component
NSVMMBT5401LT3G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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nsvmmbt5401lt3g: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
2 files changed
+340−1
README.md+32@@ -21,6 +21,38 @@ NSVMMBT5401LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-Emitter Voltage | VCEO | -150 | | | Vdc | | 2 |+| Collector-Base Voltage | VCBO | -160 | | | Vdc | | 2 |+| Emitter-Base Voltage | VEBO | -5 | | | Vdc | | 2 |+| Collector Current - Continuous | IC | -500 | | | mAdc | | 2 |+| Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 2 |+| Total Device Dissipation (FR-5 Board) | PD | | | 225 | mW | FR-5 Board (Note 1), TA = 25°C | 2 |+| Derate Above 25°C (FR-5 Board) | PD | | | 1.8 | mW/°C | FR-5 Board (Note 1), derate above TA = 25°C | 2 |+| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | | | 556 | °C/W | FR-5 Board (Note 1) | 2 |+| Total Device Dissipation (Alumina Substrate) | PD | | | 300 | mW | Alumina Substrate (Note 2), TA = 25°C | 2 |+| Derate Above 25°C (Alumina Substrate) | PD | | | 2.4 | mW/°C | Alumina Substrate (Note 2), derate above TA = 25°C | 2 |+| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RJA | | | 417 | °C/W | Alumina Substrate (Note 2) | 2 |+| Collector-Emitter Breakdown Voltage | V(BR)CEO | -150 | | | Vdc | IC = −1.0 mAdc, IB = 0 | 3 |+| Collector-Base Breakdown Voltage | V(BR)CBO | -160 | | | Vdc | IC = −100 Adc, IE = 0 | 3 |+| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | | | Vdc | IE = −10 Adc, IC = 0 | 3 |+| Collector-Base Cutoff Current | ICBO | | | -50 | nAdc | VCB = −120 Vdc, IE = 0 | 3 |+| Collector-Base Cutoff Current | ICBO | | | -50 | Adc | VCB = −120 Vdc, IE = 0, TA = 100°C | 3 |+| DC Current Gain | hFE | 50 | | | | IC = −1.0 mAdc, VCE = −5.0 Vdc | 3 |+| DC Current Gain | hFE | 60 | | 240 | | IC = −10 mAdc, VCE = −5.0 Vdc | 3 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.2 | Vdc | IC = −10 mAdc, IB = −1.0 mAdc | 3 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.5 | Vdc | IC = −50 mAdc, IB = −5.0 mAdc | 3 |+| Base-Emitter Saturation Voltage | VBE(sat) | | | -1 | Vdc | IC = −10 mAdc, IB = −1.0 mAdc | 3 |+| Current-Gain Bandwidth Product | fT | 100 | | 300 | MHz | IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz | 3 |+| Output Capacitance | Cobo | | | 6 | pF | VCB = −10 Vdc, IE = 0, f = 1.0 MHz | 3 |+| Small Signal Current Gain | hfe | 40 | | 200 | | IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz | 3 |+| Noise Figure | NF | | | 8 | dB | IC = −200 Adc, VCE = −5.0 Vdc, RS = 10, f = 1.0 kHz | 3 |+ ## CAD (KiCad official) - Symbol: `NSVMMBT5401LT3G`
page.json+308−1@@ -150,6 +150,313 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "c9d60ce4f55cfa03",+ "rows": [+ {+ "name": "Collector-Emitter Voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": -150,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": -160,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": -5,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Current - Continuous",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mAdc",+ "min": -500,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation (FR-5 Board)",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "FR-5 Board (Note 1), TA = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Derate Above 25°C (FR-5 Board)",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW/°C",+ "min": null,+ "typ": null,+ "max": 1.8,+ "conditions": "FR-5 Board (Note 1), derate above TA = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient (FR-5 Board)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 556,+ "conditions": "FR-5 Board (Note 1)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation (Alumina Substrate)",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Alumina Substrate (Note 2), TA = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Derate Above 25°C (Alumina Substrate)",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW/°C",+ "min": null,+ "typ": null,+ "max": 2.4,+ "conditions": "Alumina Substrate (Note 2), derate above TA = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient (Alumina Substrate)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 417,+ "conditions": "Alumina Substrate (Note 2)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Breakdown Voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "Vdc",+ "min": -150,+ "typ": null,+ "max": null,+ "conditions": "IC = −1.0 mAdc, IB = 0",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Breakdown Voltage",+ "symbol": "V(BR)CBO",+ "kind": "electrical",+ "unit": "Vdc",+ "min": -160,+ "typ": null,+ "max": null,+ "conditions": "IC = −100 Adc, IE = 0",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Breakdown Voltage",+ "symbol": "V(BR)EBO",+ "kind": "electrical",+ "unit": "Vdc",+ "min": -5,+ "typ": null,+ "max": null,+ "conditions": "IE = −10 Adc, IC = 0",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nAdc",+ "min": null,+ "typ": null,+ "max": -50,+ "conditions": "VCB = −120 Vdc, IE = 0",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "Adc",+ "min": null,+ "typ": null,+ "max": -50,+ "conditions": "VCB = −120 Vdc, IE = 0, TA = 100°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 50,+ "typ": null,+ "max": null,+ "conditions": "IC = −1.0 mAdc, VCE = −5.0 Vdc",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 60,+ "typ": null,+ "max": 240,+ "conditions": "IC = −10 mAdc, VCE = −5.0 Vdc",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": -0.2,+ "conditions": "IC = −10 mAdc, IB = −1.0 mAdc",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": -0.5,+ "conditions": "IC = −50 mAdc, IB = −5.0 mAdc",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Saturation Voltage",+ "symbol": "VBE(sat)",+ "kind": "electrical",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "IC = −10 mAdc, IB = −1.0 mAdc",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Current-Gain Bandwidth Product",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 100,+ "typ": null,+ "max": 300,+ "conditions": "IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Cobo",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "VCB = −10 Vdc, IE = 0, f = 1.0 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Small Signal Current Gain",+ "symbol": "hfe",+ "kind": "electrical",+ "unit": "",+ "min": 40,+ "typ": null,+ "max": 200,+ "conditions": "IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Noise Figure",+ "symbol": "NF",+ "kind": "electrical",+ "unit": "dB",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "IC = −200 Adc, VCE = −5.0 Vdc, RS = 10, f = 1.0 kHz",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +498,4 @@ "visibility": { "public": true }-}+}