# NTS4173PT1G

**onsemi** · MOSFETs · SC-70-3

NTS4173PT1G from onsemi, in a SC-70-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the P-channel MOSFET, with gate-to-source voltage rated ±12 V (VGS). |
| 2 | Source | passive | Source of the MOSFET, with body-diode source current IS rated −1.0 A. |
| 3 | Drain | passive | Drain of the MOSFET, rated −30 V drain-to-source (VDSS) with continuous drain current of −1.2 A at TA = 25°C (steady state). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SC-70-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS |  |  | -30 | V |  | 1 |
| Gate-to-Source Voltage | VGS | -12 |  | 12 | V | Printed as ±12 V | 1 |
| Continuous Drain Current | ID |  |  | -1.2 | A | Steady state, TA = 25°C (Note 1) | 1 |
| Continuous Drain Current | ID |  |  | -0.8 | A | Steady state, TA = 85°C (Note 1) | 1 |
| Continuous Drain Current | ID |  |  | -1.3 | A | t ≤ 5 s, TA = 25°C (Note 1) | 1 |
| Power Dissipation | PD |  |  | 0.29 | W | Steady state, TA = 25°C (Note 1) | 1 |
| Power Dissipation | PD |  |  | 0.35 | W | t ≤ 5 s (Note 1) | 1 |
| Pulsed Drain Current | IDM |  |  | -5 | A | tp = 10 s | 1 |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Source Current (Body Diode) | IS |  |  | -1 | A |  | 1 |
| Lead Temperature for Soldering Purposes | TL |  |  | 260 | °C | 1/8″ from case for 10 s | 1 |
| Junction-to-Ambient Thermal Resistance, Steady State | RJA |  |  | 425 | °C/W | Steady state (Note 1) | 1 |
| Junction-to-Ambient Thermal Resistance, t ≤ 5 s | RJA |  |  | 360 | °C/W | t ≤ 5 s (Note 1) | 1 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -30 |  |  | V | VGS = 0 V, ID = −250 A | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | A | VGS = 0 V, VDS = −24 V, TJ = 25°C | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -5 | A | VGS = 0 V, VDS = −24 V, TJ = 85°C | 2 |
| Gate-to-Source Leakage Current | IGSS | -0.1 |  | 0.1 | A | VDS = 0 V, VGS = 12 V | 2 |
| Gate Threshold Voltage | VGS(TH) | -0.7 | -1.15 | -1.5 | V | VGS = VDS, ID = −250 A | 2 |
| Drain-to-Source On-Resistance | RDS(on) |  | 90 | 150 | m | VGS = −10 V, ID = −1.2 A | 2 |
| Drain-to-Source On-Resistance | RDS(on) |  | 110 | 200 | m | VGS = −4.5 V, ID = −1.0 A | 2 |
| Drain-to-Source On-Resistance | RDS(on) |  | 165 | 280 | m | VGS = −2.5 V, ID = −0.9 A | 2 |
| Forward Diode Voltage | VSD |  | -0.8 | -1 | V | VGS = 0 V, IS = −1.0 A | 2 |

## CAD (KiCad official)

- Symbol: `NTS4173PT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SC-70-3 (KiCad packages3D, STEP)
- 3D model files: `nts4173pt1g-etched.step` / `nts4173pt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nts4173pt1g.step` / `nts4173pt1g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589996978773405696) (7 pp, sha256 `3be633522bd32557`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nts4173pt1g-datasheet.pdf)