component

NTH4L070N120M3S

Public Made by Adom

by adom

onsemi Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) devicesnth4l070n120m3s
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs nth4l070n120m3s: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
viewers nth4l070n120m3s: viewers · Ray 1mo ago
nth4l070n120m3s-etched.fit.json nth4l070n120m3s: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
nth4l070n120m3s-etched.glb nth4l070n120m3s: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
nth4l070n120m3s-etched.step nth4l070n120m3s: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
nth4l070n120m3s.glb Publish 0.1.0 · Ray 1mo ago
nth4l070n120m3s.kicad_mod Publish 0.1.0 · Ray 1mo ago
nth4l070n120m3s.kicad_sym Publish 0.1.0 · Ray 1mo ago
nth4l070n120m3s.lbr Publish 0.1.0 · Ray 1mo ago
nth4l070n120m3s.step Publish 0.1.0 · Ray 1mo ago
package.json Publish 0.1.0 · Ray 1mo ago
page.json nth4l070n120m3s: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding) · Ray 29d ago
README.md nth4l070n120m3s: laser-etched CAD + chip hero (factory 2.0.0 backfill) · Ray 1mo ago

NTH4L070N120M3S

onsemi · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

NTH4L070N120M3S from onsemi, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Driver Source (Kelvin source). Low-inductance source reference used by the gate driver only; carries only gate-loop return current, not the main drain current. Improves switching performance by decoupling driver return from power-source parasitic inductance.
2 G input Gate. Controls the MOSFET channel. Recommended V_GS operating range −3 V to +18 V; absolute max V_GS = −10 V / +22 V. Typical V_GS(th) = 2.9 V (I_D = 7 mA). Total gate charge Q_G(tot) ≈ 57 nC at V_GS = −3/+18 V, V_DS = 800 V.
3 D passive Drain. V_DSS = 1200 V (breakdown); continuous I_D = 34 A at T_C = 25 °C (24 A at T_C = 100 °C); pulsed I_DM = 98 A. Also connected to the metal mounting tab of the TO-247-4L package.
4 S2 passive Power Source. Main source lead that carries the drain-to-source load current back to the power-loop return. Integral body diode (source-to-drain) has V_SD ≈ 4.7 V typ at I_SD = 15 A, V_GS = −3 V; continuous I_S = 31 A.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • NTH4L070N120M3S

CAD (KiCad official)

  • Symbol: NTH4L070N120M3S
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: nth4l070n120m3s-etched.step / nth4l070n120m3s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nth4l070n120m3s.step / nth4l070n120m3s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 bd736a1bc627d172, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF