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NVF5P03T3G

onsemi · MOSFETs · SOT-223-3

NVF5P03T3G from onsemi, in a SOT-223-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. P-channel MOSFET control terminal; logic-level gate drive with VGS(th) typ -1.75 V. Absolute maximum VGS = ±20 V.
2 D passive Drain. Power terminal of the P-channel MOSFET. VDSS = -30 V, ID continuous = -5.2 A at TA=25°C. Internally tied to pin 4 (tab).
3 S passive Source. Power return terminal of the P-channel MOSFET; internal source-drain body diode anode.
4 D passive Drain (tab). Large heat-spreader tab electrically identical to pin 2; provides the main thermal path to the PCB copper pour.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-223-3
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • NVF5P03T3G

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS -30 V 2
Drain-to-Gate Voltage VDGR -30 V RGS = 1.0 M 2
Gate-to-Source Voltage - Continuous VGS -20 20 V 2
Thermal Resistance - Junction to Ambient RTHJA 40 °C/W 1 sq in FR-4 or G-10 PCB, 10 seconds 2
Total Power Dissipation @ TA = 25°C PD 3.13 Watts TA = 25°C, 1 sq in FR-4 or G-10 PCB, 10 seconds 2
Linear Derating Factor PD 25 mW/°C 1 sq in FR-4 or G-10 PCB, 10 seconds 2
Drain Current - Continuous @ TA = 25°C ID -5.2 A TA = 25°C, 1 sq in FR-4 or G-10 PCB, 10 seconds 2
Drain Current - Continuous @ TA = 70°C ID -4.1 A TA = 70°C, 1 sq in FR-4 or G-10 PCB, 10 seconds 2
Pulsed Drain Current IDM -26 A 1 sq in FR-4 or G-10 PCB, 10 seconds; Note 1 2
Thermal Resistance - Junction to Ambient (minimum pad) RTHJA 80 °C/W Minimum FR-4 or G-10 PCB, 10 seconds 2
Total Power Dissipation @ TA = 25°C (minimum pad) PD 1.56 Watts TA = 25°C, Minimum FR-4 or G-10 PCB, 10 seconds 2
Linear Derating Factor (minimum pad) PD 12.5 mW/°C Minimum FR-4 or G-10 PCB, 10 seconds 2
Drain Current - Continuous @ TA = 25°C (minimum pad) ID -3.7 A TA = 25°C, Minimum FR-4 or G-10 PCB, 10 seconds 2
Drain Current - Continuous @ TA = 70°C (minimum pad) ID -2.9 A TA = 70°C, Minimum FR-4 or G-10 PCB, 10 seconds 2
Pulsed Drain Current (minimum pad) IDM -19 A Minimum FR-4 or G-10 PCB, 10 seconds; Note 1 2
Operating and Storage Temperature Range TJ, Tstg -55 150 °C 2
Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C EAS 250 mJ VDD = −30 Vdc, VGS = −10 Vdc, Peak IL = −12 Apk, L = 3.5 mH, RG = 25 2
Drain-to-Source Breakdown Voltage V(BR)DSS -30 Vdc VGS = 0 Vdc, ID = −250 Adc 3
Zero Gate Voltage Drain Current IDSS -1 Adc VDS = −24 Vdc, VGS = 0 Vdc 3
Zero Gate Voltage Drain Current IDSS -25 Adc VDS = −24 Vdc, VGS = 0 Vdc, TJ = 125°C 3
Gate-Body Leakage Current IGSS -100 100 nAdc VGS = ± 20 Vdc, VDS = 0 Vdc 3
Gate Threshold Voltage VGS(th) -1 -1.75 -3 Vdc VDS = VGS, ID = −250 Adc 3
Static Drain-to-Source On-Resistance RDS(on) 76 107 m VGS = −10 Vdc, ID = −5.2 Adc 3
Static Drain-to-Source On-Resistance RDS(on) 100 150 m VGS = −4.5 Vdc, ID = −2.6 Adc 3
Forward Transconductance gfs 2 3.9 Mhos VDS = −15 Vdc, ID = −2.0 Adc 3
Input Capacitance Ciss 500 950 pF VDS = −25 Vdc, VGS = 0 V, f = 1.0 MHz 3
Output Capacitance Coss 153 440 pF VDS = −25 Vdc, VGS = 0 V, f = 1.0 MHz 3
Transfer Capacitance Crss 58 140 pF VDS = −25 Vdc, VGS = 0 V, f = 1.0 MHz 3
Turn-On Delay Time td(on) 10 24 ns VDD = −15 Vdc, ID = −4.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) 3
Rise Time tr 33 48 ns VDD = −15 Vdc, ID = −4.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) 3
Turn-Off Delay Time td(off) 38 94 ns VDD = −15 Vdc, ID = −4.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) 3
Fall Time tf 20 92 ns VDD = −15 Vdc, ID = −4.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) 3
Turn-On Delay Time td(on) 16 38 ns VDD = −15 Vdc, ID = −2.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) 3
Rise Time tr 45 110 ns VDD = −15 Vdc, ID = −2.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) 3
Turn-Off Delay Time td(off) 23 60 ns VDD = −15 Vdc, ID = −2.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) 3
Fall Time tf 24 80 ns VDD = −15 Vdc, ID = −2.0 Adc, VGS = −10 Vdc, RG = 6.0 (Note 2) 3
Total Gate Charge QT 15 38 nC VDS = −24 Vdc, ID = −4.0 Adc, VGS = −10 Vdc (Note 2) 3
Forward On-Voltage VSD -1.1 Vdc IS = −4.0 Adc, VGS = 0 Vdc 3
Forward On-Voltage VSD -0.89 -1.5 Vdc IS = −4.0 Adc, VGS = 0 Vdc, TJ = 125°C (Note 2) 3

CAD (KiCad official)

  • Symbol: NVF5P03T3G
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (9 pp, sha256 14001d34020757a1, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF