component
NTH4L070N120M3S
Public Made by Adomby adom
onsemi Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
main
Ray
nth4l070n120m3s: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding)
9c365c2
29d ago
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"title": "NTH4L070N120M3S",
"brief": "onsemi Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
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"manufacturer": "onsemi",
"package": "TO-247-4L",
"pin_count": 4,
"category": "Silicon Carbide (SiC) Devices",
"subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602734235388702720",
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"pins": [
{
"number": "1",
"name": "S1",
"type": "passive",
"description": "Driver Source (Kelvin source). Low-inductance source reference used by the gate driver only; carries only gate-loop return current, not the main drain current. Improves switching performance by decoupling driver return from power-source parasitic inductance."
},
{
"number": "2",
"name": "G",
"type": "input",
"description": "Gate. Controls the MOSFET channel. Recommended V_GS operating range −3 V to +18 V; absolute max V_GS = −10 V / +22 V. Typical V_GS(th) = 2.9 V (I_D = 7 mA). Total gate charge Q_G(tot) ≈ 57 nC at V_GS = −3/+18 V, V_DS = 800 V."
},
{
"number": "3",
"name": "D",
"type": "passive",
"description": "Drain. V_DSS = 1200 V (breakdown); continuous I_D = 34 A at T_C = 25 °C (24 A at T_C = 100 °C); pulsed I_DM = 98 A. Also connected to the metal mounting tab of the TO-247-4L package."
},
{
"number": "4",
"name": "S2",
"type": "passive",
"description": "Power Source. Main source lead that carries the drain-to-source load current back to the power-loop return. Integral body diode (source-to-drain) has V_SD ≈ 4.7 V typ at I_SD = 15 A, V_GS = −3 V; continuous I_S = 31 A."
}
],
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"pages": 8,
"sha256": "bd736a1bc627d172",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
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"described": 4,
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"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
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5.03,
41.1
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"footprint_binding": "identity",
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"checked": "2026-10-07",
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"sha256": "b0d1ad7b43d549e2e4a5b851e2ca401b12fe3dab5cedce8ff6854da802eadfde",
"checked": "2026-10-07",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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]
},
"metadata": {
"specs": {
"Manufacturer": "onsemi",
"Package": "TO-247-4L",
"Category": "Silicon Carbide (SiC) Devices",
"Pins": "4"
}
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"updated_at": "2026-09-25T03:20:37.112Z"
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