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NTH4L070N120M3S
Public Made by Adomby adom
onsemi Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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NTH4L070N120M3S
onsemi · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L
NTH4L070N120M3S from onsemi, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Driver Source (Kelvin source). Low-inductance source reference used by the gate driver only; carries only gate-loop return current, not the main drain current. Improves switching performance by decoupling driver return from power-source parasitic inductance. |
| 2 | G | input | Gate. Controls the MOSFET channel. Recommended V_GS operating range −3 V to +18 V; absolute max V_GS = −10 V / +22 V. Typical V_GS(th) = 2.9 V (I_D = 7 mA). Total gate charge Q_G(tot) ≈ 57 nC at V_GS = −3/+18 V, V_DS = 800 V. |
| 3 | D | passive | Drain. V_DSS = 1200 V (breakdown); continuous I_D = 34 A at T_C = 25 °C (24 A at T_C = 100 °C); pulsed I_DM = 98 A. Also connected to the metal mounting tab of the TO-247-4L package. |
| 4 | S2 | passive | Power Source. Main source lead that carries the drain-to-source load current back to the power-loop return. Integral body diode (source-to-drain) has V_SD ≈ 4.7 V typ at I_SD = 15 A, V_GS = −3 V; continuous I_S = 31 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-247-4L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 4 |
Ordering variants
Same part, different packaging or reel option.
NTH4L070N120M3S
CAD (KiCad official)
- Symbol:
NTH4L070N120M3S - Footprint:
Package_TO_SOT_THT:TO-247-4_Vertical - 3D model: TO-247-4L (KiCad packages3D, STEP)
- 3D model files:
nth4l070n120m3s-etched.step/nth4l070n120m3s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nth4l070n120m3s.step/nth4l070n120m3s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (8 pp, sha256
bd736a1bc627d172, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NTH4L070N120M3S
**onsemi** · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L
NTH4L070N120M3S from onsemi, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Driver Source (Kelvin source). Low-inductance source reference used by the gate driver only; carries only gate-loop return current, not the main drain current. Improves switching performance by decoupling driver return from power-source parasitic inductance. |
| 2 | G | input | Gate. Controls the MOSFET channel. Recommended V_GS operating range −3 V to +18 V; absolute max V_GS = −10 V / +22 V. Typical V_GS(th) = 2.9 V (I_D = 7 mA). Total gate charge Q_G(tot) ≈ 57 nC at V_GS = −3/+18 V, V_DS = 800 V. |
| 3 | D | passive | Drain. V_DSS = 1200 V (breakdown); continuous I_D = 34 A at T_C = 25 °C (24 A at T_C = 100 °C); pulsed I_DM = 98 A. Also connected to the metal mounting tab of the TO-247-4L package. |
| 4 | S2 | passive | Power Source. Main source lead that carries the drain-to-source load current back to the power-loop return. Integral body diode (source-to-drain) has V_SD ≈ 4.7 V typ at I_SD = 15 A, V_GS = −3 V; continuous I_S = 31 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-247-4L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 4 |
## Ordering variants
Same part, different packaging or reel option.
- `NTH4L070N120M3S`
## CAD (KiCad official)
- Symbol: `NTH4L070N120M3S`
- Footprint: `Package_TO_SOT_THT:TO-247-4_Vertical`
- 3D model: TO-247-4L (KiCad packages3D, STEP)
- 3D model files: `nth4l070n120m3s-etched.step` / `nth4l070n120m3s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nth4l070n120m3s.step` / `nth4l070n120m3s.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602734235388702720) (8 pp, sha256 `bd736a1bc627d172`, retrieved 2026-08-17, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nth4l070n120m3s-datasheet.pdf)