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NTS4173PT1G

onsemi · MOSFETs · SC-70-3

NTS4173PT1G from onsemi, in a SC-70-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the P-channel MOSFET, with gate-to-source voltage rated ±12 V (VGS).
2 Source passive Source of the MOSFET, with body-diode source current IS rated −1.0 A.
3 Drain passive Drain of the MOSFET, rated −30 V drain-to-source (VDSS) with continuous drain current of −1.2 A at TA = 25°C (steady state).

Key specifications

Parameter Value
Manufacturer onsemi
Package SC-70-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS -30 V 1
Gate-to-Source Voltage VGS -12 12 V Printed as ±12 V 1
Continuous Drain Current ID -1.2 A Steady state, TA = 25°C (Note 1) 1
Continuous Drain Current ID -0.8 A Steady state, TA = 85°C (Note 1) 1
Continuous Drain Current ID -1.3 A t ≤ 5 s, TA = 25°C (Note 1) 1
Power Dissipation PD 0.29 W Steady state, TA = 25°C (Note 1) 1
Power Dissipation PD 0.35 W t ≤ 5 s (Note 1) 1
Pulsed Drain Current IDM -5 A tp = 10 s 1
Operating Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Source Current (Body Diode) IS -1 A 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8″ from case for 10 s 1
Junction-to-Ambient Thermal Resistance, Steady State RJA 425 °C/W Steady state (Note 1) 1
Junction-to-Ambient Thermal Resistance, t ≤ 5 s RJA 360 °C/W t ≤ 5 s (Note 1) 1
Drain-to-Source Breakdown Voltage V(BR)DSS -30 V VGS = 0 V, ID = −250 A 2
Zero Gate Voltage Drain Current IDSS -1 A VGS = 0 V, VDS = −24 V, TJ = 25°C 2
Zero Gate Voltage Drain Current IDSS -5 A VGS = 0 V, VDS = −24 V, TJ = 85°C 2
Gate-to-Source Leakage Current IGSS -0.1 0.1 A VDS = 0 V, VGS = 12 V 2
Gate Threshold Voltage VGS(TH) -0.7 -1.15 -1.5 V VGS = VDS, ID = −250 A 2
Drain-to-Source On-Resistance RDS(on) 90 150 m VGS = −10 V, ID = −1.2 A 2
Drain-to-Source On-Resistance RDS(on) 110 200 m VGS = −4.5 V, ID = −1.0 A 2
Drain-to-Source On-Resistance RDS(on) 165 280 m VGS = −2.5 V, ID = −0.9 A 2
Forward Diode Voltage VSD -0.8 -1 V VGS = 0 V, IS = −1.0 A 2

CAD (KiCad official)

  • Symbol: NTS4173PT1G
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SC-70-3 (KiCad packages3D, STEP)
  • 3D model files: nts4173pt1g-etched.step / nts4173pt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nts4173pt1g.step / nts4173pt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 3be633522bd32557, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF