −15 Vdc, ID = −2.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) | 3 | |
| Turn-Off Delay Time | td(off) | 23 | 60 | ns | VDD = −15 Vdc, ID = −2.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) | 3 | |
| Fall Time | tf | 24 | 80 | ns | VDD = −15 Vdc, ID = −2.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) | 3 | |
| Total Gate Charge | QT | 15 | 38 | nC | VDS = −24 Vdc, ID = −4.0 Adc, VGS = −10 Vdc (Note 2) | 3 | |
| Forward On-Voltage | VSD | -1.1 | Vdc | IS = −4.0 Adc, VGS = 0 Vdc | 3 | ||
| Forward On-Voltage | VSD | -0.89 | -1.5 | Vdc | IS = −4.0 Adc, VGS = 0 Vdc, TJ = 125°C (Note 2) | 3 |
CAD (KiCad official)
- Symbol:
NVF5P03T3G - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (9 pp, sha256
14001d34020757a1, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).