NTMD4840NR2G

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  "title": "NTMD4840NR2G",
  "brief": "onsemi MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
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    "mpn": "NTMD4840NR2G",
    "manufacturer": "onsemi",
    "package": "SOIC-8",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586187375239815168",
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    "distributor_links": {
      "lcsc": "C97778",
      "digikey": "NTMD4840NR2GOSTR-ND",
      "mouser": "863-NTMD4840NR2G"
    },
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      "source": "Component Ocean /api/assign-pns",
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        "pn": "NTMD4840NR2GOSTR-ND",
        "status": "found",
        "lifecycle": "Obsolete"
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      "mouser": {
        "pn": "863-NTMD4840NR2G",
        "status": "found",
        "lifecycle": "End of Life"
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    },
    "pins": [
      {
        "number": "1",
        "name": "S1",
        "type": "passive",
        "description": "Source of N-channel MOSFET 1; the datasheet gives no pin-specific limit, only device maximum ratings (VDSS 30 V, VGS ±20 V, TJ/TSTG −55 to +150 °C)."
      },
      {
        "number": "2",
        "name": "G1",
        "type": "input",
        "description": "Gate of N-channel MOSFET 1; gate-to-source voltage is rated at ±20 V maximum."
      },
      {
        "number": "3",
        "name": "S2",
        "type": "passive",
        "description": "Source of N-channel MOSFET 2; the datasheet gives no pin-specific limit, only device maximum ratings (VDSS 30 V, VGS ±20 V, TJ/TSTG −55 to +150 °C)."
      },
      {
        "number": "4",
        "name": "G2",
        "type": "input",
        "description": "Gate of N-channel MOSFET 2; gate-to-source voltage is rated at ±20 V maximum."
      },
      {
        "number": "5",
        "name": "D2",
        "type": "passive",
        "description": "Drain of N-channel MOSFET 2; pins 5 and 6 are both printed as DRAIN 2 and are connected together on the device, with the datasheet giving only device maximum ratings (VDSS 30 V, ID 7.5 A max)."
      },
      {
        "number": "6",
        "name": "D2",
        "type": "passive",
        "description": "Drain of N-channel MOSFET 2; printed as DRAIN 2 together with pin 5, with the datasheet giving only device maximum ratings (VDSS 30 V, ID 7.5 A max)."
      },
      {
        "number": "7",
        "name": "D1",
        "type": "passive",
        "description": "Drain of N-channel MOSFET 1; pins 7 and 8 are both printed as DRAIN 1 and are connected together on the device, with the datasheet giving only device maximum ratings (VDSS 30 V, ID 7.5 A max)."
      },
      {
        "number": "8",
        "name": "D1",
        "type": "passive",
        "description": "Drain of N-channel MOSFET 1; printed as DRAIN 1 together with pin 7, with the datasheet giving only device maximum ratings (VDSS 30 V, ID 7.5 A max)."
      }
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      "Manufacturer": "onsemi",
      "Package": "SOIC-8",
      "Category": "Transistors/Thyristors",
      "Pins": "8"
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          "name": "Drain-to-Source Breakdown Voltage",
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          "min": 30,
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          "name": "Zero Gate Voltage Drain Current, TJ = 25°C",
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          "name": "Gate-to-Source Leakage Current",
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          "name": "Gate Threshold Voltage",
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          "name": "Drain-to-Source On Resistance",
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          "name": "Drain-to-Source On Resistance",
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          "name": "Gate Resistance",
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