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NTMD4840NR2G

Public Made by Adom

by adom

onsemi MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NTMD4840NR2G

onsemi · MOSFETs · SOIC-8

NTMD4840NR2G from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1; the datasheet gives no pin-specific limit, only device maximum ratings (VDSS 30 V, VGS ±20 V, TJ/TSTG −55 to +150 °C).
2 G1 input Gate of N-channel MOSFET 1; gate-to-source voltage is rated at ±20 V maximum.
3 S2 passive Source of N-channel MOSFET 2; the datasheet gives no pin-specific limit, only device maximum ratings (VDSS 30 V, VGS ±20 V, TJ/TSTG −55 to +150 °C).
4 G2 input Gate of N-channel MOSFET 2; gate-to-source voltage is rated at ±20 V maximum.
5 D2 passive Drain of N-channel MOSFET 2; pins 5 and 6 are both printed as DRAIN 2 and are connected together on the device, with the datasheet giving only device maximum ratings (VDSS 30 V, ID 7.5 A max).
6 D2 passive Drain of N-channel MOSFET 2; printed as DRAIN 2 together with pin 5, with the datasheet giving only device maximum ratings (VDSS 30 V, ID 7.5 A max).
7 D1 passive Drain of N-channel MOSFET 1; pins 7 and 8 are both printed as DRAIN 1 and are connected together on the device, with the datasheet giving only device maximum ratings (VDSS 30 V, ID 7.5 A max).
8 D1 passive Drain of N-channel MOSFET 1; printed as DRAIN 1 together with pin 7, with the datasheet giving only device maximum ratings (VDSS 30 V, ID 7.5 A max).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 30 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 5.5 A Steady state, TA = 25°C, Note 1 1
Continuous Drain Current ID 4.4 A Steady state, TA = 70°C, Note 1 1
Power Dissipation PD 1.14 W Steady state, TA = 25°C, Note 1 1
Continuous Drain Current ID 4.5 A Steady state, TA = 25°C, Note 2 1
Continuous Drain Current ID 3.5 A Steady state, TA = 70°C, Note 2 1
Power Dissipation PD 0.68 W Steady state, TA = 25°C, Note 2 1
Continuous Drain Current ID 7.5 A t < 10 s, TA = 25°C, Note 1 1
Continuous Drain Current ID 6 A t < 10 s, TA = 70°C, Note 1 1
Power Dissipation PD 1.95 W t < 10 s, TA = 25°C, Note 1 1
Pulsed Drain Current IDM 30 A TA = 25°C, tp = 10 s 1
Operating Junction and Storage Temperature TJ, TSTG -55 150 °C 1
Source Current (Body Diode) IS 2 A 1
Single Pulse Drain-to-Source Avalanche Energy EAS 28 mJ TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 7.5 Apk, L = 1.0 mH, RG = 25 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8″ from case for 10 s 1
Junction-to-Ambient, Steady State RJA 110 °C/W Note 1 1
Junction-to-Ambient, t ≤ 10 s RJA 64 °C/W Note 1 1
Junction-to-Foot (Drain) RJF 40 °C/W 1
Junction-to-Ambient, Steady State RJA 183.5 °C/W Note 2 1
Drain-to-Source Breakdown Voltage V(BR)DSS 30 V VGS = 0 V, ID = 250 A 2
Zero Gate Voltage Drain Current, TJ = 25°C IDSS 1 µA VGS = 0 V, VDS = 24 V, TJ = 25°C 2
Zero Gate Voltage Drain Current, TJ = 100°C IDSS 10 µA VGS = 0 V, VDS = 24 V, TJ = 100°C 2
Gate-to-Source Leakage Current IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Gate Threshold Voltage VGS(TH) 1.5 3 V VGS = VDS, ID = 250 µA 2
Drain-to-Source On Resistance RDS(on) 16 24 mΩ VGS = 10 V, ID = 6.9 A 2
Drain-to-Source On Resistance RDS(on) 26 36 mΩ VGS = 4.5 V, ID = 5.0 A 2
Forward Diode Voltage, TJ = 25°C VSD 0.76 1 V VGS = 0 V, ID = 2.0 A, TJ = 25°C 2
Gate Resistance RG 2 3 Ω 2

CAD (KiCad official)

  • Symbol: NTMD4840NR2G
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ntmd4840nr2g-etched.step / ntmd4840nr2g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntmd4840nr2g.step / ntmd4840nr2g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 acab7f2f9ff66530, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF