main
Ray Set visibility: public eed5806 8d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "nts4173pt1g",
  "title": "NTS4173PT1G",
  "brief": "onsemi MOSFETs, SC-70-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
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  "component": {
    "mpn": "NTS4173PT1G",
    "manufacturer": "onsemi",
    "package": "SC-70-3",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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      "lbr": "nts4173pt1g.lbr"
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    "distributor_links": {
      "lcsc": "C894090",
      "digikey": "NTS4173PT1GOSTR-ND",
      "mouser": "863-NTS4173PT1G"
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    "distributor_check": {
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      "source": "Component Ocean /api/assign-pns",
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        "status": "found",
        "lifecycle": "Active"
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      {
        "number": "2",
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        "description": "Source of the MOSFET, with body-diode source current IS rated −1.0 A."
      },
      {
        "number": "3",
        "name": "Drain",
        "type": "passive",
        "description": "Drain of the MOSFET, rated −30 V drain-to-source (VDSS) with continuous drain current of −1.2 A at TA = 25°C (steady state)."
      }
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        "extractor": "extract_pins 0.3",
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        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
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        "cost_usd": 0.043,
        "at": "2026-10-19T05:54:20"
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        "pages": 7,
        "sha256": "3be633522bd32557",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
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        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "acbf75a28fe41aa90efb38cd2b78220968d6eb6ebae1625dfd532dbeb268fece",
        "checked": "2026-10-19",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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  "metadata": {
    "specs": {
      "Manufacturer": "onsemi",
      "Package": "SC-70-3",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "3be633522bd3255765786a7362191525b0beb9371fed5d92186c5fc1085d3427",
      "rows": [
        {
          "name": "Drain-to-Source Voltage",
          "symbol": "VDSS",
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          "unit": "V",
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          "typ": null,
          "max": -30,
          "conditions": "",
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        },
        {
          "name": "Gate-to-Source Voltage",
          "symbol": "VGS",
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          "unit": "V",
          "min": -12,
          "typ": null,
          "max": 12,
          "conditions": "Printed as ±12 V",
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          "source": "datasheet"
        },
        {
          "name": "Continuous Drain Current",
          "symbol": "ID",
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          "max": -1.2,
          "conditions": "Steady state, TA = 25°C (Note 1)",
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          "name": "Continuous Drain Current",
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          "conditions": "Steady state, TA = 85°C (Note 1)",
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        {
          "name": "Continuous Drain Current",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
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          "max": -1.3,
          "conditions": "t ≤ 5 s, TA = 25°C (Note 1)",
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        },
        {
          "name": "Power Dissipation",
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          "unit": "W",
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        {
          "name": "Power Dissipation",
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          "max": 0.35,
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        },
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          "name": "Pulsed Drain Current",
          "symbol": "IDM",
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          "unit": "A",
          "min": null,
          "typ": null,
          "max": -5,
          "conditions": "tp = 10 s",
          "source_page": 1,
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        },
        {
          "name": "Operating Junction and Storage Temperature",
          "symbol": "TJ, Tstg",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
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        },
        {
          "name": "Source Current (Body Diode)",
          "symbol": "IS",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": -1,
          "conditions": "",
          "source_page": 1,
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        },
        {
          "name": "Lead Temperature for Soldering Purposes",
          "symbol": "TL",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": null,
          "typ": null,
          "max": 260,
          "conditions": "1/8″ from case for 10 s",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Junction-to-Ambient Thermal Resistance, Steady State",
          "symbol": "RJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 425,
          "conditions": "Steady state (Note 1)",
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        {
          "name": "Junction-to-Ambient Thermal Resistance, t ≤ 5 s",
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        },
        {
          "name": "Drain-to-Source Breakdown Voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": -30,
          "typ": null,
          "max": null,
          "conditions": "VGS = 0 V, ID = −250 A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
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          "min": null,
          "typ": null,
          "max": -1,
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          "source_page": 2,
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        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
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          "unit": "A",
          "min": null,
          "typ": null,
          "max": -5,
          "conditions": "VGS = 0 V, VDS = −24 V, TJ = 85°C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-to-Source Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "A",
          "min": -0.1,
          "typ": null,
          "max": 0.1,
          "conditions": "VDS = 0 V, VGS = 12 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(TH)",
          "kind": "electrical",
          "unit": "V",
          "min": -0.7,
          "typ": -1.15,
          "max": -1.5,
          "conditions": "VGS = VDS, ID = −250 A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-to-Source On-Resistance",
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          "kind": "electrical",
          "unit": "m",
          "min": null,
          "typ": 90,
          "max": 150,
          "conditions": "VGS = −10 V, ID = −1.2 A",
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          "source": "datasheet"
        },
        {
          "name": "Drain-to-Source On-Resistance",
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          "unit": "m",
          "min": null,
          "typ": 110,
          "max": 200,
          "conditions": "VGS = −4.5 V, ID = −1.0 A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-to-Source On-Resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "m",
          "min": null,
          "typ": 165,
          "max": 280,
          "conditions": "VGS = −2.5 V, ID = −0.9 A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Forward Diode Voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": -0.8,
          "max": -1,
          "conditions": "VGS = 0 V, IS = −1.0 A",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
    }
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  "discovery_pitch": "NTS4173PT1G (onsemi) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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