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NSVMMBT5401LT3G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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nsvmmbt5401lt3g: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
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17d ago
NSVMMBT5401LT3G
onsemi · Bipolar (BJT) · SOT-23
NSVMMBT5401LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the PNP transistor; the datasheet gives no base-only limit, and the device's absolute maximum ratings (VEBO −5.0 Vdc, IC −500 mAdc continuous) apply to this pin's operation. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor, with emitter-base voltage limited to −5.0 Vdc (VEBO) and collector current limited to −500 mAdc continuous. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor, rated for −150 Vdc collector-emitter (VCEO) and −160 Vdc collector-base (VCBO), with −500 mAdc continuous collector current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -150 | Vdc | 2 | |||
| Collector-Base Voltage | VCBO | -160 | Vdc | 2 | |||
| Emitter-Base Voltage | VEBO | -5 | Vdc | 2 | |||
| Collector Current - Continuous | IC | -500 | mAdc | 2 | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 2 | ||
| Total Device Dissipation (FR-5 Board) | PD | 225 | mW | FR-5 Board (Note 1), TA = 25°C | 2 | ||
| Derate Above 25°C (FR-5 Board) | PD | 1.8 | mW/°C | FR-5 Board (Note 1), derate above TA = 25°C | 2 | ||
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | °C/W | FR-5 Board (Note 1) | 2 | ||
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | Alumina Substrate (Note 2), TA = 25°C | 2 | ||
| Derate Above 25°C (Alumina Substrate) | PD | 2.4 | mW/°C | Alumina Substrate (Note 2), derate above TA = 25°C | 2 | ||
| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RJA | 417 | °C/W | Alumina Substrate (Note 2) | 2 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -150 | Vdc | IC = −1.0 mAdc, IB = 0 | 3 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -160 | Vdc | IC = −100 Adc, IE = 0 | 3 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | Vdc | IE = −10 Adc, IC = 0 | 3 | ||
| Collector-Base Cutoff Current | ICBO | -50 | nAdc | VCB = −120 Vdc, IE = 0 | 3 | ||
| Collector-Base Cutoff Current | ICBO | -50 | Adc | VCB = −120 Vdc, IE = 0, TA = 100°C | 3 | ||
| DC Current Gain | hFE | 50 | IC = −1.0 mAdc, VCE = −5.0 Vdc | 3 | |||
| DC Current Gain | hFE | 60 | 240 | IC = −10 mAdc, VCE = −5.0 Vdc | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.2 | Vdc | IC = −10 mAdc, IB = −1.0 mAdc | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.5 | Vdc | IC = −50 mAdc, IB = −5.0 mAdc | 3 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -1 | Vdc | IC = −10 mAdc, IB = −1.0 mAdc | 3 | ||
| Current-Gain Bandwidth Product | fT | 100 | 300 | MHz | IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz | 3 | |
| Output Capacitance | Cobo | 6 | pF | VCB = −10 Vdc, IE = 0, f = 1.0 MHz | 3 | ||
| Small Signal Current Gain | hfe | 40 | 200 | IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz | 3 | ||
| Noise Figure | NF | 8 | dB | IC = −200 Adc, VCE = −5.0 Vdc, RS = 10, f = 1.0 kHz | 3 |
CAD (KiCad official)
- Symbol:
NSVMMBT5401LT3G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
nsvmmbt5401lt3g-etched.step/nsvmmbt5401lt3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nsvmmbt5401lt3g.step/nsvmmbt5401lt3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (8 pp, sha256
c9d60ce4f55cfa03, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NSVMMBT5401LT3G
**onsemi** · Bipolar (BJT) · SOT-23
NSVMMBT5401LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the PNP transistor; the datasheet gives no base-only limit, and the device's absolute maximum ratings (VEBO −5.0 Vdc, IC −500 mAdc continuous) apply to this pin's operation. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor, with emitter-base voltage limited to −5.0 Vdc (VEBO) and collector current limited to −500 mAdc continuous. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor, rated for −150 Vdc collector-emitter (VCEO) and −160 Vdc collector-base (VCBO), with −500 mAdc continuous collector current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -150 | | | Vdc | | 2 |
| Collector-Base Voltage | VCBO | -160 | | | Vdc | | 2 |
| Emitter-Base Voltage | VEBO | -5 | | | Vdc | | 2 |
| Collector Current - Continuous | IC | -500 | | | mAdc | | 2 |
| Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 2 |
| Total Device Dissipation (FR-5 Board) | PD | | | 225 | mW | FR-5 Board (Note 1), TA = 25°C | 2 |
| Derate Above 25°C (FR-5 Board) | PD | | | 1.8 | mW/°C | FR-5 Board (Note 1), derate above TA = 25°C | 2 |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | | | 556 | °C/W | FR-5 Board (Note 1) | 2 |
| Total Device Dissipation (Alumina Substrate) | PD | | | 300 | mW | Alumina Substrate (Note 2), TA = 25°C | 2 |
| Derate Above 25°C (Alumina Substrate) | PD | | | 2.4 | mW/°C | Alumina Substrate (Note 2), derate above TA = 25°C | 2 |
| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RJA | | | 417 | °C/W | Alumina Substrate (Note 2) | 2 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -150 | | | Vdc | IC = −1.0 mAdc, IB = 0 | 3 |
| Collector-Base Breakdown Voltage | V(BR)CBO | -160 | | | Vdc | IC = −100 Adc, IE = 0 | 3 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | | | Vdc | IE = −10 Adc, IC = 0 | 3 |
| Collector-Base Cutoff Current | ICBO | | | -50 | nAdc | VCB = −120 Vdc, IE = 0 | 3 |
| Collector-Base Cutoff Current | ICBO | | | -50 | Adc | VCB = −120 Vdc, IE = 0, TA = 100°C | 3 |
| DC Current Gain | hFE | 50 | | | | IC = −1.0 mAdc, VCE = −5.0 Vdc | 3 |
| DC Current Gain | hFE | 60 | | 240 | | IC = −10 mAdc, VCE = −5.0 Vdc | 3 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.2 | Vdc | IC = −10 mAdc, IB = −1.0 mAdc | 3 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.5 | Vdc | IC = −50 mAdc, IB = −5.0 mAdc | 3 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | -1 | Vdc | IC = −10 mAdc, IB = −1.0 mAdc | 3 |
| Current-Gain Bandwidth Product | fT | 100 | | 300 | MHz | IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz | 3 |
| Output Capacitance | Cobo | | | 6 | pF | VCB = −10 Vdc, IE = 0, f = 1.0 MHz | 3 |
| Small Signal Current Gain | hfe | 40 | | 200 | | IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz | 3 |
| Noise Figure | NF | | | 8 | dB | IC = −200 Adc, VCE = −5.0 Vdc, RS = 10, f = 1.0 kHz | 3 |
## CAD (KiCad official)
- Symbol: `NSVMMBT5401LT3G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `nsvmmbt5401lt3g-etched.step` / `nsvmmbt5401lt3g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nsvmmbt5401lt3g.step` / `nsvmmbt5401lt3g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588929600344756224) (8 pp, sha256 `c9d60ce4f55cfa03`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nsvmmbt5401lt3g-datasheet.pdf)