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NSS40301MDR2G

Public Made by Adom

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onsemi Bipolar (BJT), SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NSS40301MDR2G

onsemi · Bipolar (BJT) · SOIC-8

NSS40301MDR2G from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of NPN die #1 (Style 16 pinout); transistor rated VCEO 40 V, IC 3.0 A continuous.
2 B1 input Base of NPN die #1 (Style 16 pinout); VEBO max 6.0 Vdc.
3 E2 passive Emitter of NPN die #2 (Style 16 pinout); transistor rated VCEO 40 V, IC 3.0 A continuous.
4 B2 input Base of NPN die #2 (Style 16 pinout); VEBO max 6.0 Vdc.
5 C2 passive Collector of NPN die #2, tied with pin 6 (Style 16 pinout); VCEO 40 V, IC 3.0 A continuous, 6.0 A peak.
6 C2 passive Collector of NPN die #2, tied with pin 5 (Style 16 pinout); VCEO 40 V, IC 3.0 A continuous, 6.0 A peak.
7 C1 passive Collector of NPN die #1, tied with pin 8 (Style 16 pinout); VCEO 40 V, IC 3.0 A continuous, 6.0 A peak.
8 C1 passive Collector of NPN die #1, tied with pin 7 (Style 16 pinout); VCEO 40 V, IC 3.0 A continuous, 6.0 A peak.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector−Emitter Voltage VCEO 40 Vdc Maximum Ratings, TA = 25°C 1
Collector−Base Voltage VCBO 40 Vdc Maximum Ratings, TA = 25°C 1
Emitter−Base Voltage VEBO 6 Vdc Maximum Ratings, TA = 25°C 1
Collector Current − Continuous IC 3 A Maximum Ratings, TA = 25°C 1
Collector Current − Peak ICM 6 A Maximum Ratings, TA = 25°C 1
Total Device Dissipation, single heated PD 576 mW Single heated; TA = 25°C; FR-4 @ 10 mm2, 1 oz. copper traces, still air (Note 1) 2
Derate above 25°C, single heated PD 4.6 mW/°C Single heated; derate above 25°C; FR-4 @ 10 mm2 (Note 1) 2
Thermal Resistance, Junction−to−Ambient, single heated RJA 217 °C/W Single heated; FR-4 @ 10 mm2, 1 oz. copper traces, still air (Note 1) 2
Total Device Dissipation, single heated PD 676 mW Single heated; TA = 25°C; FR-4 @ 100 mm2, 1 oz. copper traces, still air (Note 2) 2
Derate above 25°C, single heated PD 5.4 mW/°C Single heated; derate above 25°C; FR-4 @ 100 mm2 (Note 2) 2
Thermal Resistance, Junction−to−Ambient, single heated RJA 185 °C/W Single heated; FR-4 @ 100 mm2, 1 oz. copper traces, still air (Note 2) 2
Total Device Dissipation, dual heated PD 653 mW Dual heated; TA = 25°C; FR-4 @ 10 mm2, 1 oz. copper traces, still air (Note 1, Note 3) 2
Derate above 25°C, dual heated PD 5.2 mW/°C Dual heated; derate above 25°C; FR-4 @ 10 mm2 (Note 1, Note 3) 2
Thermal Resistance, Junction−to−Ambient, dual heated RJA 191 °C/W Dual heated; FR-4 @ 10 mm2, 1 oz. copper traces, still air (Note 1, Note 3) 2
Total Device Dissipation, dual heated PD 783 mW Dual heated; TA = 25°C; FR-4 @ 100 mm2, 1 oz. copper traces, still air (Note 2, Note 3) 2
Derate above 25°C, dual heated PD 6.3 mW/°C Dual heated; derate above 25°C; FR-4 @ 100 mm2 (Note 2, Note 3) 2
Thermal Resistance, Junction−to−Ambient, dual heated RJA 160 °C/W Dual heated; FR-4 @ 100 mm2, 1 oz. copper traces, still air (Note 2, Note 3) 2
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 2
Collector−Emitter Breakdown Voltage V(BR)CEO 40 Vdc IC = 10 mAdc, IB = 0 3
Collector−Base Breakdown Voltage V(BR)CBO 40 Vdc IC = 0.1 mAdc, IE = 0 3
Emitter−Base Breakdown Voltage V(BR)EBO 6 Vdc IE = 0.1 mAdc, IC = 0 3
Collector Cutoff Current ICBO 0.1 Adc VCB = 40 Vdc, IE = 0 3
Emitter Cutoff Current IEBO 0.1 Adc VEB = 6.0 Vdc 3
DC Current Gain hFE 200 400 IC = 10 mA, VCE = 2.0 V (Note 4) 3
DC Current Gain hFE 200 350 IC = 500 mA, VCE = 2.0 V (Note 4) 3
DC Current Gain hFE 180 340 IC = 1.0 A, VCE = 2.0 V (Note 4) 3
DC Current Gain hFE 180 320 IC = 2.0 A, VCE = 2.0 V (Note 4) 3
DC Current Gain ratio, one transistor to the other in same package hFE(1)/hFE(2) 0.9 0.99 IC = 2.0 A, VCE = 2.0 V (Note 5) 3
Collector−Emitter Saturation Voltage VCE(sat) 0.008 0.011 V IC = 0.1 A, IB = 0.010 A (Note 4) 3
Collector−Emitter Saturation Voltage VCE(sat) 0.044 0.06 V IC = 1.0 A, IB = 0.100 A (Note 4) 3
Collector−Emitter Saturation Voltage VCE(sat) 0.08 0.115 V IC = 1.0 A, IB = 0.010 A (Note 4) 3
Collector−Emitter Saturation Voltage VCE(sat) 0.082 0.115 V IC = 2.0 A, IB = 0.200 A (Note 4) 3
Base−Emitter Saturation Voltage VBE(sat) 0.78 0.9 V IC = 1.0 A, IB = 0.01 A (Note 4) 3
Base−Emitter Turn−on Voltage VBE(on) 0.65 0.75 V IC = 0.1 A, VCE = 2.0 V (Note 4) 3
Base−Emitter Turn−on Voltage difference, one transistor to the other in same package VBE(1) − VBE(2) 0.3 2 mV IC = 0.1 A, VCE = 2.0 V (Note 6) 3
Cutoff Frequency fT 100 MHz IC = 100 mA, VCE = 5.0 V, f = 100 MHz 3
Input Capacitance Cibo 320 450 pF VEB = 0.5 V, f = 1.0 MHz 3
Output Capacitance Cobo 40 50 pF VCB = 3.0 V, f = 1.0 MHz 3
Delay Time td 100 ns VCC = 30 V, IC = 750 mA, IB1 = 15 mA 3
Rise Time tr 100 ns VCC = 30 V, IC = 750 mA, IB1 = 15 mA 3
Storage Time ts 780 ns VCC = 30 V, IC = 750 mA, IB1 = 15 mA 3
Fall Time tf 110 ns VCC = 30 V, IC = 750 mA, IB1 = 15 mA 3

CAD (KiCad official)

  • Symbol: NSS40301MDR2G
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: nss40301mdr2g-etched.step / nss40301mdr2g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nss40301mdr2g.step / nss40301mdr2g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 3539b8f545a7f7e7, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF