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NSVMMBT5401LT3G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 23d ago
viewers nsvmmbt5401lt3g: viewers · Ray 23d ago
nsvmmbt5401lt3g-etched.glb nsvmmbt5401lt3g: factory component page (tier=lcsc) · Ray 23d ago
nsvmmbt5401lt3g-etched.step nsvmmbt5401lt3g: factory component page (tier=lcsc) · Ray 23d ago
nsvmmbt5401lt3g-hero.glb nsvmmbt5401lt3g: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
nsvmmbt5401lt3g-hero.overlay.json Publish 0.1.0 · Ray 23d ago
nsvmmbt5401lt3g.glb Publish 0.1.0 · Ray 23d ago
nsvmmbt5401lt3g.kicad_mod Publish 0.1.0 · Ray 23d ago
nsvmmbt5401lt3g.kicad_sym Publish 0.1.0 · Ray 23d ago
nsvmmbt5401lt3g.lbr Publish 0.1.0 · Ray 23d ago
nsvmmbt5401lt3g.step Publish 0.1.0 · Ray 23d ago
package.json Publish 0.1.0 · Ray 23d ago
page.json nsvmmbt5401lt3g: specified limits as data (metadata.characteristics, 25 rows from the datasheet) · Ray 17d ago
README.md nsvmmbt5401lt3g: specified limits as data (metadata.characteristics, 25 rows from the datasheet) · Ray 17d ago

NSVMMBT5401LT3G

onsemi · Bipolar (BJT) · SOT-23

NSVMMBT5401LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the PNP transistor; the datasheet gives no base-only limit, and the device's absolute maximum ratings (VEBO −5.0 Vdc, IC −500 mAdc continuous) apply to this pin's operation.
2 EMITTER passive Emitter terminal of the PNP transistor, with emitter-base voltage limited to −5.0 Vdc (VEBO) and collector current limited to −500 mAdc continuous.
3 COLLECTOR passive Collector terminal of the PNP transistor, rated for −150 Vdc collector-emitter (VCEO) and −160 Vdc collector-base (VCBO), with −500 mAdc continuous collector current.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO -150 Vdc 2
Collector-Base Voltage VCBO -160 Vdc 2
Emitter-Base Voltage VEBO -5 Vdc 2
Collector Current - Continuous IC -500 mAdc 2
Junction and Storage Temperature TJ, Tstg -55 150 °C 2
Total Device Dissipation (FR-5 Board) PD 225 mW FR-5 Board (Note 1), TA = 25°C 2
Derate Above 25°C (FR-5 Board) PD 1.8 mW/°C FR-5 Board (Note 1), derate above TA = 25°C 2
Thermal Resistance, Junction-to-Ambient (FR-5 Board) RJA 556 °C/W FR-5 Board (Note 1) 2
Total Device Dissipation (Alumina Substrate) PD 300 mW Alumina Substrate (Note 2), TA = 25°C 2
Derate Above 25°C (Alumina Substrate) PD 2.4 mW/°C Alumina Substrate (Note 2), derate above TA = 25°C 2
Thermal Resistance, Junction-to-Ambient (Alumina Substrate) RJA 417 °C/W Alumina Substrate (Note 2) 2
Collector-Emitter Breakdown Voltage V(BR)CEO -150 Vdc IC = −1.0 mAdc, IB = 0 3
Collector-Base Breakdown Voltage V(BR)CBO -160 Vdc IC = −100 Adc, IE = 0 3
Emitter-Base Breakdown Voltage V(BR)EBO -5 Vdc IE = −10 Adc, IC = 0 3
Collector-Base Cutoff Current ICBO -50 nAdc VCB = −120 Vdc, IE = 0 3
Collector-Base Cutoff Current ICBO -50 Adc VCB = −120 Vdc, IE = 0, TA = 100°C 3
DC Current Gain hFE 50 IC = −1.0 mAdc, VCE = −5.0 Vdc 3
DC Current Gain hFE 60 240 IC = −10 mAdc, VCE = −5.0 Vdc 3
Collector-Emitter Saturation Voltage VCE(sat) -0.2 Vdc IC = −10 mAdc, IB = −1.0 mAdc 3
Collector-Emitter Saturation Voltage VCE(sat) -0.5 Vdc IC = −50 mAdc, IB = −5.0 mAdc 3
Base-Emitter Saturation Voltage VBE(sat) -1 Vdc IC = −10 mAdc, IB = −1.0 mAdc 3
Current-Gain Bandwidth Product fT 100 300 MHz IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz 3
Output Capacitance Cobo 6 pF VCB = −10 Vdc, IE = 0, f = 1.0 MHz 3
Small Signal Current Gain hfe 40 200 IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz 3
Noise Figure NF 8 dB IC = −200 Adc, VCE = −5.0 Vdc, RS = 10, f = 1.0 kHz 3

CAD (KiCad official)

  • Symbol: NSVMMBT5401LT3G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: nsvmmbt5401lt3g-etched.step / nsvmmbt5401lt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsvmmbt5401lt3g.step / nsvmmbt5401lt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 c9d60ce4f55cfa03, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF